4C6 toroid
Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET
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b3b72SH
TP1940
20Bias
4C6 toroid
UNELCO
TP1940
108 motorola transistor
4C6 ferrite
iWatt
FERRITE TOROID
dss125
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J0350
Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM
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b3b725M
-R53-OI
FTE801
J03501
J03SQ2
PTE801
JO3501
JO3502
J03502
J0350
J03501
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MC34050 "cross reference"
Abstract: MC34051 cross reference MC26LS32 AM26LS30 CROSS REFERENCE AM26L532 Am26LS32 "cross reference" MC75176 eia 232 quad line driver P646L MC75107
Text: ' MOTOROLA SC TELECOM 4bE D WÊ b3b72S3 Q QÔ 3 S 2 Q S MM0T5 Line Drivers General Purpose Output Current tprop Delay Capa» Time billty Max (ns) (mA) 15 15 S = Single Ended D = Differ ential Party Line Opera tion D Strobe or Enable 1/ 1/ 1/ l/ 1/ 1/
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b3b72S3
P/648
L/620
P/646
L/632
MC3450
MC3452
MC75107
MC75108
MC3453
MC34050 "cross reference"
MC34051 cross reference
MC26LS32
AM26LS30 CROSS REFERENCE
AM26L532
Am26LS32 "cross reference"
MC75176
eia 232 quad line driver
P646L
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Untitled
Abstract: No abstract text available
Text: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.
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b3b72S4
P33-3
2C6052HV
2C6059HW
Rang1000
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Untitled
Abstract: No abstract text available
Text: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade
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b3b72S4
2C6193HV
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,
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b3b72S5
2N51681
CR6200
S6210
MCR6200,
S6210,
S6220
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MJ10016HX
Abstract: No abstract text available
Text: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall
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b3b72S4
MJ10016HX,
MJ10016HX
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bd529
Abstract: transistors bd525 BD530 B0525 BD525 BD525-1 BD525-5 BD526 BD527 BD528
Text: MOTOROLA SC 6367254 ÍXSTRS/R DF|b3b72S4 F> MOTOROLA. SC ÍXSTR S/R 96 D 8 0 6 0 7 F T DDflObO? S D - 3 3 - 0 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON A M PLIFIER TR A N SISTO R S 6 0 - 8 0 - 100 VOLTS 10 WATTS NPN SILICON AN N ULAR* A M P LIFIER TR A N S IS TO R S
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b3b72S4
BD525
BD527
BD529
BD526,
BD528,
BD530
B0525.
BD525-1.
bd529
transistors bd525
BD530
B0525
BD525-1
BD525-5
BD526
BD528
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MTM12N10
Abstract: 221A-06 25CC MTP12N10E
Text: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device
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b3b72S4
MTM12N10
MTP12N10E
MTM12N10,
MTM12N10
221A-06
25CC
MTP12N10E
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MCR68
Abstract: MCR69-1 motorola MCR69-2
Text: MOTOROLA SC DIODES/OPTO 31E I> 13 b3b72SS 0002040 2 ElflO T? M CR 68 Series M CR 69 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability
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b3b72SS
MCR68)
MCR69)
MCR68
MCR69
MCR69-1
motorola MCR69-2
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motorola 2N4427
Abstract: 2N4427 MOTOROLA 2N4427 parameters SILICON DICE motorola MRF207
Text: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA SC 34 I>F|b3b72SS 0D3Û0S3 1 DIODES/OPTO 34C 38053 D T~ 3 h 9 3 SILICON RF TRANSISTOR DICE (continued) 2C4427 DIE NO. — NPN LINE SOURCE — RF502.161 This die provides performance equal to or better than that of
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b3b72SS
RF502
2C4427
2N4427
MRF207
motorola 2N4427
2N4427 MOTOROLA
2N4427 parameters
SILICON DICE motorola
MRF207
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M-0343
Abstract: m0343 MC3490 c3432 mc1711
Text: MOT OROL A SC TELECOM bSE D b3b72S3 OOflSnO 045 MC3430 thru MC3433 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA QUAD HIGH SPEED VOLTAGE COMPARATORS Quad, Differential Voltage Comparator/Sense Amplifiers The M C3430 thru MC3433 high speed com parators are ideal for applications
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b3b72S3
MC3430
MC3433
C3430
MC3433
b3b75S3
DG8S117
M-0343
m0343
MC3490
c3432
mc1711
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dm7117
Abstract: MC3456L burst generator MC3456 astable clock generator C3456 MC3456P
Text: MOTOROLA SC TELECOM bSE D b3b72S3 MOTOROLA DQfl71tib büß MC3456 SEMICONDUCTOR! TECHNICAL DATA Dual Tinning Circuit DUAL TIMING CIRCUIT The M C3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional term inals are provided
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b3b72S3
DQfl71tib
MC3456
MC3456
dm7117
MC3456L
burst generator
astable clock generator
C3456
MC3456P
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md2369
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 1SE F D § b3b72S4 G0flbS71 7 | -p M 3 ~ 2 .5 ' MHQ2369 MPQ2369 MHQ2369 f C A S E 632-08, STYLE 1 '] TO-116 M A X I M U M R A T IN G S Symbol Value U nit Collector-Emitter Voltage V cEO 15 Vdc Collector-Base Voltage V cB O 40 Vdc Emitter-Base Voltage
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b3b72S4
G0flbS71
MHQ2369
MPQ2369
O-116
MPQ2369
md2369
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MJ50BD45
Abstract: No abstract text available
Text: MOT OROL A SC XSTRS/R F 4bE D b3b72S4 0 0 ci b 4 4 4 b H0 T b Orcler this data sheet b y M PD 1204/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T - 5 2 - \ 3 - q o MPD1204 EM S D river M odule For Driving High Current Bipolar Power Modules The MPD1204 is designed to d rive high cu rre n t, b ip o la r p o w e r Energy M an a g e m e n t
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b3b72S4
1204/D
MPD1204
MJ50BD45
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SCR 2N5061
Abstract: MCR101 motorola motorola opto scr 2n5062 2N5061 SCR 2N5060 2C5060
Text: MOTOROLA. SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 3 4 DE | b3b72SS OD3ñlSa 3 DIODES/OPTO 34C 38152 D SILICON THYRISTOR DIE (continued) 2C5060 DIE NO. LINE SOURCE — DTL60 Device assembled from this die type are similar to the fol lowing device types:
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b3b72SS
DTL60
2N5060
2N5061
2N5062
MCR101
2C5060
MCR102
MCR103
13x13
SCR 2N5061
MCR101 motorola
motorola opto scr
SCR 2N5060
2C5060
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marking 25b sot23
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if
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b3b72SM
MMBR5179L
2N5179
marking 25b sot23
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mmt2857
Abstract: No abstract text available
Text: 74 MOTOROLA SC -CDIODES/OPTO} ]>F|b3b72SS 0030215 1 f 6367255 M OTOROLA SC DIODES/OPTO 34C 38215 r - it ~ t? MICRO-T (continued) - npn RF AMPLIFIER TRANSISTORS M M T 2 8 5 7 .A • designed for high-gain, low-noise amplifier, oscillator and mixer applications.
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b3b72SS
mmt2857
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MC145151P1
Abstract: MC145151-1
Text: MOTOROLA s c L O G IC " P 5 D " i7 14E 0 M MOTOROLA | b3b72S2 5 | MC145151-1 A d van ce In fo rm atio n HIGH-PERFORM ANCE CMOS PARALLEL INPUT PLL FREQUENCY SYNTHESIZER T he MC145151-1 is programmed by 14 parallel ¡nput-data lines. The device features consist of a reference oscillator, selectable-reference
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b3b72S2
000250b
MC145151-1
14-bit
MC145151-1.
MC145151
TN-24,
MC145151-1
MC145151P1
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MC1558H
Abstract: MC1458CP
Text: MOTOROLA SC bSE TELECOM b3b72S3 D DDflSlSM 374 «MOTS MC1458,C MC1558 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA (DUAL MC1741) DUAL OPERATIONAL AMPLIFIERS (Dual MC1741) Internally Compensated, High Performance Dual Operational Amplifiers SILICON M ONOLITHIC
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b3b72S3
MC1458
MC1558
MC1741)
MC1458/1558
MC1458
00SS128
MC14S8
MC1558H
MC1458CP
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Untitled
Abstract: No abstract text available
Text: I NOT RECO M M EN D ED FO R NEW D ES IG N S MOTOROLA SC DIODES/OPTO BSE D • b3b72SS 0060*106 T - z S 'I S 2N 4168 thru Silicon Controlled Rectifiers 2N 4174 2N 4184 Reverse Blocking Triode Thyristors . . . multi-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,
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b3b72SS
ZN4168
2N4174
2N4184
2N4190
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MCR1906-6
Abstract: MCR1906-8 sc 3228 MCR1906-4 MCR1906
Text: MO TO R O L A SC C D I O D E S / O P T O L,4E D P m " b3b72SS QGflbl23 ITT BinOT? M CR1906 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors T h e se d e v ic e s are g la ssiv a te d p lan ar co nstru ction d e s ig n e d fo r ap p lic a tio n s in
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QGflbl23
MCR1906
O-205AD)
MCR1906-6
MCR1906-8
sc 3228
MCR1906-4
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2N5444
Abstract: 2N5446 2N5445 2N5541 2003Z 104XA
Text: MOTOROLA SC DIODES/OPTO b4E ]> b3b72S5 DDñSTlñ IRE • M 0 T 7 2 N5444 th ru 2N 5446 T ria c s Silicon Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls,
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b3b72S5
2N5444
2N5446
2N5445
2N5541
2003Z
104XA
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thyristor welder
Abstract: MCR3935 OPTO thyristor gate MCR3835 MCR3835-2 MCR3935-2 thyristor 300 volt 3268
Text: MOTOROLA SC -CDIODES/OPTOJ ÏÏÏ DE I b3b72SS T - itr - / 7 MCR3835 Series MCR3935 Series Silicon Controlled Rectifier Reverse B lockin g Triode Thyristor . . . d e s ig n e d fo r in d u stria l a n d c o n s u m e r a p p lic a tio n s s u c h a s p o w e r su p p lie s,
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MCR3835-2
MCR3835
MCR3935
thyristor welder
OPTO thyristor gate
MCR3935-2
thyristor 300 volt
3268
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