LM181E04
Abstract: LM181E04-B3 30pin FRC connector lg 8993 LG Philips LCD lcd screen LVDS connector 30 pins lcd LVDS display 30 pin connector philips ccfl inverter for 18.1 LCD TFT Display 22 inch lcd screen LVDS ccfl connector 40 pins lcd screen LVDS ccfl connector 40 pins
Text: LM181E04-B3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( Preliminary Specification ) Final Specification 18.1 SXGA TFT LCD Title BUYER SUPPLIER Philips MODEL LG.Philips LCD Co., Ltd. *MODEL LM181E04 SUFFIX B3 *When you obtain standard approval,
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LM181E04-B3
LM181E04
LM181E04
LM181E04-B3
30pin FRC connector
lg 8993
LG Philips LCD
lcd screen LVDS connector 30 pins
lcd LVDS display 30 pin connector
philips ccfl inverter for 18.1 LCD TFT Display
22 inch lcd screen LVDS ccfl connector 40 pins
lcd screen LVDS ccfl connector 40 pins
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D 1437 transistor
Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
Text: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10
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MMPQ6700
SOIC-16
2N3904
2N3906
D 1437 transistor
2N3904
2N3906
CBVK741B019
F63TNR
L86Z
MMPQ6700
NDM3000
NDM3001
SOIC-16
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Untitled
Abstract: No abstract text available
Text: MMPQ6502 MMPQ6502 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6502 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and
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MMPQ6502
SOIC-16
PN2222A
PN2907A
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Untitled
Abstract: No abstract text available
Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to
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MMPQ6700
SOIC-16
2N3904
2N3906
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D 1437 transistor
Abstract: CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16
Text: MMPQ6502 MMPQ6502 B E4 4 B3 E1 B1 E2 SOIC-16 B2 E3 C C4 4 C3 C1 C2 C1 C C2 3 Pin #1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C 2 B2 E 2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and
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MMPQ6502
SOIC-16
PN2222A
PN2907A
D 1437 transistor
CBVK741B019
F63TNR
L86Z
MMPQ6502
NDM3000
NDM3001
PN2222A
PN2907A
SOIC-16
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2n3906 PNP transistor DC current gain
Abstract: 2N3904 NPN TRANSISTOR OPERATIONS
Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 mA to
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MMPQ6700
SOIC-16
2N3904
2N3906
2n3906 PNP transistor DC current gain
2N3904 NPN TRANSISTOR OPERATIONS
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MMPQ6700
Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 µA to
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MMPQ6700
SOIC-16
2N3904
2N3906
MMPQ6700
2N3904
2N3906
CBVK741B019
F63TNR
L86Z
NDM3000
NDM3001
SOIC-16
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BLY91
Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _
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711062b
00b3bn
BLY91C/01
lthasaSOT122F
-SOT122F
MB8012
BLY91
BH 1117 F
Silicon Epitaxial Planar Transistor philips
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
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TA4100F
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TA4100F
Abstract: No abstract text available
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
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TA4100F
TA4100F
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TA4100F
Abstract: ta4100
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
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TA4100F
961001EBA2
TA4100F
ta4100
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MJE305
Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Text: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -
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MJE2955T
MJE3055T
MJE2955T,
MJE305
MJE3055T
MJE30*T
MJE2955T-MJE3055T
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NTE7493A
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator B3 Data Input Q NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator VCc Input B2 Q vcc Cascade Input A < B
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NTE7485,
16-Lead
NTE74LS85,
NTE74S85
NTE74C85
NTE7486,
NTE74HC86
14-Lead
NTE74LS86,
NTE7493A
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UHF TRANSISTOR
Abstract: BLV193 URA547 44w TRANSISTOR TRansistor A 940
Text: bb5 3 T 31 Philips Semiconductors GDETEBD b3 b M APX Product specification BLV193 UHF power transistor — N AMER PHILIPS/DISCRETE bTE ]> QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Emitter ballasting resistors for an
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bh53T31
BLV193
OT171
PINNING-SOT171
MRA557
UHF TRANSISTOR
BLV193
URA547
44w TRANSISTOR
TRansistor A 940
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BLW81
Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Text: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.
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7Z77164
BLW81
IEC134
Vrr-12
philips 2222 807 trimmer
philips 2222 808 trimmer
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MPS8599
Abstract: MPS8098
Text: M O TO RO LA " b3 b7255 SEMICONDUCTOR TECHNICAL DATA 0 m 3 3 fl3 fc,S2 Am plifier Transistors NPN MPS8098 M PS8099* PNP MPS8598 MPS8599* PNP NPN EMITTER EMITTER MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-Base Voltage E m itter-B ase Voltage
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b7255
MPS8098
PS8099*
MPS8598
MPS8599*
MPS859B
MPS8099
MPS8599
MPS8099
MPS8599
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FT5761M
Abstract: FT5761 B3 transistor
Text: FT5761M IL08 DARLINGTON TRANSISTOR ARRAY —SIDE VIEW— 2 1 3 4 4 5 6 7 8 9 10 11 12 C1 E1 C2 B2 E2 E3 B3 C3 E4 6 B4 3 C4 2 B1 5 1 9 8 COLLECTOR 7 BASE 11 12 EMITTER 10
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FT5761M
FT5761M
FT5761
B3 transistor
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transistor j 108
Abstract: No abstract text available
Text: ~ HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series ~ 110 ~100 Ct., [:;3 1=1. -~I 1 TO-220 TRANSISTOR I I I A. N.C. Horiz. Device Only Mounted to G-10. 70 B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ aJ < UJ !Q ~
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LATO127B3CB
w/TIP-29C
O-220)
O-220
LATO127B4CB
transistor j 108
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DS36A92
Abstract: DS3660 MAX36051 PSB77 ZS156014AB WS048836A DS1873
Text: 2/10/2011 PRODUCT RELIABILITY REPORT FOR DS3660, Rev B3 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292
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DS3660,
MAX17040
WS049701A
DS1878
WJ055999BA
DS3660
ZS156014AB
DS2784
ZJ160290AB
DS36A92
DS3660
MAX36051
PSB77
WS048836A
DS1873
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MAX2990
Abstract: TSMC 0.18um tsmc Activation Energy MAXQ2010 MAXQ1103
Text: 6/19/2009 PRODUCT RELIABILITY REPORT FOR MAXQ2010, Rev B3 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292
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MAXQ2010,
//ww04
MAXQ2010
MAXQ1103
MAX2990
MAXQ3108
TSMC 0.18um
tsmc Activation Energy
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2sa1306
Abstract: 2SA1306B 2SC3298B CI43 Motorola 406 R6872
Text: MOTOROLA SC XSTRS/R F MbE D b3 b ?5 S4 0 0 el37b7 MOTOROLA m0 4 Tb r(*er t*,'s data sheet by 2SC3298B/D T=-3 3 -Q { SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors • Designed for use as High Frequency Drivers in Audio Amplifiers
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2SC3298B/D
2SC3298B
2SA1306B
2sa1306
2SC3298B
CI43
Motorola 406
R6872
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b3a transistor
Abstract: Transistor Bo 47 MARKING B3A marking b3n
Text: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent
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SC-74)
DTA143TKA)
SC-70)
SC-59)
b3a transistor
Transistor Bo 47
MARKING B3A
marking b3n
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BUZ10A
Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B
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D04b3
BUP67
BUP68
BUP69
BUP70
BUP71
BUZ10
T0220
BUZ10A
BUZ10A
IEF520
T0220H
BUZ63
BUZ10
BUZ11
BUZ23
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XR-H100
Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Text: EXAR & CORP D e | 342Eblfi □004?b3 i I 3 4 2 2 6 18 EXAR 91D CORP XR-H100 Master-Chip Chip Size: 95 x 80 mils Total Components: 424 Bonding Pads: 18 Max. Operating Voltage: 20V NPN Transistors Small Signal: 73 Medium: 2 PNP Transistors Lateral: 22 T Pinch Resistors
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342EblÃ
XR-H100
60kfi:
450ft:
356kii
XR-H100
XR-1488/1489A
XR-1488
with568M
XR-1568/XR-1468C
XR-1488N
XR-1488P
XR-1489A
XR-1489AN
XR-1489AP
EXAR XR
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