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    KM41C16100 Search Results

    KM41C16100 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM41C16100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM41C16100-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16100-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16100-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16100J-6 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100J-7 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100J-8 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100L-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16100L-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16100L-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16100T-6 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100T-7 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100T-8 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100TR-6 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100TR-7 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF
    KM41C16100TR-8 Samsung Electronics 16M x 1 CMOS DRAM with Fast Page Mode Scan PDF

    KM41C16100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


    Original
    PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    Untitled

    Abstract: No abstract text available
    Text: SAHSUN6 ELECTRONICS INC b?E ]> WË TlbMlME 0 0 1 b 0 ? l KM41C16100L T'îS • sriGK CMOS DRAM 16M X1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­


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    PDF KM41C16100L KM41C16100L 110ns KM41C16100L-7 130ns KM41C16100L-8 KM41C16100L-6 150ns 47/iF 100/iF

    1mx1 DRAM

    Abstract: taa 723 KM41C16100-6 KM41C16100-7 KM41C16100-8
    Text: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


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    PDF KM41C16100 16MX1 KM41C16100-6 KM41C16100-7 130ns KM41C16100-8 150ns cyclesf32ms KM41C16100 216X1 1mx1 DRAM taa 723

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C16100L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM41C16100L KM41C16100L-6 KM41C16100L-7 KM41C16100L-8 110ns 130ns 150ns KM41C16100L

    Untitled

    Abstract: No abstract text available
    Text: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed C M OS 1 6 ,7 7 7 ,2 1 6 X 1 Dynam ic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


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    PDF KM41C16100 130ns 150ns 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAC tnc KM41C16100L-6 60ns 15ns 110ns KM41C16100L-7 70ns 20ns 130ns KM41C16100L-8 80ns


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    PDF KM41C16100L KM41C16100L-6 110ns KM41C16100L-7 130ns KM41C16100L-8 150ns cycles/256ms KM41C16100L

    Untitled

    Abstract: No abstract text available
    Text: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan
    PDF KM41C16100 130ns 150ns 24-LEAD

    41C16100-7

    Abstract: No abstract text available
    Text: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications


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    PDF KM41C16100 41C16 24-LEAD 41C16100-7

    233Q

    Abstract: No abstract text available
    Text: KM41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


    OCR Scan
    PDF KM41C16100L KM41C16100L-6 KM41C16100L-7 KM41C16100L-8 110ns 130ns 150ns KM41C16100L 233Q

    41C16100

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C16100 16M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C16100 130ns 150ns 24-LEAD 41C16100

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S KM41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its


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    PDF b414S KM41C16100 130ns 150ns 10OfiF 7Tb4142 24-LEAD

    dram simm memory module samsung 30-pin 16M

    Abstract: No abstract text available
    Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin


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    PDF KMM5916100/T 16Mx9 KMM59161QG/T KM41C16100/T 24-pin 30-pin KMM5916100/T KMM5916100-6 KMM5916100-7 dram simm memory module samsung 30-pin 16M

    KM41C16100-7

    Abstract: No abstract text available
    Text: PRELIMINARY KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100 is a high speed CMOS 16,777,216X1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C16100 KM41C16100 216X1 cycles/32ms KM41C16100J KM41C16100-7

    z10-130

    Abstract: HM5116100 Hitachi Scans-001
    Text: 243 - 16M m £ ífc & WiEicBj rc TRAC CMOS D y n a m i c X i y ¿i- y y # ns) TRCY min (ns) TCAD min (ns) TAH rain (ns) TP rain (ns) RAM ( 1 6, m tt T*CY min (ns) TDH rain (ns) TRWC V D D or VC C (ns) (V) 7 7 7, m I DD max (mA) 216x1 ) A I DD STANDBY I SB/ I S82)


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    PDF 216x1) 28P1N M5116100J/Z/TT/RR-10 4K/64 1W5116100J/Z/TT/RR-6 IM5116100J/Z/TT/RR-3 4K/25S UPM217100-70 2K/32 UPD4217100-80 z10-130 HM5116100 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DG1S234 7T2 MSriGK KMM5916100/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC tRC 60ns 15ns 110ns KMM5916100-7 70ns 20 ns 130ns KMM5916100-8 80ns


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    PDF DG1S234 KMM5916100/T 110ns KMM5916100-7 130ns KMM5916100-8 KMM5916100/T KM41C16100/T 24-pin

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble