Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    B62 TRANSISTOR Search Results

    B62 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B62 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor J310

    Abstract: B62 transistor j310 equivalent J310 SMPJ310 gpg16
    Text: Databook.fxp 1/13/99 2:09 PM Page B-62 B-62 01/99 J310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    226AA SMPJ310 Transistor J310 B62 transistor j310 equivalent J310 SMPJ310 gpg16 PDF

    BSZ520N15NS3

    Abstract: marking 6B s4si 6B104 I6025 marking a6b
    Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#


    Original
    BSZ520N15NS3 marking 6B s4si 6B104 I6025 marking a6b PDF

    diode s6 6d

    Abstract: MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode IPP023N04N marking a6b
    Text: IPP023N04N G Ie]R IPB023N04N G "%&$!"# 3 Power-Transistor Product Summary Features Q & ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R  , @? >2 H *&+ Z"


    Original
    IPP023N04N IPB023N04N diode s6 6d MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode marking a6b PDF

    2n5485 equivalent transistor

    Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
    Text: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation


    Original
    2N4416, 2N4416A 2N4416 O-226AB O-92/18) 2n5485 equivalent transistor transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416 PDF

    2N3904 A30

    Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
    Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original
    PDF

    E39-R1S

    Abstract: E3Z-B81 E3Z-B82 E3Z-B86 b87 transistor E39-R1K E3Z-B61 oci 402
    Text: PET Bottle and Clear Material Photoelectric Sensor E3Z-B Sensor with Built-In Amplifier Reliably Detects Transparent PET Bottles and Clear Materials • ■ ■ ■ ■ ■ ■ Utilizes OMRON’S unique optical system “Inner View” to detect various shapes of


    Original
    500-ml 1-800-55-OMRON E39-R1S E3Z-B81 E3Z-B82 E3Z-B86 b87 transistor E39-R1K E3Z-B61 oci 402 PDF

    37104-3122-000FL

    Abstract: E3Z-B61 E39-R1S E3Z-B86 E3Z-B81 E3Z-B82 E3Z-B61-ECON
    Text: Photoelectric Sensor with Built-in Amplifier for Detecting Clear, Plastic Bottles E3Z-B Reliable Detection of Transparent Objects, Including Thin-walled Clear, Plastic Bottles • Uses OMRON's unique optical system "Inner View" that can detect various shapes of clear, plastic bottles.


    Original
    500-ml AWG24) 37104-3122-000FL 37104-3122-000FL E3Z-B61 E39-R1S E3Z-B86 E3Z-B81 E3Z-B82 E3Z-B61-ECON PDF

    Untitled

    Abstract: No abstract text available
    Text: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit


    OCR Scan
    BC818S Ta-25Â 100uA 100mA 500mA 300mA 50MHZ 300uSJ PDF

    SQD65BB75

    Abstract: sqd65B
    Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.


    OCR Scan
    SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B PDF

    t03 package transistor pin configuration

    Abstract: t03 package transistor pin dimensions DDG332 LAS-8100 LAS-8101 2n 0401 transistor t03 switching transistor
    Text: D SEMTECH • 00Q332Ô 5T3 « S E T CORP LAS-8100 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS ABSOLUTE MAXIMUM RATINGS SYM BOL M A X IM U M Supply Voltage V cc 26 Volts Logic Input Voltage V |N Vcc Volts PA R A M E T E R Output Current Source peak; Source (continuous;


    OCR Scan
    DDG332Ã LAS-8100 100mV 00D3333 8100P t03 package transistor pin configuration t03 package transistor pin dimensions DDG332 LAS-8100 LAS-8101 2n 0401 transistor t03 switching transistor PDF

    b101 transistor

    Abstract: ff 0401 transistor Transistor AH 147
    Text: D SEMTECH • 00Q332Ô 5T3 « S E T CORP LAS-8100 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS ABSOLUTE MAXIMUM RATINGS SYM BO L M A XIM U M S u p p ly V oltage V cc 26 V olts L o g ic Input V oltage V |N Vcc V olts PARAM ETER O u tpu t C u rre n t Am ps ^0 3 S o u rce peak;


    OCR Scan
    00Q332Ô LAS-8100 8100P b101 transistor ff 0401 transistor Transistor AH 147 PDF

    Untitled

    Abstract: No abstract text available
    Text: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    OCR Scan
    IRGBC40K application002Gb43 TQ-220AB C-854 4A55455 G020b44 PDF

    bo434

    Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
    Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages


    OCR Scan
    00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202 PDF

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


    OCR Scan
    23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439 PDF

    bd437 siemens

    Abstract: transistor d437 D437 transistor bd 439
    Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase


    OCR Scan
    QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439 PDF

    TFM 1380 T

    Abstract: No abstract text available
    Text: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?


