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    AEM Components F0603SB6000V032TM

    SOLIDMATRIX FUSE,32VDC, 6.0A
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    DigiKey F0603SB6000V032TM Cut Tape 3,985 1
    • 1 $0.95
    • 10 $0.727
    • 100 $0.5564
    • 1000 $0.42521
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    F0603SB6000V032TM Digi-Reel 3,985 1
    • 1 $0.95
    • 10 $0.727
    • 100 $0.5564
    • 1000 $0.42521
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    Wurth Elektronik 15406094B6000

    WL-SICW SMT INFRARED CHIPLED WAT
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    DigiKey 15406094B6000 Digi-Reel 2,758 1
    • 1 $0.33
    • 10 $0.305
    • 100 $0.2835
    • 1000 $0.2421
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    15406094B6000 Cut Tape 2,758 1
    • 1 $0.33
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    Mouser Electronics 15406094B6000 5,449
    • 1 $0.37
    • 10 $0.339
    • 100 $0.315
    • 1000 $0.269
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    Wurth Elektronik 15406085B6000

    WL-SICW SMT INFRARED CHIPLED WAT
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    DigiKey 15406085B6000 Digi-Reel 2,680 1
    • 1 $0.57
    • 10 $0.52
    • 100 $0.4842
    • 1000 $0.4104
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    15406085B6000 Cut Tape 2,680 1
    • 1 $0.57
    • 10 $0.52
    • 100 $0.4842
    • 1000 $0.4104
    • 10000 $0.4104
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    Mouser Electronics 15406085B6000 5,858
    • 1 $0.63
    • 10 $0.578
    • 100 $0.538
    • 1000 $0.456
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    AEM Components F1206SB6000V024TM

    SOLIDMATRIX FUSE, 24VDC, 6.0A
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    DigiKey F1206SB6000V024TM Cut Tape 2,500 1
    • 1 $1.12
    • 10 $0.855
    • 100 $0.6542
    • 1000 $0.49986
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    Bel Fuse 0ABB-6000-TM

    FUSE BOARD MOUNT 6A 32VDC 0603
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    DigiKey 0ABB-6000-TM Digi-Reel 1,114 1
    • 1 $0.94
    • 10 $0.718
    • 100 $0.5498
    • 1000 $0.42018
    • 10000 $0.34722
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    0ABB-6000-TM Cut Tape 1,114 1
    • 1 $0.94
    • 10 $0.718
    • 100 $0.5498
    • 1000 $0.42018
    • 10000 $0.34722
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    Newark 0ABB-6000-TM Cut Tape 4,962 1
    • 1 $0.562
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    IBS Electronics 0ABB-6000-TM 10,000
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    B6000 Datasheets (1)

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    ECAD Model
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    Datasheet Type
    PDF
    B6000.0070 Littelfuse Protection Relays & Systems, Industrial Controls, Meters, BASIC UNIT Original PDF

    B6000 Datasheets Context Search

    Catalog Datasheet
    Type
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    PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    TAG 8926

    Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
    Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


    Original     		MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733 PDF

    Genlock

    Abstract: GS4910B 1kv hd CLOCK GENERATOR 10HZ GS4911B/GS4910B 244M 267M GS4911B smpte 274m VG901101A
    Text: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK Key Features Description Video Clock Synthesis • • • • • • Generates any video or graphics clock up to 165MHz Pre-programmed for 8 video and 13 graphics clocks Accuracy of free-running clock frequency limited only by


    Original     		GS4911B/GS4910B 165MHz GS4911B 96kHz Genlock GS4910B 1kv hd CLOCK GENERATOR 10HZ 244M 267M smpte 274m VG901101A PDF

    GS4901B

    Abstract: 244M 267M GS4900B smpte 274m
    Text: GS4901B/GS4900B SD Clock and Timing Generator with GENLOCK GS4901B/GS4900B Data Sheet Key Features Video Clock Synthesis • • • • • Pre-programmed for 4 video clock periods 14.32 MHz, 27 MHz, 36 MHz, and 54 MHz Accuracy of free-running clock frequency limited only by


    Original     		GS4901B/GS4900B GS4901B/GS4900B GS4901B 96kHz 244M 267M GS4900B smpte 274m PDF

    MBM29BS64LF

    Abstract: MBM29BS64LF-18 MBM29BT64LF-18
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


    Original     		DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18 PDF

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh PDF

    A81DC

    Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
    Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF


    OCR Scan     		ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040 PDF

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80 PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


    Original     		DS05-20913-2E MBM29BS/BT32LF 60-ball MBM29BS/ BT32LF-25 MBM29BT32LF-18 MBM29BS32LF-18 F0401 PDF

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 PDF

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P PDF

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175 PDF

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0401 PDF

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original     		S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256 PDF

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA PDF

    Untitled

    Abstract: No abstract text available
    Text: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK GS4911B/GS4910B Data Sheet Key Features Description Video Clock Synthesis The GS4911B is a highly flexible, digitally controlled clock synthesis circuit and timing generator with genlock capability. It can be used to generate video and


    Original     		GS4911B/GS4910B 165MHz GS4911B PDF

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


    Original     		IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE PDF

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


    Original     		MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 PDF

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am29LV2562M 120R C8800 PDF

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141 PDF