2N6116
Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Text: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes
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b3b7255
2N6116
2N6117
2N6118
2n6116 motorola
Unijunction
motorola programmable unijunction
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7805 smd
Abstract: SMD transistor Mo 7805 voltage regulator IC voltage regulator 7805 7805 regulator smd transistor smd 2b SMD 7805 REGULATOR IC 7805 SMD motorola rf Power Transistor amplifier 3HH
Text: M O T O R O L A SC 4bE D X ST RS /R F • b3b7254 DG^SEEl MOTOROLA " 3 HriOTb 7^ 3 5 ~C ß SEM IC O N D U C T O R TECHNICAL DATA TP303T The RF Line U H F P o w e r T ra n sisto r The TP3031 is designed for 960 MHz base stations in both analog and digital applica
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b3b7254
TP3031
TP3031
T-33-09
7805 smd
SMD transistor Mo
7805 voltage regulator IC
voltage regulator 7805
7805 regulator smd
transistor smd 2b
SMD 7805
REGULATOR IC 7805 SMD
motorola rf Power Transistor
amplifier 3HH
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MOTOROLA POWER TRANSISTOR
Abstract: TP2033 motorola rf Power Transistor TRANSISTOR A 225
Text: MOTOROLA SC X S T R S / R F 4bE D • b3b7254 00*15172 5 « n O T b 'T-33 -'Oa\ MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA TP2033 Advance Inform ation The RF Line V H F P o w e r T ran sisto r 30 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2033 has been specifically designed and characterized fo r 12.5 V operation in
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b3b7254
TP2033
TP2033
145D-01,
Va2033
T-33-09
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
TRANSISTOR A 225
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1620CTR
Abstract: common anode MUR diodes 1610CTR MUR1610CTR MUR1620CTR diode 160a motorola 221A-06 MUR1605CT MUR1605CTR MUR1615CTR
Text: MOTOROLA fciME » • SEMICONDUCTOR TECHNICAL DATA b3b725S OOflbM'ib TbS ■MOT? MOTOROLA SC DIODES/OPTO M UR1605CTR M UR1610CTR M UR1615CTR M UR1620CTR S w itch m o d e Dual Ultrafast Power Rectifiers . . . designed for use in negative switching po w er supplies, inverters and as free w h e e l
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b3b725S
MUR1605CTR
MUR1610CTR
MUR1615CTR
MUR1620CTR
15CTC
MUR1605CTR,
MUR1610CTR,
MUR1615CTR,
1620CTR
common anode MUR diodes
1610CTR
MUR1620CTR
diode 160a motorola
221A-06
MUR1605CT
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MD6003
Abstract: MD6003F MD6001
Text: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous
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b3b7254
MD6001
MD6003
MD6002
MD6003F
M06001
MD6001,
MD6002,
MD6003,
MQ6001
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mpf4861a
Abstract: MPF4860 MPF4859A MPF4857A 2n4856 transistor F4859A MPF4859 mpf4861
Text: MOTOROL A SC 15E 0 I b3b7254 GGflb?^ 1 XSTRS/R F T-SS-2S' MPF4856, A thru MPF4861, A CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Rating MPF4856.A MPF4859.A MPF4857.A MPF4860.A MPF48S8,A MPF4861.A Unit Drain-Source Voltage VDS +40
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b3b7254
MPF4856,
MPF4861,
O-226AA)
MPF4856
MPF4859
MPF4857
MPF4860
MPF48S8
MPF4861
mpf4861a
MPF4859A
MPF4857A
2n4856 transistor
F4859A
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MCM84000AS60
Abstract: No abstract text available
Text: MOTOROLA SC M E H O R Y / A S I C M OTOROLA h S 1E ]> b3b7251 0003571 175 SEM ICO ND U C TO R • ■ TECHNICAL DATA MCM84000A MCM8L4000A Advance Information 4Mx8 Bit Dynamic Random A ccess Memory Module The M C M 8 4 0 0 0 A S is a 32M, dynam ic random a cc e ss memory (DRAM )
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b3b7251
30-lead
4000A
8L4000A
MCM84000AS60
MCM84000AS70
MCM84000AS80
MCM84000AS10
MCM8L4000AS60
MCM8L4000AS70
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chip die npn transistor
Abstract: No abstract text available
Text: 4bE D b3b7254 OQTSTSl M OT OR OL A 3 • HOTbT-31 XSTRS/R sc F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C3439HV Chip NPN Silicon Small-Signal Transistor DM0 m ini Discrete Military Operation . .designed for high-voltage, high-current applications in switching and amplifier service.
