B3B72S Search Results

4C6 toroid

Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET

J0350

Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM

MC34050 "cross reference"

Abstract: MC34051 cross reference MC26LS32 AM26LS30 CROSS REFERENCE AM26L532 Am26LS32 "cross reference" MC75176 eia 232 quad line driver P646L MC75107
Contextual Info: ' MOTOROLA SC TELECOM 4bE D WÊ b3b72S3 Q QÔ 3 S 2 Q S MM0T5 Line Drivers General Purpose Output Current tprop Delay Capa» Time billty Max (ns) (mA) 15 15 S = Single Ended D = Differ­ ential Party Line Opera­ tion D Strobe or Enable 1/ 1/ 1/ l/ 1/ 1/

Contextual Info: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.

Contextual Info: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade

Contextual Info: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,

MJ10016HX

Contextual Info: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall

bd529

Abstract: transistors bd525 BD530 B0525 BD525 BD525-1 BD525-5 BD526 BD527 BD528
Contextual Info: MOTOROLA SC 6367254 ÍXSTRS/R DF|b3b72S4 F> MOTOROLA. SC ÍXSTR S/R 96 D 8 0 6 0 7 F T DDflObO? S D - 3 3 - 0 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON A M PLIFIER TR A N SISTO R S 6 0 - 8 0 - 100 VOLTS 10 WATTS NPN SILICON AN N ULAR* A M P LIFIER TR A N S IS TO R S

MTM12N10

Abstract: 221A-06 25CC MTP12N10E
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device

MCR68

Abstract: MCR69-1 motorola MCR69-2
Contextual Info: MOTOROLA SC DIODES/OPTO 31E I> 13 b3b72SS 0002040 2 ElflO T? M CR 68 Series M CR 69 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability

motorola 2N4427

Abstract: 2N4427 MOTOROLA 2N4427 parameters SILICON DICE motorola MRF207
Contextual Info: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA SC 34 I>F|b3b72SS 0D3Û0S3 1 DIODES/OPTO 34C 38053 D T~ 3 h 9 3 SILICON RF TRANSISTOR DICE (continued) 2C4427 DIE NO. — NPN LINE SOURCE — RF502.161 This die provides performance equal to or better than that of

M-0343

Abstract: m0343 MC3490 c3432 mc1711
Contextual Info: MOT OROL A SC TELECOM bSE D b3b72S3 OOflSnO 045 MC3430 thru MC3433 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA QUAD HIGH SPEED VOLTAGE COMPARATORS Quad, Differential Voltage Comparator/Sense Amplifiers The M C3430 thru MC3433 high speed com parators are ideal for applications

dm7117

Abstract: MC3456L burst generator MC3456 astable clock generator C3456 MC3456P
Contextual Info: MOTOROLA SC TELECOM bSE D b3b72S3 MOTOROLA DQfl71tib büß MC3456 SEMICONDUCTOR! TECHNICAL DATA Dual Tinning Circuit DUAL TIMING CIRCUIT The M C3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional term inals are provided

md2369

Contextual Info: MOTOROLA SC XSTRS/R 1SE F D § b3b72S4 G0flbS71 7 | -p M 3 ~ 2 .5 ' MHQ2369 MPQ2369 MHQ2369 f C A S E 632-08, STYLE 1 '] TO-116 M A X I M U M R A T IN G S Symbol Value U nit Collector-Emitter Voltage V cEO 15 Vdc Collector-Base Voltage V cB O 40 Vdc Emitter-Base Voltage

MJ50BD45

Contextual Info: MOT OROL A SC XSTRS/R F 4bE D b3b72S4 0 0 ci b 4 4 4 b H0 T b Orcler this data sheet b y M PD 1204/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T - 5 2 - \ 3 - q o MPD1204 EM S D river M odule For Driving High Current Bipolar Power Modules The MPD1204 is designed to d rive high cu rre n t, b ip o la r p o w e r Energy M an a g e m e n t

SCR 2N5061

Abstract: MCR101 motorola motorola opto scr 2n5062 2N5061 SCR 2N5060 2C5060
Contextual Info: MOTOROLA. SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 3 4 DE | b3b72SS OD3ñlSa 3 DIODES/OPTO 34C 38152 D SILICON THYRISTOR DIE (continued) 2C5060 DIE NO. LINE SOURCE — DTL60 Device assembled from this die type are similar to the fol­ lowing device types:

marking 25b sot23

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if­

mmt2857

Contextual Info: 74 MOTOROLA SC -CDIODES/OPTO} ]>F|b3b72SS 0030215 1 f 6367255 M OTOROLA SC DIODES/OPTO 34C 38215 r - it ~ t? MICRO-T (continued) - npn RF AMPLIFIER TRANSISTORS M M T 2 8 5 7 .A • designed for high-gain, low-noise amplifier, oscillator and mixer applications.

MC145151P1

Abstract: MC145151-1
Contextual Info: MOTOROLA s c L O G IC " P 5 D " i7 14E 0 M MOTOROLA | b3b72S2 5 | MC145151-1 A d van ce In fo rm atio n HIGH-PERFORM ANCE CMOS PARALLEL INPUT PLL FREQUENCY SYNTHESIZER T he MC145151-1 is programmed by 14 parallel ¡nput-data lines. The device features consist of a reference oscillator, selectable-reference

MC1558H

Abstract: MC1458CP
Contextual Info: MOTOROLA SC bSE TELECOM b3b72S3 D DDflSlSM 374 «MOTS MC1458,C MC1558 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA (DUAL MC1741) DUAL OPERATIONAL AMPLIFIERS (Dual MC1741) Internally Compensated, High Performance Dual Operational Amplifiers SILICON M ONOLITHIC

Contextual Info: I NOT RECO M M EN D ED FO R NEW D ES IG N S MOTOROLA SC DIODES/OPTO BSE D • b3b72SS 0060*106 T - z S 'I S 2N 4168 thru Silicon Controlled Rectifiers 2N 4174 2N 4184 Reverse Blocking Triode Thyristors . . . multi-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,

MCR1906-6

Abstract: MCR1906-8 sc 3228 MCR1906-4 MCR1906
Contextual Info: MO TO R O L A SC C D I O D E S / O P T O L,4E D P m " b3b72SS QGflbl23 ITT BinOT? M CR1906 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors T h e se d e v ic e s are g la ssiv a te d p lan ar co nstru ction d e s ig n e d fo r ap p lic a tio n s in

2N5444

Abstract: 2N5446 2N5445 2N5541 2003Z 104XA
Contextual Info: MOTOROLA SC DIODES/OPTO b4E ]> b3b72S5 DDñSTlñ IRE • M 0 T 7 2 N5444 th ru 2N 5446 T ria c s Silicon Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls,

thyristor welder

Abstract: MCR3935 OPTO thyristor gate MCR3835 MCR3835-2 MCR3935-2 thyristor 300 volt 3268
Contextual Info: MOTOROLA SC -CDIODES/OPTOJ ÏÏÏ DE I b3b72SS T - itr - / 7 MCR3835 Series MCR3935 Series Silicon Controlled Rectifier Reverse B lockin g Triode Thyristor . . . d e s ig n e d fo r in d u stria l a n d c o n s u m e r a p p lic a tio n s s u c h a s p o w e r su p p lie s,