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    B2538 Search Results

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    B2538 Price and Stock

    TapeCase B2-5-3-8-

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    DigiKey B2-5-3-8- Reel 50
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    TapeCase 2B2-5-3-8-

    TAPE MASKING AMBER 3/8"X5YDS
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    DigiKey 2B2-5-3-8- Reel 50
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    Vishay Spectrol ACCTRICAB253850610

    RES ACC BASE RAISER
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    DigiKey ACCTRICAB253850610 Box 50
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    Vishay Intertechnologies ACCTRICAB253850610

    Potentiometer and Trimmers Accessories Base Raiser M43 T18 1.6mm Height - Bulk (Alt: ACCTRICAB253850610)
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    Avnet Americas ACCTRICAB253850610 Bulk 15 Weeks 50
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    Newark ACCTRICAB253850610 Bulk 50
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    Bimba Manufacturing Company TB-2538-E

    Actuator, Twin Bore, sgl end, 25mm Bore; Stroke: 38mm; US Customary Units (Inch | Bimba TB-2538-E
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    RS TB-2538-E Bulk 5 Weeks 1
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    B2538 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.


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    PDF P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA P2750,

    P819

    Abstract: P1026 p2532-01 P397 12x101 P394A
    Text: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­


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    PDF P394A P3258 P394R P3226 5X104 3X105 1X105 3X104 P819 P1026 p2532-01 P397 12x101

    B1720-02

    Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
    Text: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01


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    PDF 422UCH 2856K B1720-04 B1720-02 B1720-05 B2144 B2144-01 B1918 B1918c. B2614-01, B1920-01 B2144-01 B1720 1x10-11 B1919-01 B1918

    B2538-05

    Abstract: B6175-05
    Text: Ge Photodiodes Cooled Types Spectral Response Range: 0.8 to 1.8 urn Achieving higher S/N by cooling T h e c h a rcte ristics of dark cu rrent and S / N can be im proved effectiviely by cooling Ge photodiodes. When cooled, it should be noted that the spectral response of Ge pho­


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    PDF B2538-05 B2614-05 B6175-05 KIRDB0023EA KIRDB0024EA KIRDB0025EB B2538-05

    B2538-05

    Abstract: B6175-05
    Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower tem perature detection limit: Approx. 200 °C By coo lin g G e photo d io d es, the dark c u rre n t can be reduced e ffe c ­ tively and the S/N ratio im proved.


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    PDF B2538-05 5x101 B2614-05 1x101 3x101 B6175-05 KIRDB0023EA KIRDB0024EA KIRDC0001EA B2538-05 B6175-05

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling G e photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength side.


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    PDF KIRDB0023EA

    B5170

    Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
    Text: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No


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    PDF B1720-02, B1720-05 B2144-01, KIROA0024EA B1919-01 B1920-01 B3188 KIRDA0026EA KIRDA0027EB KIRDA0028EB B5170 P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    B1919-01

    Abstract: B1920-01 hamamatsu PIN TO5
    Text: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919


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    PDF 0QQ271S B1720-04 B1720-02 B1720-05 B2144 B2144-01 B1918 B1918-01 B1919 B1919-01 B1920-01 hamamatsu PIN TO5

    B5170-02

    Abstract: No abstract text available
    Text: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region.


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    PDF avai10 B2614-03 B2614-05 X1014 B5170-02 B5170-05 B5170-02

    6X101

    Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
    Text: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109


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    PDF 000272b P2837-01 5X108 1X109 2X1010 4X102 3X109 6X109 5X109 K1713-01 6X101 P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas

    ATXP1

    Abstract: G3476-01 B2538 P2613 B2538-05
    Text: HAMAMATSU CORP n E ». L MSHTbOT OOOE^? T • IJStiBB^äM^SäSlBr Pyroelectric Infrared Detectors Type No. Effective Window Spectral Sensitive Material Response 1Hz 10Hz Area Noise M NEP 500,1,1 D* (500,1,1) (mm) (wm) (WW) (V/W) (nV/Hz’/*) (W/Hz'/a) (cmHz’-^/W)


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    PDF P2613 P2613-01 P2613-02 P2613-03 P2613-04 1x10-3 5x10-' 1x10-9_ 5x10-> 1x10s ATXP1 G3476-01 B2538 B2538-05

    Thermistor IR Detector

    Abstract: B1920-01
    Text: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length


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    PDF B2297-02 B2297-03 B2297-04 2856K K1713-01 K1713-02 K1713-03 P1026 P2750 P2748 Thermistor IR Detector B1920-01

    B2538-05

    Abstract: B-3179 P3226
    Text: HAMAMATSU CORP ITE D • 4 2 2 'ïb a 'ï 00G2714 3 Ge Photodiodes: Cooled Types Type No. Out­ line No. /P.28\ \ 29/ 6 Package 9 Window Material Characteristics Effective Sensitive A rea S ize Effective Sensitive Area mm (mm2) Measure­ ment Temp. Co) Peak


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    PDF 00G2714 2856K B2536 B2538-01 B2538-02 B2538-03 K1713-01 K1713-02 K1713-03 P1026 B2538-05 B-3179 P3226

    P791-01

    Abstract: P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5
    Text: HAMAMATSU CORP 1=1E D • 422^ 30^ 0G02722 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) fC ) Peak Respon­ sivity


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    PDF P791-01 5X103 P791-02 5X102 P791-03 4X102 P3207 B2614-01, P791-01 P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5

    P903

    Abstract: 4X103 P2051 p819 B1920-01
    Text: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­


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    PDF P791-01 P791-02 P791-03 P3207 8X102 5X103 5X102 4X102 P2038-01 P903 4X103 P2051 p819 B1920-01