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    MS18R3266AH0 Search Results

    MS18R3266AH0 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MS18R3266AH0-CT9 Samsung Electronics (32M x 18) * 6 pcs SO-RIMM Based on 576 MBit A-die, 32s Banks, 32k/32 ms Refresh, 2.5 V Original PDF

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    A74 marking

    Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
    Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		PDF MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms A74 marking a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38

    Untitled

    Abstract: No abstract text available
    Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		PDF MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms