2N7224 JANTXV
Abstract: 3000CL 2N7224 IRFM150
Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM150
MIL-S-19500/595]
IRFM150D
IRFM150U
O-254
MIL-S-19500
S5M52
2N7224 JANTXV
3000CL
2N7224
IRFM150
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IG8T
Abstract: DIODE 65A IRGKI065F06 82FL
Text: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses
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IRGKI065F06
10KHz
50KHz
100nH
C-170
IG8T
DIODE 65A
IRGKI065F06
82FL
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Untitled
Abstract: No abstract text available
Text: 4Ô55452 International i ü Rectifier D G157Gb 30Ô • IN R PD-9.654A IRFR9014 IRFU9014 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9014 Straight Lead (IRFU9014) Available in Tape & Reel
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G157Gb
IRFR9014
IRFU9014
IRFR9014)
IRFU9014)
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21dq
Abstract: No abstract text available
Text: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics
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0D05041
11DQ03
11DQ05
21DQ03
31DQ03
31DQ05
11DQ04
11DQ06
21DQ04
31DQ04
21dq
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RF830
Abstract: No abstract text available
Text: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V
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D01476B
IRF830
RF830
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Untitled
Abstract: No abstract text available
Text: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC640
4U55452
DD14SST
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548B
Abstract: IRF9230 JANTX2N6806 JANTXV2N6806 080II
Text: I p| ^ 0 fp Q t ÌO n Q I Provisional Data Sheet No. PD-9.548B I G R Rectifier JANTX2N6806 HEXFET POWER MOSFET JANTXV2N6806 [REF.-MIL-PRF-19500/562] [GENERIC :IRF9230] P -C H A N N E L -200 Volt, 0.80Î2 HEXFET HEXFET technology is the key to International
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jantx2N6806
JANTXV2N6806
-MIL-PRF-19500/562]
IRF9230]
00E5Efib
548B
IRF9230
JANTXV2N6806
080II
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Untitled
Abstract: No abstract text available
Text: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )
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HF40A060ACB
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Untitled
Abstract: No abstract text available
Text: PD-2.447 International SRectifier HFA140NH60 Ultrafast, Soft Recovfery Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? T V f = 1.6V Q rr* = 1 4 0 0 n C
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HFA140NH60
00A/fJS
Liguria49
3150utram
4A55455
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MfiSSMSE GQ170öb Q&l PD-2.315 International I° r]Rectifier 6CWQ09F 6CWQ1 OF SCHOTTKY RECTIFIER 6.6 Amp Major Ratings and Characteristics Description/Features Characteristics 6CWQ.F Units ' f AV R « * “"9ular waveform
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GQ170Ã
6CWQ09F
-40to125
4A55455
DD17Dfl^
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International Rectifier 16f series
Abstract: No abstract text available
Text: Bulletin 120204 International S Rectifier 16F R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 16 A High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM
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0100s
4A55452
International Rectifier 16f series
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smd 42t
Abstract: No abstract text available
Text: PD-9.1003 International k R ectifier IRF614S HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V
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IRF614S
SMD-220
465S4S2
DD21451
smd 42t
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Untitled
Abstract: No abstract text available
Text: 4Ô5S45S □ 0 1 4 0 5 4 International IksrI Rectifier GSM • INR PD-9.421C IRF9540 INTERNATIONAL R E C T I F I E R HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling
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5S45S
IRF9540
-100V
O-220
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PG44
Abstract: No abstract text available
Text: 73 INTERNATIONAL RECTIFIER IO R d T | 4fl55455 ODDbTMl O Data Sheet No. PD-3.142 in t e r n a t io n a l , r e c t i f i e r S23DF & S23DFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 fjs 270 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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4fl55455
S23DF
S23DFH
S23DF
S23DFH
TD-209AB
S23DGF4A0.
4fl554S2
PG44
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Untitled
Abstract: No abstract text available
Text: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC40K
application002Gb43
TQ-220AB
C-854
4A55455
G020b44
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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Untitled
Abstract: No abstract text available
Text: j p j -0 p p Q I j Q p| Q I Provisional Data Sheet No. PD-9.430B I O R Rectifier JANTX2N6796 HEXFET POWER MOSFET JANTXV2N6796 [REF:MIL-PRF-19500/557] [GENERIC:IRFF130] N -C H A N N E L 100 Volt, 0.180 HEXFET Product Summary1 H E X F E T techn o lo g y is th e key to Intern ation al
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JANTX2N6796
JANTXV2N6796
MIL-PRF-19500/557]
IRFF130]
4A55455
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irfip254
Abstract: No abstract text available
Text: International " [i ^rI Rectifier HEXFET« Power MOSFET 0015322 ‘,27 •INR PD9747 IRFIP254 INTERNATIONAL RECTIFIER • Isolated Package • DC Package Isolations 4.0KVDC • AC Package lsolation= 2.0KVRMS © • Lead to Lead Creepage Dist.= 7.5mm • Sink to Lead Creepage Dist.= 6.0mm
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IRFIP254
55M52
Q153E7
irfip254
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553B
Abstract: IRFF9220 JANTX2N6847 JANTXV2N6847 diode ior 0014
Text: |0 p pj p| I IOR Rectifier I pj Provisional Data Sheet No. PD-9.553B I" I q JANTX2N6847 HEXFET POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC :IRFF9220] P -C H A N N E L -200 Volt, 1.5Q HEXFET Product Summanf HEXFET technology is the key to International
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JANTX2N6847
JANTXV2N6847
MIL-PRF-19500/563]
IRFF9220]
553B
IRFF9220
JANTX2N6847
JANTXV2N6847
diode ior 0014
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2025 ct
Abstract: n5204 T30 rectifier 2N5204 2N681 T120 16A CK801 2N6204 2N682 LT 5226
Text: international SS rectifier '4855452 INTERNATIONAL RECTIF IE R ]M f|4 ÔS54S2 00047^5 4 550 04795 Data Sheet No. PD-3.081A 1 INTERNATIONAL RECTIFIER r ~ /s-' IÖR SN681 & SN5S04 SERIES 25 and 3 5 Amp RMS SCRs Major Ratings and Characteristics 2N681-92 2N5204-Q7
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QDD47c
SN681
SN5S04
2N681-92
2N5204-07
2N5204
2025 ct
n5204
T30 rectifier
2N681
T120 16A
CK801
2N6204
2N682
LT 5226
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international rectifier p
Abstract: n5204
Text: international rectifier î“ — i — - -— — 48 55452 SS - - - INTERNATIONAL ÏMf|4a554S2 00047=15 4 - R EC flFlER 55C 04795 D Data Sheet No. PD-3.081A
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4a554S2
SN681
2N5204
2N681-92
2N5204-07
2N681
international rectifier p
n5204
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IIQ R Iin t e r n a t io n a l DE DE | 4ÔSS4SE D0D7711 T | ~ f'- - fj Data Sheet No. PD-3.133 r e c t if ie r S34D & S34DH SERIES 400-200 VOLTS RANGE 550 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs e VOLTAGE RATINGS
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D0D7711
S34DH
TD-209AE
O-118)
-209AD
4A55455
QQ0771S
T-25-19
209AE
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