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    1X109 Search Results

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    1X109 Price and Stock

    Fix Supply ZUSAH3.1X109.4

    NBR ORING 3.1WD X 109.4ID MM PK5
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    DigiKey ZUSAH3.1X109.4 Bulk 5
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    Panasonic Electronic Components EEE-TK1V470P

    Aluminum Electrolytic Capacitors - SMD 47UF 35V TK SMD
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    TTI EEE-TK1V470P Reel 2,500 500
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    Panasonic Electronic Components EEE-TK1K470AQ

    Aluminum Electrolytic Capacitors - SMD 47UF 80V TK SMD
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    TTI EEE-TK1K470AQ Reel 400 200
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    Panasonic Electronic Components ERA-8AEB3743V

    Thin Film Resistors - SMD 1206 374Kohm 25ppm 0.1% AEC-Q200
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    TTI ERA-8AEB3743V Reel 10,000 5,000
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    Panasonic Electronic Components EEE-TK1K471AM

    Aluminum Electrolytic Capacitors - SMD 470UF 80V TK SMD
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    TTI EEE-TK1K471AM Reel 500 125
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    1X109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HXNV0100

    Abstract: No abstract text available
    Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109


    Original     		PDF HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000

    HS-26C31

    Abstract: HS-26C31RH HS9-26C31RH-8 HS1-26C31RH-Q HS1-26C31RH-8 HS9-26C31RH-Q 26C31 CDFP4-F16 26C31 leakage CERAMIC FLATPACK 16
    Text: HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free • EIA RS-422 Compatible Outputs (Except for IOS)


    Original     		PDF HS-26C31RH 1x109 RS-422 -55oC 125oC Mil-Std-1835 CDIP2-T16 -55oC, 125oC HS-26C31 HS-26C31RH HS9-26C31RH-8 HS1-26C31RH-Q HS1-26C31RH-8 HS9-26C31RH-Q 26C31 CDFP4-F16 26C31 leakage CERAMIC FLATPACK 16

    Untitled

    Abstract: No abstract text available
    Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s


    Original     		PDF HXNV0100 HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 ADS-14191

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s


    Original     		PDF HXNV01600 1x106 1x109 1x1012 1x10-10 1x1014 1x1015

    cdte

    Abstract: Laser photodetectors photoconductor pci-l-2te-1
    Text: PCI-L-2TE Series IR Laser Photoconductors Fast, Sensitive 2-12µm CO2 Laser Detectors Photoconductors Room Temperature, Optically Immersed FEATURES • D* 10.6 µm > 1x109 cmHz1/2/W • 10 nanosecond response time • Wide dynamic range • Compact, rugged, and reliable


    Original     		PDF 1x109 cdte Laser photodetectors photoconductor pci-l-2te-1

    Untitled

    Abstract: No abstract text available
    Text: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features ▪ Fabricated on Silicon On Insulator SOI CMOS Technology ▪ SOI4 Process (Leff = 0.8 um) ▪ Total Dose Hardness 300k rad (Si) ▪ Dose Rate Upset Hardness 1x109 rad(Si)/s ▪ Dose Rate Survivability


    Original     		PDF HMXMUX01 1x109 1x1012 1x1014 120ns HMXMUX01 ADS-14199

    HXNV0100

    Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
    Text: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109


    Original     		PDF HXVN0100 HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000 Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram

    r60 mkt

    Abstract: 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v
    Text: Loose R60 MKT Series Taped METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Fig. 2 Fig.1 Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.: AUTOMOTIVE . PRODUCT CODE: R60


    Original     		PDF 630Vdc) 1000Vdc) 1x10-9 005xinitial r60 mkt 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v

    fiber optic schematic symbols

    Abstract: No abstract text available
    Text: Inexpensive 20 to 160 MBd Fiber Optic Solutions for Industrial, Medical, Telecom, and Proprietary Data Communication Applications Application Note 1123 Introduction Low cost, fiber optic, data communications links have been used in place of copper wire in ­numerous industrial, medical and proprietary applications. The fiber optic


