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    B48 MARKING CODE Search Results

    B48 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    B48 MARKING CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    intel flash date code marking

    Abstract: date code marking intel strataflash js28f320j3d75 PC28F320J3D75 28f320j3d JS28F320J3D-75 Intel StrataFlash Memory j3 28F320J3C 130nm RC28F320J3D-75
    Text: Product Change Notification 105488 - 00 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no


    Original     		ma3D75 RC28F320J3D75 TE28F320J3D75 100pc 144pc intel flash date code marking date code marking intel strataflash js28f320j3d75 PC28F320J3D75 28f320j3d JS28F320J3D-75 Intel StrataFlash Memory j3 28F320J3C 130nm RC28F320J3D-75 PDF

    m49470x01225kan

    Abstract: M49470X01125KBJ Kemet DATE CODE MARKING ON PACKING M49470Q01475KEJ EIA-469 M49470X01156KAN M49470X01336KAN M49470X01105KBN M49470Q01335KEN M49470X01156KAJ
    Text: F-3114C 1/08 KEMET is now on the QPL list for Switch Mode Power Supply SMPS Military Stacked Capacitors with MIL-PRF-49470 standard B Level reliability availability. These devices are intended for high reliability SMPS and pulse energy applications. Their low Equivalent Series Resistance (ESR) and


    Original     		F-3114C MIL-PRF-49470 15bis CH-1202 m49470x01225kan M49470X01125KBJ Kemet DATE CODE MARKING ON PACKING M49470Q01475KEJ EIA-469 M49470X01156KAN M49470X01336KAN M49470X01105KBN M49470Q01335KEN M49470X01156KAJ PDF

    PJ 0446

    Abstract: PJ 1429 LT 5239 H LT 5239 MARKING CODE b48 DALE PT 30-2 vishay sj 56 EB marking code T07 marking ST MARKING EV
    Text: IHSM-4825 Vishay Dale High Current, Surface Mount Inductor FEATURES • Flame retardant encapsulant UL 94V-0 • Completely encapsulated winding provides superior environmental protection and RoHS moisture resistance COMPLIANT • High current unit in surface mount package


    Original     		IHSM-4825 13-Oct-06 PJ 0446 PJ 1429 LT 5239 H LT 5239 MARKING CODE b48 DALE PT 30-2 vishay sj 56 EB marking code T07 marking ST MARKING EV PDF

    IRF 504

    Abstract: EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38
    Text: IHA Vishay Dale Filter Inductors High Current FEATURES • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IHA-205 IHA-301 IHA-302 IHA-303 IHA-304 IHA-305 IHA-501 IHA-502 IHA-503


    Original     		MIL-I-23053/5, IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IRF 504 EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38 PDF

    LT 5239

    Abstract: pt100 temperature 3 wire IHV15
    Text: IHD Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting axial leads • Protected by polyolefin tubing RoHS • High saturation bobbin used allowing high COMPLIANT inductance with low DC resistance • Pre-tinned leads • High resistivity core offers very high parallel resistance,


    Original     		13-Oct-06 LT 5239 pt100 temperature 3 wire IHV15 PDF

    PJ 1429

    Abstract: irf 3250 irf 0218 LT 5239 213/393 EZ 952 HLM01 NHLM NHL FLAT
    Text: HL, NHL FLAT and HLM, NHLM Vishay Dale Wirewound Resistors, Industrial Power, Flat HL , Miniature Flat (HLM) FEATURES • High temperature silicon coating • Mounting accommodations ideally suited to high density packaging • Self-stacking hardware for horizontal or vertical placement


    Original     		13-Oct-06 PJ 1429 irf 3250 irf 0218 LT 5239 213/393 EZ 952 HLM01 NHLM NHL FLAT PDF

    irf 940

    Abstract: IRF 870 marking B48 LT 5239 H irf 560 vishay sj 56 marking code EB 38 LT 5239 B48 MARKING CODE 1/irf 1420
    Text: IMS-5WD-40 Vishay Dale Inductors, Miniature, Shielded, Axial Leaded FEATURES • Miniature shielded inductor • High inductance-to-size ratio • Inductance range is 0.10 H to 56 000 μH • Encapsulated non-flammable shielded unit • 0.164" [4.17 mm] diameter by 0.450" [11.43 mm] long


