Untitled
Abstract: No abstract text available
Text: NPN SILICON MICROWAVE TRANSISTOR FEATURES • H IG H G A IN B A N D W ID T H P R O D U C T : f r - 6 G H z NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT • L O W N O IS E F IG U R E : 2 .5 d B at 2 G H z X CD • H IG H G A IN : 13 d B at 2 G H z
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NE57800
NE57835
IS12I
J22li.
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2SC2150
Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use
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bM27M14
QQQE40b
NE57800
NE57807
NE57835
NE57800
NE578
2SC2150
NE57835
NE578 nec
2SC215
NE AND micro-X
transistor NEC ka 42
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2SC2150
Abstract: No abstract text available
Text: NPN SILICON MICROWAVE TRANSISTOR NE57800 NÉ57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz 20 • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 • RELIABILITY PROVEN IN SPACE:
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NE57800
NE578
lS22l
2SC2150
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Untitled
Abstract: No abstract text available
Text: NPN SILICON MICROWAVE TRANSISTOR NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 . RELIABILITY PROVEN IN SPACE:
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NE57800
NE57835
NE578
S22-S21
IS12I
L427525
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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