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    B2834 Search Results

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    Intel Corporation FLLXT386BEB2834206

    IC TRANSCEIVER 1/1 160BGA
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    DigiKey FLLXT386BEB2834206 Tray 97 1
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    GCT Semiconductor Inc FFC2B28-34-G

    34W,0.5MM FFC CON,R/A,DUAL CONT,
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    DigiKey FFC2B28-34-G Cut Tape 1
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    FFC2B28-34-G Reel 4,000
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    FFC2B28-34-G Digi-Reel 1
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    Newark FFC2B28-34-G Reel 4,000 4,000
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    FFC2B28-34-G Cut Tape 3,990 10
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    ITT Interconnect Solutions DPD-B28-34P-1B

    004500-0484 - Bulk (Alt: DPD-B28-34P-1B)
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    Mouser Electronics DPD-B28-34P-1B
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    Interstate Connecting Components DPD-B28-34P-1B
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    Master Electronics DPD-B28-34P-1B
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    ITT Interconnect Solutions DPDMA-B28-34P-1B

    Conn Rack and Panel PIN 28 POS Crimp ST Cable Mount - Bulk (Alt: DPDMA-B28-34P-1B)
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    Newark DPDMA-B28-34P-1B Bulk 10
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    Master Electronics DPDMA-B28-34P-1B
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    ITT Interconnect Solutions DPDMA-B28-34P-1L

    041700-0577 - Bulk (Alt: DPDMA-B28-34P-1L)
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    B2834 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P819

    Abstract: P1026 p2532-01 P397 12x101 P394A
    Text: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­


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    P394A P3258 P394R P3226 5X104 3X105 1X105 3X104 P819 P1026 p2532-01 P397 12x101 PDF

    B1720-02

    Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
    Text: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01


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    422UCH 2856K B1720-04 B1720-02 B1720-05 B2144 B2144-01 B1918 B1918c. B2614-01, B1920-01 B2144-01 B1720 1x10-11 B1919-01 B1918 PDF

    B834 Y

    Abstract: T B834 B834 B2834 33P33
    Text: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 ¡1 m Highly Sensitive Photodiodes with Internal Gain Mechanism G e av alan ch e p h o to d io d es A P D d e te c t an d am p lify low level light by m ean s o f av alan ch e effects that take place w hen a rev erse bias is


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    RL-500Q KIRDB0029EA KIRDB0030EA B2834 B2834-01 KIRDB0034EA KIRDB0035EA B834 Y T B834 B834 B2834 33P33 PDF

    B5170

    Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
    Text: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No


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    B1720-02, B1720-05 B2144-01, KIROA0024EA B1919-01 B1920-01 B3188 KIRDA0026EA KIRDA0027EB KIRDA0028EB B5170 P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144 PDF

    B5170

    Abstract: B5170-05 G3476-01 G3476-10 P2682-01 B 1403 N P3226-02 B5170-02 G5125-10 P903
    Text: Applications of Infrared Detectors I n frared rad iatio n is u tilized in a w i d e ra n g e o f te c h n ic a l a n d sc ien tif ic fields, i n clu din g in d u str y , ag r i c u l t u re , m e d i c i n e , a s t r o n o m y , c o m m u n i c a t i o n s a n d r e m o t e s e n s i n g f ro m


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    B1710-02 B1918-01 B1720-05 G5125-10 P394A P3258-02 P394A P3982 P2750 P5138 B5170 B5170-05 G3476-01 G3476-10 P2682-01 B 1403 N P3226-02 B5170-02 G5125-10 P903 PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13 PDF

    B1919-01

    Abstract: B1920-01 hamamatsu PIN TO5
    Text: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919


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    0QQ271S B1720-04 B1720-02 B1720-05 B2144 B2144-01 B1918 B1918-01 B1919 B1919-01 B1920-01 hamamatsu PIN TO5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 fj. m Highly Sensitive Photodiodes with Internal Gain Mechanism Ge avalanche photodiodes APD detect and amplify low level light by means of avalanche effects that take place when a reverse bias is applied.


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    KIRDB0030EA KIRDB0029EA B2834-01 B2834 KIRDB0034EA PDF

    6X101

    Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
    Text: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109


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    000272b P2837-01 5X108 1X109 2X1010 4X102 3X109 6X109 5X109 K1713-01 6X101 P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas PDF

    Thermistor IR Detector

    Abstract: B1920-01
    Text: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length


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    B2297-02 B2297-03 B2297-04 2856K K1713-01 K1713-02 K1713-03 P1026 P2750 P2748 Thermistor IR Detector B1920-01 PDF

    B2538-05

    Abstract: B-3179 P3226
    Text: HAMAMATSU CORP ITE D • 4 2 2 'ïb a 'ï 00G2714 3 Ge Photodiodes: Cooled Types Type No. Out­ line No. /P.28\ \ 29/ 6 Package 9 Window Material Characteristics Effective Sensitive A rea S ize Effective Sensitive Area mm (mm2) Measure­ ment Temp. Co) Peak


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    00G2714 2856K B2536 B2538-01 B2538-02 B2538-03 K1713-01 K1713-02 K1713-03 P1026 B2538-05 B-3179 P3226 PDF

    P791-01

    Abstract: P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5
    Text: HAMAMATSU CORP 1=1E D • 422^ 30^ 0G02722 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) fC ) Peak Respon­ sivity


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    P791-01 5X103 P791-02 5X102 P791-03 4X102 P3207 B2614-01, P791-01 P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5 PDF

    P903

    Abstract: 4X103 P2051 p819 B1920-01
    Text: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­


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    P791-01 P791-02 P791-03 P3207 8X102 5X103 5X102 4X102 P2038-01 P903 4X103 P2051 p819 B1920-01 PDF