    Original     		PDF AV02-0728N fiber optic schematic symbols

    Untitled

    Abstract: No abstract text available
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


    Original     		PDF CM1213 CM1213 MSOP-10

    MK1573-02

    Abstract: No abstract text available
    Text: ICROCLOCK GenClock MK1573-02 HSYNC to Video Clock Description Features The MK1573 GenClock™ provides genlock timing for video overlay systems. The device accepts the horizontal sync HSYNC signal as the input reference clock, and generates a frequencylocked high speed output. Stored in the device are


    Original     		PDF MK1573-02 MK1573 27MHz 295-9800tel· 295-9818fax MDS1573-02B MK1573-02

    Untitled

    Abstract: No abstract text available
    Text: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free


    OCR Scan     		PDF HS-26C31RH 1x109 RS-422 Mil-Std-1835 CDIP2-T16 125PC 10sA/cm2 110pm 100pm

    varistor 102m

    Abstract: 270v varistor d 302 RA-362MS-V7 270v varistor RA-102M RA-242M-V7 RA-272M 10mm 270v cd 152m LR105073
    Text: RA-V7 SERIES SURGE ABSORBER @ OKAYA M SÂ<§ A Features File NO. Safety Agency : Standard • Fast response time. • Bi-polar surge absorber, it will fail open if the surge withstand capacity is exceeded. • Small inter-terminal capacitance. • High insulation resistance 1X109h. min .


    OCR Scan     		PDF 1X109h. 300times 8X20m UL1449 UL1414 E143446 E47474 LR105073 IEC60384-14 J95511033 varistor 102m 270v varistor d 302 RA-362MS-V7 270v varistor RA-102M RA-242M-V7 RA-272M 10mm 270v cd 152m LR105073

    Untitled

    Abstract: No abstract text available
    Text: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    OCR Scan     		PDF HR2000 1x109rad 1x101 1x101/cm2 HR2000

    207K AW

    Abstract: No abstract text available
    Text: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    OCR Scan     		PDF 1x10M 1x106 1x109 HR2000 HR2000 207K AW

    iec60384-14

    Abstract: surge protector Okaya RAM-302LAS Okaya Surge Protector RAM-362LAS E47474 LR105073 302LAS UL1449 25ot
    Text: Û SURGE PROTECTOR R • A • M-LAS series @ OKAYA M Features 9• à <V Ê it*Alaywuai • Fast response time. • Bi-polar and it will fail open if surge withstand capability is exceeded. • Small inter-terminal capacitance. • High indulation resistance 1X109£2 min .


    OCR Scan     		PDF 1X109 UL1414, UL1449 E47474, E143446 LR105073 IEC60384-14 J9650111 302us 50/60HZ surge protector Okaya RAM-302LAS Okaya Surge Protector RAM-362LAS E47474 LR105073 302LAS 25ot

    417 rotary knob

    Abstract: No abstract text available
    Text: Rotary knob sw itches S eries 417 Basic design: 12 positions, nominal width 19,4 mm, with mounted PC-board Type 421 Electrical Specification Mechanical Specification Switch resistance initial value after 1 5 0 0 0 cycles Insulation resistance Test voltage


    OCR Scan     		PDF 1x109Q 417 rotary knob

    HX6408

    Abstract: No abstract text available
    Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)


    OCR Scan     		PDF HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


    OCR Scan     		PDF 1x10u 1x109 1x101 1x108

    Untitled

    Abstract: No abstract text available
    Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HLX6408 5x10srad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6256 1x106ra 1x10l4 1x101 4551A72

    Untitled

    Abstract: No abstract text available
    Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly


    OCR Scan     		PDF HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


    OCR Scan     		PDF HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x101 1x109 32-Lead