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    MJ10016HX

    Abstract: No abstract text available
    Text: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall


    OCR Scan     		PDF b3b72S4 MJ10016HX, MJ10016HX

    MRF660

    Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
    Text: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor


    OCR Scan     		PDF i0fi70 O-254AA MHM5N100HX, MHM12N50HX, MHM25N20HX, MHM25N10HX, MHQ3468HX, MQ3468HX, MHQ4261HX, MQ4261HX, MRF660 MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522