    Original     		IMS-5WD-40 2002/95/EC 18-Jul-08 irf 940 IRF 870 marking B48 LT 5239 H irf 560 vishay sj 56 marking code EB 38 LT 5239 B48 MARKING CODE 1/irf 1420 PDF

    pj 0169

    Abstract: PJ 0459 irf 1740 IRF 0642 BV 202 0154 EZ 0302 BV 201 0143 marking B48 MARKING CODE tE5
    Text: IHB Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting • Wide range of inductance and current ratings RoHS • Pre-tinned leads ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with no DC current Dielectric: 2500 VRMS between winding and 0.250"


    Original     		13-Oct-06 pj 0169 PJ 0459 irf 1740 IRF 0642 BV 202 0154 EZ 0302 BV 201 0143 marking B48 MARKING CODE tE5 PDF

    SMD BA P09

    Abstract: smd code marking rj4 SMD F09 IRF 501 R12 BH SMD IHD-3 SMD BJ ET type ev 8200 - E st smd marking code et SMD marking CODE 2U
    Text: IHD Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting axial leads • Protected by polyolefin tubing RoHS • High saturation bobbin used allowing high COMPLIANT inductance with low DC resistance • Pre-tinned leads • High resistivity core offers very high parallel resistance,


    Original     		14-Mar-06 SMD BA P09 smd code marking rj4 SMD F09 IRF 501 R12 BH SMD IHD-3 SMD BJ ET type ev 8200 - E st smd marking code et SMD marking CODE 2U PDF

    panduit

    Abstract: No abstract text available
    Text: Terminals PANDUIT Termination Solutions Success Depends on the Crimp. A proper crimp is the key element of an overall wire termination assembly that unfortunately is all too often overlooked. Proper terminal selection, application and crimping are critical factors to


    Original     		SA-ELCB03 SA-NCCB34 panduit PDF

    D38999/26

    Abstract: D38999/49
    Text: MIL-DTL-38999 Series III Type Glenair ASAP Fiber Optic Cable Sets Plastic and Metal-Core Conduit Assembly D38999 Series III to D38999 Series III D38999 Series III ASAP fiber optic cable sets B Product Features  FEP High-Temperature Teflon , PEEK (Halogen Free, Lightweight) and Metal-Core


    Original     		MIL-DTL-38999 D38999 D38999 MIL-PRF-29504 D38999/26 D38999/49 PDF

    Device marking code B12 B13 B14 B15 B16

    Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
    Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		128Mb 144Mb HS032N02E HS032N02D HS032N02C HS032N02B HS032E02E HS032E02D HS032E02C HS032E02B Device marking code B12 B13 B14 B15 B16 MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B PDF

    marking code B49

    Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
    Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		256MB 288Mb HS256N08E HS256N08D HS256N08C HS256N08B HS256E08E HS256E08D HS256E08C marking code B49 MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking PDF

    357T

    Abstract: MARKING CODE b48 marking code VE marking B48 diode
    Text: MMBD4448W6 SURFACE MOUNT FAST SWITCHING DIODE ARRAY FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA


    Original     		MMBD4448W6 2002/95/EC OT23-6L, MIL-STD-750, 357T MARKING CODE b48 marking code VE marking B48 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms PDF

    MARKING CODE B82

    Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0


    Original     		MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms MARKING CODE B82 a87 marking Marking b66 marking a86 MARKING B83 marking a75 PDF

    a80 marking code

    Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a80 marking code MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84 PDF

    a74 marking code

    Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a74 marking code MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode PDF

    b41 Marking

    Abstract: No abstract text available
    Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms b41 Marking PDF

    A76 MARKING CODE

    Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
    Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms A76 MARKING CODE a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86 PDF

    transistor marking A21

    Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002


    Original     		MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms transistor marking A21 a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48 PDF

    HYR163249G-653

    Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
    Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


    Original     		HYR16xx49G 128MB 128MB, HYR163249G-653 HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON PDF

    Untitled

    Abstract: No abstract text available
    Text: MS16R1622 4/8 AF0-CK8 Preliminary Revision History Version 1.0 (July 2001) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Page 0 Rev.1.0 July 2001 MS16R1622(4/8)AF0-CK8 Preliminary (16Mx16)*2(/4/8)pcs Rambus RIMM based on 256Mb A-die, 32s banks,16K/32ns Ref, 2.5V


    Original     		MS16R1622 16Mx16) 256Mb 16K/32ns PDF

    A23 851 diode

    Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
    Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


    Original     		256/288Mb 256/288Mb 600MHz 711MHz 800MHz A23 851 diode diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745 PDF