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    B5313 Price and Stock

    Aearo Technologies B-531-3

    BUSHING 0.36" THERMOPLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B-531-3 Box 2,889 1
    • 1 $0.58
    • 10 $0.447
    • 100 $0.3667
    • 1000 $0.31503
    • 10000 $0.31503
    		Buy Now

    American Hakko Products Inc B5313

    KNOB,FH-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B5313 Bulk 1
    • 1 $6.87
    • 10 $6.87
    • 100 $6.87
    • 1000 $6.87
    • 10000 $6.87
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    Seiko Epson Corporation SG-8018CB 50.3133M-TJHPA0

    Standard Clock Oscillators SG-8018CB 50.3133M-TJHPA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CB 50.3133M-TJHPA0
    • 1 $1.1
    • 10 $0.976
    • 100 $0.806
    • 1000 $0.636
    • 10000 $0.6
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    Seiko Epson Corporation SG-8018CB 50.3133M-TJHSA0

    Standard Clock Oscillators SG-8018CB 50.3133M-TJHSA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C ST 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CB 50.3133M-TJHSA0
    • 1 $1.1
    • 10 $0.976
    • 100 $0.806
    • 1000 $0.636
    • 10000 $0.6
    		Get Quote

    SMC Corporation of America D-B53-137

    Autoswitch, reed, band mt, LED | SMC Corporation D-B53-137
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS D-B53-137 Bulk 5 Weeks 1
    • 1 $57.5
    • 10 $57.5
    • 100 $57.5
    • 1000 $57.5
    • 10000 $57.5
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    Find more B5313 price and stock on Findchips.com

    B5313 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    B-531-3 3M - Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - B-531-C1100 BUSHING Original PDF
    B-531-3 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - B-531-C1100 BUSHING 1=500PCS Original PDF

    B5313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D768

    Abstract: 2F67
    Text: 1 234567381 1 • • • • • • • • • • • • • • • • • 1 1 964A1B65C651DBDEF8B453A1E1BD375371  C37"B7$4D31E1&' *1451)+,1-1.&*1451+.,1(1


    Original     		PDF 964A1B65C651DBDEF8B 453A1 C15B1 15B54 1B65C651 6773D51 1B65C6581 3351B71 3451FDA6857 1854DA47A1 D768 2F67

    c5793

    Abstract: digital multimeter 509 finest CONDENSADORES 12 Key Numeric Keypad C5445 B558 c5197 equivalent D8PSK cpu aeroflex B5226
    Text: DIGITAL RF SIGNAL GENERATORS 3410 Series Operating Manual Document part no. 46892/499 DIGITAL RF SIGNAL GENERATORS 3410 Series 3412 3413 3414 3416 250 kHz–2.0 GHz 250 kHz–3.0 GHz 250 kHz–4.0 GHz 250 kHz–6.0 GHz This manual applies to instruments with software issues of 4.00 and higher.


    Original     		PDF to04455 c5793 digital multimeter 509 finest CONDENSADORES 12 Key Numeric Keypad C5445 B558 c5197 equivalent D8PSK cpu aeroflex B5226

    Untitled

    Abstract: No abstract text available
    Text: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in


    OCR Scan     		PDF PBYR1635 PBYR1640 PBYR1645 b5313 PRYR1fi45 bbS3T31 T-03-17 M3192

    buz72a

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF b53131 BUZ72A BUZ72A_ T-39-11 0D14443

    10J 6KV

    Abstract: OSM9510-12 T-23
    Text: OSM951Q-12 MAINTENANCE TYPE N AMER P H I L I P S / D I S C R E T E 2SE D Q t>b53131 O O E E T I B 1 7z-23 - ¿ > s r HIGH-VOLTAGE RECTIFIER STACK The OSM9510-12 is a Silicon re c tifie r stack for high voltage applications up to 12kV in half-w ave circ u its, o r up to 6kV as one of the arm s of a


    OCR Scan     		PDF OSM9510-12 OSM9510-12 OSM951Q-12 QD22T14 bLi53 10J 6KV T-23

    buz349

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349

    BUS133

    Abstract: BUS133A BUS133H TO3 philips
    Text: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S


    OCR Scan     		PDF BUS133 BUS133H T-33-15 7Z2I43S BUS133A TO3 philips

    bs107 transistor

    Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
    Text: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching


    OCR Scan     		PDF BS107 MBB073 UCB700 bs107 transistor cr 406 transistor BS107 UCB700 transistor 406 specification

    4312 020 36640

    Abstract: BY206 BLX39 bv-300 carbon resistors
    Text: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX39 110-j62 7Z77862 4312 020 36640 BY206 BLX39 bv-300 carbon resistors

    BUZ384

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


    OCR Scan     		PDF BUZ384 T0218AA; BUZ384 T-39-13

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		PDF Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		PDF bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98

    M3105

    Abstract: BY359F IEC134 M2296 M3103
    Text: I I N AMER P H I L I P S / D I S C R E T E 2SE D ^53=131 0G52351 7 • MAINTENANCE TYPE BY359F—1500 l^ O Z -1 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery


    OCR Scan     		PDF bb53131 0G52351 BY359Fâ BY359h bbS3T31 T-03-17 M3105 BY359F IEC134 M2296 M3103

    15S2

    Abstract: BY229F IEC134 M2296 D8663
    Text: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse


    OCR Scan     		PDF 0GSS30S BY229F T-03-17 BY229Fâ tLS3T31 D8382 53T31 D0E531b 15S2 IEC134 M2296 D8663

    u706

    Abstract: BU706 BU706D
    Text: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The


    OCR Scan     		PDF D0262T4 BU706 BU706D BU706D BU706D) u706

    diode 0317

    Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1
    Text: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r


    OCR Scan     		PDF BYQ28 T-03-17 m3066 diode 0317 diode sv 03 7n ALPS 102 diode BYq28 diode sv 0317 saia double diode parallel C117 diode M1

    sot199

    Abstract: BDV64F lem HA BDV64AF BDV64BF BDV64CF BDV65F USB012 BDV64 B0V64B
    Text: Philips Com ponents BDV64F/64AF/64BF/64CF PNP Silicon Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDV64F/64AF/64BF/64CF BDV65F/ 65AF/65BF/65CF. OT199 BDV64F BDV64AF BDV64BF BDV64CF sot199 lem HA BDV65F USB012 BDV64 B0V64B

    BFR90A

    Abstract: transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209
    Text: Philips Semiconductors bbSB^Bl GD31Ö03 773 APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AMER PHILIPS/DISCRETE FEATURES b'iE D PINNING • Low noise • Low intermodulation distortion PIN DESCRIPTION 3 Code: BFR90A/02 • High power gain


    OCR Scan     		PDF BFR90A ON4184) BFQ51. BFR90A transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209