Untitled
Abstract: No abstract text available
Text: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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MD56V62800A
152-Word
MD56V62800A
cycles/64
b724B40
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
216-w
V16100
cycles/64m
7242MQ
GD173Ã
MSM51V16100
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sm 0038 tsop
Abstract: sm 0038 sm 0038 PIN DIAGRAM D2720
Text: O K I S em ic o n d u c to r M SC23T/D 2720A -X X BS9 2,097,152-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SOJ
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MSC23T/D2720A-XXBS9
152-Word
72-Bit
MSC23T/D2720A-xxBS9
16-Mb
168-pin
72-bit
sm 0038 tsop
sm 0038
sm 0038 PIN DIAGRAM
D2720
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cq 0765
Abstract: CQ 419 MARKING E2B KGF1638 0765 cq Ta 7210 p
Text: O K I Semiconductor KGF1638 Plastic GaAs Power FET for GSM and TDMA Applications D E S C R IP T IO N The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is
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KGF1638_
KGF1638
OT-89
33dBm)
b724B40
KGF1638
242M0
cq 0765
CQ 419
MARKING E2B
0765 cq
Ta 7210 p
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.
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MSM51V17100
216-Word
51V17100
216-w
S4H40
2424D
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5205 ADPCM SPEEC H SYNTHESIS LSI TO CUSTOM ERS FOR NEW CIRCUIT DESIGN converter and includes a -40dB /oct low -pass filter. The sam pling frequency can also be selected u p to 32kHz. Therefore, theMSM6585 can realize a high quality voice.
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MSM5205
-40dB
32kHz.
theMSM6585
MSM6585
MSM5205
10-bit
12-bit
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511000
Abstract: 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80
Text: SflE D O K I O K I • b 7 2 4 2 4 0 0 0 1 2 7 5 5 TST « O K I J S E M I C O N D U C T O R GROUP s e m i c o n d u c t o r " T - % - z . 2> - is - M S M 5 1 1 0 0 0 A 1,048,576-WQRD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 5110OOA is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The
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b724240
MSM511000A_
576-WORD
MSM5110OOA
MSM511000A
2424G
00157b5
--MSM511000AÂ
QD127L
511000
511000A
511000A-70
20-PIN
26-PIN
MSM511000A-70
MSM OKI
511000a-80
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V4170/SL 262,144-Word x 16-Bit D YN A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V4170/SL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM51V4170/SL is OKI's CMOS silicon gate process
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1V4170/SL
144-Word
16-Bit
MSM51V4170/SL
cycles/16ms,
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IC 741
Abstract: photo sensor pin diagram PHOTO SENSORS PHOTO TRANSISTOR phototransistor t36
Text: OKI electronic T36_ components Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package.
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b7242
242M0
L724240
b72HBM0
IC 741
photo sensor pin diagram
PHOTO SENSORS
PHOTO TRANSISTOR
phototransistor t36
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Funai
Abstract: MSM65512 MSM65P512 DIP40-P-600 OKI DIP-40P GG13 addressing mode in core i7
Text: SflE D • b?24240 0013Ô41 232 M O K I J O K I semiconductor— 0 k i s e m i c o n d u c t o r c r o u p MSM65512/65P512 _ -r-H9-i9-q>* OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION MSM65512 is a high-performance 8-bit single-chip controller that employs Oki's original nX-8/50
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MSM65512/65P512
W9-19-
MSM65512
nX-8/50
10MHz
MSM65P512,
MSM6SS12/65PS12
24EM0
Q013flb2
Funai
MSM65P512
DIP40-P-600 OKI
DIP-40P
GG13
addressing mode in core i7
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE M ODE TYPE DESCRIPTION The M SM 5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 5117100 is OKI's CM OS silicon gate process technology.
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MSM5117100
216-Word
cycles/32m
b72424
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BL-70
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14102 B/BL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUM N MODE TYPE DESCRIPTION The MSM514102B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102B/BL is OKI's CMOS silicon gate process technology.
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304-Word
MSM514102B/BL
cycles/128ms
102B/BL
A0-A10
b72424Q
001604b
BL-70
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The
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MSM51C464A
536-Word
MSM51C464A
b72M240
00177Mb
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MSM514800
Abstract: No abstract text available
Text: O K I Semiconductor MSM514800/L 524,288-Word x 8-Bit D Y N A M IC RAM: FAST PAGE M O D E TYPE DESCRIPTION The MSM514800/L is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800/ L is OKI's CMOS silicon gate process technology.
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MSM514800/L
288-Word
MSM514800/L
288-word
MSM514800/
1024cycles/16ms,
1024cycles/128ms
b724B40
MSM514800
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.
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MSIW5110OOB/BL_
576-Word
MSM511000B/BL
cycles/64ms
b72424G
00177b2
MSM511000B/BL
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oki m6650
Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
Text: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the
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MSM6650
MSM6650,
MSM6376
12-bit
MSM6650
00MHz,
AR76-202
b724240
M6650
MSM27C101
oki m6650
m6650
oki msm6376
zd 3.1v
CD T3 32 F11 HEM
BTU 10/400
AR76
QFP64-P-1420-V1K
PRBC
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