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Aearo Technologies B-531-3 BUSHING 0.36" THERMOPLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B-531-3	Box	2,849		1	1 $0.58 10 $0.447 100 $0.3667 1000 $0.31503 10000 $0.31503	Buy Now
American Hakko Products Inc B5313 KNOB,FH-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B5313	Bulk			1	1 $6.87 10 $6.87 100 $6.87 1000 $6.87 10000 $6.87	Buy Now
Seiko Epson Corporation SG-8018CB 50.3133M-TJHSA0 Standard Clock Oscillators SG-8018CB 50.3133M-TJHSA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C ST 1K TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SG-8018CB 50.3133M-TJHSA0					1 $1.1 10 $0.976 100 $0.806 1000 $0.636 10000 $0.6	Get Quote
Seiko Epson Corporation SG-8018CB 50.3133M-TJHPA0 Standard Clock Oscillators SG-8018CB 50.3133M-TJHPA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C O/E 1K TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SG-8018CB 50.3133M-TJHPA0					1 $1.1 10 $0.976 100 $0.806 1000 $0.636 10000 $0.591	Get Quote
SMC Corporation of America D-B53-137 Autoswitch, reed, band mt, LED \| SMC Corporation D-B53-137
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	D-B53-137	Bulk		5 Weeks	1	1 $57.5 10 $57.5 100 $57.5 1000 $57.5 10000 $57.5	Get Quote

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B5313 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
B-531-3		3M - Aearo Technologies	Hardware, Fasteners, Accessories - Screw Grommets - B-531-C1100 BUSHING		Original	PDF
B-531-3		Aearo Technologies	Hardware, Fasteners, Accessories - Screw Grommets - B-531-C1100 BUSHING 1=500PCS		Original	PDF

B5313 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D768 Abstract: 2F67 Text: 1 234567381 1 • • • • • • • • • • • • • • • • • 1 1 964A1B65C651DBDEF8B453A1E1BD375371 C37"B7$4D31E1&' 1451)+,1-1.&1451+.,1(1	Original	964A1B65C651DBDEF8B 453A1 C15B1 15B54 1B65C651 6773D51 1B65C6581 3351B71 3451FDA6857 1854DA47A1 D768 2F67	PDF
c5793 Abstract: digital multimeter 509 finest CONDENSADORES 12 Key Numeric Keypad C5445 B558 c5197 equivalent D8PSK cpu aeroflex B5226 Text: DIGITAL RF SIGNAL GENERATORS 3410 Series Operating Manual Document part no. 46892/499 DIGITAL RF SIGNAL GENERATORS 3410 Series 3412 3413 3414 3416 250 kHz–2.0 GHz 250 kHz–3.0 GHz 250 kHz–4.0 GHz 250 kHz–6.0 GHz This manual applies to instruments with software issues of 4.00 and higher.	Original	to04455 c5793 digital multimeter 509 finest CONDENSADORES 12 Key Numeric Keypad C5445 B558 c5197 equivalent D8PSK cpu aeroflex B5226	PDF
Untitled Abstract: No abstract text available Text: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in	OCR Scan	PBYR1635 PBYR1640 PBYR1645 b5313 PRYR1fi45 bbS3T31 T-03-17 M3192	PDF
buz72a Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	b53131 BUZ72A BUZ72A_ T-39-11 0D14443	PDF
10J 6KV Abstract: OSM9510-12 T-23 Text: OSM951Q-12 MAINTENANCE TYPE N AMER P H I L I P S / D I S C R E T E 2SE D Q t>b53131 O O E E T I B 1 7z-23 - ¿ > s r HIGH-VOLTAGE RECTIFIER STACK The OSM9510-12 is a Silicon re c tifie r stack for high voltage applications up to 12kV in half-w ave circ u its, o r up to 6kV as one of the arm s of a	OCR Scan	OSM9510-12 OSM9510-12 OSM951Q-12 QD22T14 bLi53 10J 6KV T-23	PDF
buz349 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349	PDF
BUS133 Abstract: BUS133A BUS133H TO3 philips Text: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S	OCR Scan	BUS133 BUS133H T-33-15 7Z2I43S BUS133A TO3 philips	PDF
bs107 transistor Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification Text: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching	OCR Scan	BS107 MBB073 UCB700 bs107 transistor cr 406 transistor BS107 UCB700 transistor 406 specification	PDF
4312 020 36640 Abstract: BY206 BLX39 bv-300 carbon resistors Text: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is	OCR Scan	BLX39 110-j62 7Z77862 4312 020 36640 BY206 BLX39 bv-300 carbon resistors	PDF
BUZ384 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET with fast-recovery reverse diode. This device is	OCR Scan	BUZ384 T0218AA; BUZ384 T-39-13	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable	OCR Scan	Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.	OCR Scan	bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98	PDF
M3105 Abstract: BY359F IEC134 M2296 M3103 Text: I I N AMER P H I L I P S / D I S C R E T E 2SE D ^53=131 0G52351 7 • MAINTENANCE TYPE BY359F—1500 l^ O Z -1 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery	OCR Scan	bb53131 0G52351 BY359Fâ BY359h bbS3T31 T-03-17 M3105 BY359F IEC134 M2296 M3103	PDF
15S2 Abstract: BY229F IEC134 M2296 D8663 Text: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse	OCR Scan	0GSS30S BY229F T-03-17 BY229Fâ tLS3T31 D8382 53T31 D0E531b 15S2 IEC134 M2296 D8663	PDF

u706 Abstract: BU706 BU706D Text: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The	OCR Scan	D0262T4 BU706 BU706D BU706D BU706D) u706	PDF
diode 0317 Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1 Text: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r	OCR Scan	BYQ28 T-03-17 m3066 diode 0317 diode sv 03 7n ALPS 102 diode BYq28 diode sv 0317 saia double diode parallel C117 diode M1	PDF
sot199 Abstract: BDV64F lem HA BDV64AF BDV64BF BDV64CF BDV65F USB012 BDV64 B0V64B Text: Philips Com ponents BDV64F/64AF/64BF/64CF PNP Silicon Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching applications.	OCR Scan	BDV64F/64AF/64BF/64CF BDV65F/ 65AF/65BF/65CF. OT199 BDV64F BDV64AF BDV64BF BDV64CF sot199 lem HA BDV65F USB012 BDV64 B0V64B	PDF
BFR90A Abstract: transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209 Text: Philips Semiconductors bbSB^Bl GD31Ö03 773 APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AMER PHILIPS/DISCRETE FEATURES b'iE D PINNING • Low noise • Low intermodulation distortion PIN DESCRIPTION 3 Code: BFR90A/02 • High power gain	OCR Scan	BFR90A ON4184) BFQ51. BFR90A transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209	PDF