    OCR Scan
    E82988 1995-9Cl95t/R89) TFM 1380 T PDF

    SN7483N

    Abstract: mm74coon w1A 74 SN7482N SN7483 MM74C MM74C00N MM74C02N MM74C04N MM74C08N
    Text: National Sem iconductor Sem iconductors Integrated Circuits - Digital C M O S MM74C Series C M O S F u nctionally e q uivalen t to Sta n d a rd 74 S e rie s Pin com p atib le w ith Sta n d a rd 74 Se rie s. D issip a tio n ty p ic a lly 10 n an ow atts per gate


    OCR Scan
    MM74C SN7482N SN7483N SN7485N SN7486N SN74SMN SN74S4N 16-bit SN7488N/AN 256-bit SN7483N mm74coon w1A 74 SN7482N SN7483 MM74C00N MM74C02N MM74C04N MM74C08N PDF

    TRANSISTOR N 1380 600 300 SC

    Abstract: M109 S30S3 T151 S-30S transistor 009
    Text: 1 D I 3 O O M - O 5 O 300a • Outline Drawings POWER TRANSISTOR MODULE • t t * '• F e a tu re s • High DC Current Gain ti — Hi gh speed switching Including Free Wheeling Diode .Insulated Type ■ E 3i£ : A p p lic a tio n s • js M h 'T i'i "/?■>?


    OCR Scan
    S30S3% I95t/R89) Shl50 TRANSISTOR N 1380 600 300 SC M109 S30S3 T151 S-30S transistor 009 PDF

    transistor 009

    Abstract: diode B61 transistor bf 760 S535 M109 T810 T930
    Text: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 7*4 "/•?■>?


    OCR Scan
    11S19 l95t/R89 transistor 009 diode B61 transistor bf 760 S535 M109 T810 T930 PDF

    Untitled

    Abstract: No abstract text available
    Text: là PER/COM PI74ALVCH16344 11111 111 11111 11111 1111111111111 111 111 11 111 111111111111111111 11111 11111 11111111111111111111 1111111111 111111 11111111 1-Bit to 4-Bit Address/Driver with 3-State Outputs Product Features Product Description • PI74ALVCH16344 is designed for low voltage operation


    OCR Scan
    PI74ALVCH16344 56-pin PI74ALVCH16344 PI74ALVCH PS8166A PDF

    sn7441an

    Abstract: SN7442N SN7442 MM74C00N SN7444N MM74C02N TTL sn7442n MM74C10N sn7441 MM74C
    Text: National Sem iconductor Sem iconductors Integrated Circuits - Digital C M O S MM74C Series C M O S F u nctionally e q uivalen t to Sta n d a rd 74 S e rie s Pin com p atib le w ith Sta n d a rd 74 Se rie s. D issip a tio n ty p ic a lly 10 n an ow atts per gate


    OCR Scan
    MM74C 33255H MM74C193N 33256F MM74C195N 33257D MM74C200N 256-BIT 33258B SN7440N sn7441an SN7442N SN7442 MM74C00N SN7444N MM74C02N TTL sn7442n MM74C10N sn7441 PDF

    SN74118N

    Abstract: sn74118 MM74C107N Hex Set-Reset Latch mm74C192n sn74123n MM74C163N MM74C174N SN74C123N MM74C
    Text: National Sem iconductor Sem iconductors Integrated Circuits - Digital C M O S MM74C Series C M O S F u nctionally e q uivalen t to Sta n d a rd 74 S e rie s Pin com p atib le w ith Sta n d a rd 74 Se rie s. D issip a tio n ty p ic a lly 10 n an ow atts per gate


    OCR Scan
    MM74C 33255H MM74C193N 33256F MM74C195N 33257D MM74C200N 256-BIT 33258B SN74S114N SN74118N sn74118 MM74C107N Hex Set-Reset Latch mm74C192n sn74123n MM74C163N MM74C174N SN74C123N PDF

    8 bit Parallel-Out Shift Register

    Abstract: SN74C164N SN74165N MM74C107N SN74164N MM74C MM74C00N MM74C02N MM74C04N MM74C08N
    Text: National Sem iconductor Sem iconductors Integrated Circuits - Digital C M O S MM74C Series C M O S F u nctionally e q uivalen t to Sta n d a rd 74 S e rie s Pin com p atib le w ith Sta n d a rd 74 Se rie s. D issip a tio n ty p ic a lly 10 n an ow atts per gate


    OCR Scan
    MM74C SN74164N SN74C164N SN74167N SN74C167N SN74165N SN74L165N/SN74C165N SN74170N SN74S170N SN74166N 8 bit Parallel-Out Shift Register SN74165N MM74C107N MM74C00N MM74C02N MM74C04N MM74C08N PDF

    SN7490N

    Abstract: SN7492N SN7493N SN74L90N SN7489N SN74L89AN MM74C107N BL14 MM74C163N MM74C
    Text: National Sem iconductor Sem iconductors Integrated Circuits - Digital C M O S MM74C S e rie s C M O S F u nctionally e q uivalen t to Sta n d a rd 74 S e rie s Pin com p atib le w ith Sta n d a rd 74 Se rie s. D issip a tio n ty p ic a lly 10 n an ow atts per gate


    OCR Scan
    MM74C A4C200N 256-BIT 33258B SN7489N SN74L89 64-bit SN7492N SN7490N SN74L90N SN7492N SN7493N SN7489N SN74L89AN MM74C107N BL14 MM74C163N PDF