BGY58
Abstract: 6-32UNC-2A IEC134 GP330
Text: N AMER PHI LIP S/ DI SC RE TE 2SE D • bli53T31 GOlAiTÌ 0 I BGY58 A HYBRID V.H.F. PUSH-PULL AMPLIFIER MODULE Hybrid amplifier module intended for CATV systems. QUICK R EFER EN C E D A T A Frequency range f 40 to 300 MH? Source impedance and load impedance
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BGY58
S11-22
BGY58
6-32UNC-2A
IEC134
GP330
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MAX2551
Abstract: ECG105 CC645
Text: PHILIPS E C G INC 17E bLi53ci2ô 0003at.l 7 T-77-05-05 E C G 1057 FM-IF AMPLIFIER, AF PRE-AMPLIFIER semiconductors QUICK REFERENCE DATA Units In mm Symbol Value Unit ’tot 19 mA Gy 73 dB v l lïm 43 dBvi V o^F) 75 m^rms AMR 45 dB P t-T a Î W £ \ *» V
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bLi53c
0003at
T-77-05-05
ECG1057
ECQ1057
0003fib3
VlO-14
MAX2551
ECG105
CC645
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Untitled
Abstract: No abstract text available
Text: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.
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RZ2731B45W
001SH3S
7Z24137
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BTW45-400R
Abstract: 2S44 mml 600 Philips LED 1979 600R 800R ML-100r
Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl DOllTSS b BTW45 SERIES T - ^ - iS T THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for power control applications. 1200R leS C° nSiStOS ° f reV6rSe P °,aritV WPes anode to stud identified by a suffix R: BTW45-400R to
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btw45
1200RieS
BTW45-400R
BTW45-400R
1000R
1200R
kb53131
10-Zl
2S44
mml 600
Philips LED 1979
600R
800R
ML-100r
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Untitled
Abstract: No abstract text available
Text: 2TE D NAPC/ SIGNETICS Signetics • bb S3 T24 005405=1 T ■ T-V9-V7-/V SCN68000 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION The SCN68000 is the first implementa tion of the S68000 1 6 /3 2 bit micropro cessor architecture. The SCN68000 has
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SCN68000
16-/32-Bit
SCN68000
S68000
16-bit
24-bit
32-bit
SCN68008
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10J 6KV
Abstract: H 723 OSM9510-12 rectifier stack
Text: OSM9510-12 M A IN T E N A N C E T Y P E N AMER PHILIPS/D ISC RE TE 2SE D Q bbSBTBl 0022=113 1 T -2Z -¿ ST HIGH-VOLTAGE RECTIFIER STACK The DSM9510-12 is a Silicon r e c tif ie r sta c k fo r h igh voltage ap p licatio n s) up to 12kV in h alf-w av e c ir c u its , o r up to 6kV a s one of th e a rm s of a
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OSM951CM2
OSM9510-12
OSM9510-12
23-oS'
10J 6KV
H 723
rectifier stack
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M3155
Abstract: M3160 pp m3155 g0s2710 m3166 BYV133F BYV133F-35 T-03-19
Text: DEVELOPMENT DATA BYV133F SERIES T h is data shee t con ta in s advance in fo rm a tio n and s p e cifica tio n s are su b je ct to c h an ge w ith o u t notice. N AMER PHILIPS/DISCRETE 25E D • ^53^31 0 0 2570“! 2 ■ . SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED T - Ô 3 - 1 9
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BYV133F
OT-186
bS3131
0DE2717
T-03-19
M3160
M3155
M3160
pp m3155
g0s2710
m3166
BYV133F-35
T-03-19
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TDA85610
Abstract: TDa8561 TDA8561Q
Text: NAPC/PHILIPS SEniCOND bflE D • 00^1777 Philips Semiconductors 07b ■ SIC3 Preliminary specification 2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier m n 1UAbi3b1 u FEATURES • Reverse polarity safe • Requires very few external components
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ECG933
Abstract: ECG932 ECG934
Text: PH ILIP S E C G INC 17E ECG Semiconductors — .875" 22,231MAX. r ,450"(ll.43 ^ L Absolute Maximum Ratings Symbol Rating Unit V Input Voltage ECG932 ECG933 ECG934 V| Internal Power Dissipation Pd 50 @ T c = 25°C W Ti T stg Oto 150 °c °c Storage Temperature Range
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ECG93X
ECG932
ECG933
ECG934
ECG932,
ECG933,
ECG934
bLi53c15ä
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ECG1342
Abstract: ECG289A ECG290A Philips ECG i733
Text: 17E PHILIPS E C G INC 0 • bbSBTEfl O D D S i m ECG1342 100 W AF, P ow er M o d u le S e m ic o n d u c to r s - 3.0 7l" 7 8ì - r -17 .3I5"(8> - 2.756"(70J - 1,733 (44 I 2 3 4 5 6 7 8 9 I O, .4 9 2 “ <12.5) ^ ^*1 I*-.I58"(4) T A b so lu te M a x im u m R a tin g s (T/\=26°C)
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-05-C
ECG1342
ECG290A
ECG289A
ECG1342
ECG289A
Philips ECG
i733
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