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b3b7254
HOTbT-31
2C3439HV
chip die npn transistor
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2N5945
Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
Text: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*
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b3b7254
2N5944
2N5945
2N5946
VK200
20/4B
56-590-65-3B
2N5946 MOTOROLA
2N5946
2N5945 Motorola
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JE3055
Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
Text: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.
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b3b725
JE2955
JE3055
JD2955
JD3055
current pm ic 3846
3055 npn
mt 3055
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2N6432
Abstract: 2N6432 MOTOROLA 2N6433
Text: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage
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b3b725M
2N6432
2N6433
O-206AA)
2N6433
2N3743
2N6432 MOTOROLA
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Microlab FXR
Abstract: BF431L MRF9011 MRF9011L SF-31N microlab tuner SF
Text: MOTOROLA SC XSTRS/R F MbE D • b3b7254 DORSOb'i 1 ■ N O T b MOTOROLA T - 'S H l ■ I SE M IC O N D U C T O R TECHNICAL DATA M RF 9011L BF431L* The RF Line N P N S ilic o n H igh -F re q u e n cy T ra n sisto r 'E u ro p e an Part Num ber . designed primarily for use in high-gain, low-noise small-signal amplifiers for
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b3b7254
T-51-H
OT-143
3ISA-05,
Microlab FXR
BF431L
MRF9011
MRF9011L
SF-31N
microlab tuner SF
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L285
Abstract: No abstract text available
Text: MOTORCLA SC 1HE 0 § b3b7254 QOfiSMI? S | XSTRS/R F T ^ 3 3 -i> 7 MOTOROLA * SEMICONDUCTOR MPS-UIO TECHNICAL DATA NPN SILICON HIGH V O L T A G E A M P L IF IE R T R A N SIS TO R 4l NPN SILICON A N N U L A R T R A N SIS T O R . . . designed for high-voltage video and luminance output stages in
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b3b7254
L285
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HP6218A
Abstract: MFOE108F MC10116 application MC10116 MFOE107F Q1 sym 602 motorola application notes 227240-3 SIECOR Fiber Optic cable MOTOROLA FIBER OPTIC
Text: MOTOROLA SC m DIODES/OPTO & 0 ä ik > T Ö R Ö lb D b3b7255 QQ337Qb b I MOT? L Ä MF0E107F MF0E108F » S E M IC O N D jU C irQ R S J § O • -^ g ^ ^ ^ T -4 1 -0 7 P.Q5SOXp091g-i PHOENIX^ARÎZoFTA'SSQâS^j^^ ^ ^ FIBER OPTICS A IG aA s FIBER O PTIC EM ITTER
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b3b7255
QQ337Qb
Q5SOXp091g-i
MF0E107F
MF0E108F
MFOD405F
MC10116
MC3302
MF0D102F
HP6218A
MFOE108F
MC10116 application
MC10116
MFOE107F
Q1 sym 602
motorola application notes
227240-3
SIECOR Fiber Optic cable
MOTOROLA FIBER OPTIC
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la 4508 ic
Abstract: s6055 la 4508 ic data cso5 5205R
Text: MOTOROL A SC XSTRS/R F 4fc>E b3b7254 D 00Tb372 7 I FI 0 T fca Order this data sheet by MHW5205/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M HW 5205 MHW 5205R The RF Line High O u tp u t D oubler 4 5 0 M H z C A TV A m plifiers 20 dB GAIN 450 M H z 60-CHANNEL
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b3b7254
00Tb372
MHW5205/D
5205R
60-CHANNEL
MHW5205
MHW5205R
la 4508 ic
s6055
la 4508 ic data
cso5
5205R
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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74hc299 motorola
Abstract: No abstract text available
Text: MOTOROLA SC L 0 6 IC blE D • b3b7252 G O ^ l^ O 2&7 MOTOROLA T m SEMICONDUCTOR - H ■ L 'O TECHNICAL DATA MC54/74HC299 8 -B it B idirectional Universal S h ift Register w ith Parallel I/O High-Performance Silicon-Gate CM OS N SUFFIX PLASTIC CASE 738-03
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b3b7252
MC54/74HC299
LS299.
