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Text: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit
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BC818S
Ta-25Â
100uA
100mA
500mA
300mA
50MHZ
300uSJ
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Untitled
Abstract: No abstract text available
Text: P 2SC1384 SEMICONDUCTOR BDKWAKD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR L O W F R E Q U E N C Y A M P L IF IE R P O W E R D R IV E R * Complement to 2SA684 * Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS at Tamb=25#C
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2SC1384
2SA684
300uSJhity
100uA
500mA
500mA
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Untitled
Abstract: No abstract text available
Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA HP122 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Package: TO-220 * Complement to TIP 127 ABSOLUTE MAXIMUM RATINGS at T«ml^25°C C haracteiistk Symbol Rating Uitit
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HP122
O-220
300uSJDuty
100mA
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Untitled
Abstract: No abstract text available
Text: •€> | 2SC1213 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA L O W F R E Q U E N C Y A M P L IF IE R * Complement to 2SA673 • Collector-Base Voltage VCBCM50V ABSOLUTE MAXIMUM RATINGS a t Tan*=25*C
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2SC1213
2SA673
VCBCM50V
300uSJhity
100uA
500mA
500mA
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Untitled
Abstract: No abstract text available
Text: | e FORWARD INTERNATIONAL ELECTRONICS L ID . HP120 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR M E D IU M P O W E R L IN E A R S W IT C H IN G A PPL IC A T IO N Package: TO-220 * Complement toTIP125 ABSOLUTE MAXIMUM RATINGS a t Tairh=25°C
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HP120
O-220
toTIP125
300uSJ3uty
10QmA
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