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    LMB Heeger Inc TB4-14-Semi-gloss Black

    Racks & Rack Cabinet Accessories UNI-PAC Top or Bottom Panel 3.75 x 13.875 x inch Black (Semi-Gloss)
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    Mouser Electronics TB4-14-Semi-gloss Black
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    LMB Heeger Inc TB4-14-Semi-gloss BlackPAIR

    Racks & Rack Cabinet Accessories UNI-PAC Top or Bottom Panel (Pair) 3.75 x 13.875 x inch Black (Semi-Gloss)
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    Mouser Electronics TB4-14-Semi-gloss BlackPAIR
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    ITT Interconnect Solutions CB6NSB4-14S-9SCAU

    Circular MIL Spec Connector CB 2C 2#16S SKT PLUG
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    Mouser Electronics CB6NSB4-14S-9SCAU
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    PEI Genesis CB6NSB4-14S-9SCAU
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    Amphenol Corporation AIB4-14S-2PS-025

    Circular MIL Spec Connector
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    Mouser Electronics AIB4-14S-2PS-025
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    Panduit Corp PCSB4-14S-2Y

    Terminals Multi-Tap Conn Single-Sided Clear
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    Sager PCSB4-14S-2Y
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    B414S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S KM41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF b414S KM41C16100 130ns 150ns 10OfiF 7Tb4142 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^b414S 0 0 17 0 0 3 031 « S r iG K PRELIMINARY KM23V4001 B G CMOS MASK ROM 4M-BH (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23V4001B is a fully static m ask program m able ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF b414S KM23V4001 23V4001B 288X8 150ns 32-pin, 600mil, KM23V4001B KM23V4001B)

    k 4145 transistor

    Abstract: SS9018 SS9014 SS9015 SS9016
    Text: SAMSUNG SEMICONDUCTOR INC 14E SS9015 D |7^b414S 0007405 fc> | 7- 2 9 - / f PN P EPITAXIAL SIL IC O N T R A N SIST O R LOW FREQUENCY, LÖW NOISE AMPLIFIER • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage


    OCR Scan     		PDF 00Q7M05 SS9015 SS9014 -100nA, k 4145 transistor SS9018 SS9014 SS9016

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET SFM 9214 FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ ^DS on = Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA (Max.) @ VDS= -250V


    OCR Scan     		PDF -250V OT-223 SFM9214 003b323

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF 16Mx4, 512Kx8) KM48C2104BK) KM48C2104BK 7ib414E

    KM44C1000

    Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
    Text: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF KM44C1000B KM44C1000B 110ns KM44C1000B-7 130ns KM44C1000B-8 150ns KM44C1000B-6 20-LEAD KM44C1000 km44c1000bj KM44C1000BJ6 KM44C1000BP-7

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BJ x16Bit 1Mx16 30bSS 40SOJ 7Rb4142 Q030b5t>

    Untitled

    Abstract: No abstract text available
    Text: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary


    OCR Scan     		PDF ib4142

    TAA 691

    Abstract: No abstract text available
    Text: KM48V512DJ CMOS DRAM ELECTRONICS 512K X 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM48V512DJ 512Kx 512Kx8 VU41H2 TAA 691

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1004DJ 16Mx4, 512Kx8) 7Th4142 D347c

    KM48S8030AT

    Abstract: KM48S KMM366S1623AT KMM366S1623AT-G0 KMM366S1623AT-G2 KMM366S1623AT-G8
    Text: NEW JEDEC SDRAM MODULE KMM366S1623AT KMM366S1623AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623AT is a 16M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S1623AT KMM366S1623AT 16Mx64 400mil 168-pin 0D374b4 KM48S8030AT KM48S KMM366S1623AT-G0 KMM366S1623AT-G2 KMM366S1623AT-G8

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM718V789/L 128Kx18 Synchronous SRAM 128K x 18- Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION •• •• •• •• •• •• •• •• •• •• •• The KM718V789/L is a 2,359,296-bit Synchronous Static


    OCR Scan     		PDF KM718V789/L 128Kx18 KM718V789/L 296-bit 02-1XXX b414S

    Untitled

    Abstract: No abstract text available
    Text: KM41V16000A/AL/ALL/ASL CMOSDRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C K M 41V 16000A /A L /A L L /A S L -6 60 ns 15 ns 110 ns K M 41V 16000A /A L /A L L /A S L -7 70 ns 20 ns 130 ns


    OCR Scan     		PDF KM41V16000A/AL/ALL/ASL 6000A 41V16000A 150ns b414S 24-LEAD 300MIL)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h?E D • 7^142 0Dlhfl34 D7S PRELIMINARY KM93C56V/KM93C66V CMOS EEPROM 2 K /4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ~ 5 . 5 V • Low power consumption — Active: 3 mA TTL


    OCR Scan     		PDF 0Dlhfl34 KM93C56V/KM93C66V 250pA 93C66 KM93C56V/66V

    KM684000

    Abstract: km684000-7 KM68512
    Text: CMOS SRAM KM684000/L/L-L 524, 288 WORD X 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550,uW(Max.) L-Version 110/<W(Max.) L-L-Version Operating


    OCR Scan     		PDF KM684000/L/L-L 100ns 550/j 385mW/MHz KM684000LP/LP-L 32-DIP-600 KM684000G/LG/LG-L 32-SOP-525 KM684000T/LT/LT-L 32-TSOP2-400F KM684000 km684000-7 KM68512

    Untitled

    Abstract: No abstract text available
    Text: The information in this data sheet can change upon complete cahracterization and evaluation A A > IO C fA > IO C l\ U A U 4 o 3 |U 4 o 0 135MHz CMOS True-Color RAM PAC of this new product._ KDA0485 FEATURES ♦ 135,110, 85MHz Pixel Clock


    OCR Scan     		PDF 135MHz KDA0485 85MHz 64x64x2 256x8 84-Pin KDA0485/0486 KDA0485L-135 135MHz

    Untitled

    Abstract: No abstract text available
    Text: KS0119 Data Sheet MULTIMEDIA VIDEO VIDEO ENCODER The KS0119 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels which allow


    OCR Scan     		PDF KS0119 80-QFP-1420C 00MAX 10MAX 100-QPF-1420C

    23E D

    Abstract: km6465
    Text: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating


    OCR Scan     		PDF KM6465P/KM6465LP 22-pin 300mil) KM6465P/LP 536-bit 23E D km6465

    KM416S1120AT

    Abstract: KM416S1120A KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12
    Text: KM416S1120AT SDRAM ELECTRONICS 512 K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • The KM416S1120A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance


    OCR Scan     		PDF KM416S1120AT 16Bit KM416S1120A b414S 033G3D D03b2b2 KM416S1120AT KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12