HC299
ab3b72S2
MC54/74HC299
74hc299 motorola
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2N3866 MOTOROLA s parameters
Abstract: MPS3866A 2n3866A 2C3866 2N3866 2N3866 MOTOROLA
Text: MOTOROLA s c -CDIODES/OPTOÏ — 34 de |b3b7255 003ÔD51 î I 6 3 6 7 2 5 5 MOTOROLA SC ' - • 34c D I O D E S / O PTO> 3805 1 D v SILICON RF tRA N SISTO R DICE (continued T ~ 3 /- 2 3 2C3866 DIE NO. — NPN LINE SOURCE — RF502.151 This die provides performance equal to or better than that of
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b3b7255
RF502
2C3866
2N3866
2N509O
MPS3866
2N3866 MOTOROLA s parameters
MPS3866A
2n3866A
2C3866
2N3866 MOTOROLA
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2N1595 MOTOROLA
Abstract: 2n1595
Text: MOTOROLA SC DIODES/OPTO tiME D • b3b7255 OOäSTGl M0T7 2N 1595 thru S ilico n Controlled Rectifiers 2N 1599 Reverse Blocking Triode Thyristors These devices are glassivated planar construction designed for gating operation in mA//iA signal or detection circuits.
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b3b7255
2N1596
2N1599
2N1595 MOTOROLA
2n1595
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mtp2p45
Abstract: TP2P45 45MTP 314B03 HF 1932
Text: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,
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b3b7254
MTP2P50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
mtp2p45
TP2P45
45MTP
HF 1932
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T O b4 D b3b7255 GQbflEbfl 7 • M0T7 T -4 1 -5 0 r,;:0D?302 F IB E R P T iC S P H O T O D A R L IN G T O N T R A N S IS T O R FO R FIB ER O P T IC S Y S T E M S N P N S IL IC O N PHOTO D A R L IN G T O N T R A N S IS T O R
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b3b7255
C24614
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transistor D 2624
Abstract: No abstract text available
Text: MOT OROL A SC XSTRS/R 4bE D F • b3b725H 0GT4b4b Ô « N O T t T -3 3 -C R M O TO ROLA SEMICONDUCTOR MRF427 TECHNICAL DATA MRF427A The R F Li ne 25 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r high-voltage a p p lic a tio n s as a high -p o w e r
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b3b725H
MRF427
MRF427A
MRF427,
transistor D 2624
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SC X ST RS /R F UbE D • b3b725M O O ^ b M b T ■ flOTfe-F-JÖ'^S MOTOROLA SEMICONDUCTOR ■ h h h h m h h i TECHNICAL DATA DUO PRELIMINARY DATA mini MMCM4261HXV/HS (SINGLE) MD4261FHXV/HS (DUAL) MQ4261 HXV/HS (QUAD) Discrete Military Operation
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b3b725M
MMCM4261HXV/HS
MD4261FHXV/HS
MQ4261
MIL-S-19500/511
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MJF16206
Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
Text: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors
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b3b7254
1-33-OI
MJF16206/D
MJF16206
MJH16206
AN1040
MJF16206
MJH16206
MJW16206
MTP12N10 pin configuration
transistor D 1557
K1194
MPF930
TMJE210
ci mc7812
MC1391P
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