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    KEMET Corporation C0603X101K5HACAUTO

    CAP CER 0603 100PF 50V ULTRA STA
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    DigiKey C0603X101K5HACAUTO Reel 16,000 4,000
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    C0603X101K5HACAUTO Cut Tape 7,452 1
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    Newark C0603X101K5HACAUTO Cut Tape 1,720 10
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    Avnet Abacus C0603X101K5HACAUTO 11 Weeks 12,000
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    Chip1Stop C0603X101K5HACAUTO 12,000
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    KEMET Corporation C0603X101J5GACAUTO

    CAP CER 100PF 50V C0G/NP0 0603
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    DigiKey C0603X101J5GACAUTO Reel 16,000 4,000
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    C0603X101J5GACAUTO Cut Tape 175 1
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    Avnet Americas C0603X101J5GACAUTO Reel 8 Weeks 4,000
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    C0603X101J5GACAUTO Ammo Pack 12 Weeks, 1 Days 1
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    Mouser Electronics C0603X101J5GACAUTO 11,410
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    TTI C0603X101J5GACAUTO Reel 508,000 4,000
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    TME C0603X101J5GACAUTO 9,323 1
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    Avnet Abacus C0603X101J5GACAUTO Reel 40,000 11 Weeks 4,000
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    Avnet Asia C0603X101J5GACAUTO 21 Weeks 4,000
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    Chip1Stop C0603X101J5GACAUTO 3,399
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    KEMET Corporation C0603X101J5GAC3190

    CAP CER 100PF 50V C0G/NP0 0603
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    DigiKey C0603X101J5GAC3190 Reel 8,000 8,000
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    C0603X101J5GAC3190 Cut Tape 7,756 1
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    Avnet Abacus C0603X101J5GAC3190 11 Weeks 8,000
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    KEMET Corporation C0603X101J3GACAUTO

    CAP CER 100PF 25V C0G/NP0 0603
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    DigiKey C0603X101J3GACAUTO Reel 4,000 4,000
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    C0603X101J3GACAUTO Cut Tape 3,393 1
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    Mouser Electronics C0603X101J3GACAUTO 9,258
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    Avnet Abacus C0603X101J3GACAUTO Reel 11 Weeks 4,000
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    Bourns Inc 4613X-101-104LF

    RES ARRAY 12 RES 100K OHM 13SIP
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    DigiKey 4613X-101-104LF Bulk 1,990 1
    • 1 $0.59
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    Avnet Americas 4613X-101-104LF Bulk 15 Weeks 2,000
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    Master Electronics 4613X-101-104LF
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    3X101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    induction furnace circuit diagram

    Abstract: INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
    Text: THE ELECTROMAGNET Visible Micro Gamma Rays Wavelength Frequency, Hz: 0.1Å X-Rays U.V. Infrared EHF 10Å 100Å 0.1µ 1Å 1µ 10µ 100µ 0.1cm 1cm 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 3x1 cycles per second VISIBLE SHORT WAVELENGTH


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    PDF 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 induction furnace circuit diagram INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING

    pin configuration of ic TL084

    Abstract: Instrumentation Amplifier IC with tl084 AD713 band pass TL074 top octave generator TL084 DATA SHEET AD711 AD712 LF347 TL084
    Text: a Quad Precision, Low Cost, High Speed, BiFET Op Amp AD713 FEATURES Enhanced Replacement for LF347 and TL084 CONNECTION DIAGRAMS AC PERFORMANCE 1 ms Settling to 0.01% for 10 V Step 20 V/ms Slew Rate 0.0003% Total Harmonic Distortion THD 4 MHz Unity Gain Bandwidth


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    PDF AD713 LF347 TL084 AD713K) 14-Bit AD711, AD712 16-Pin pin configuration of ic TL084 Instrumentation Amplifier IC with tl084 AD713 band pass TL074 top octave generator TL084 DATA SHEET AD711 AD712 TL084

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    IN4626

    Abstract: 300PA20 photodiode has capacitance of 5pf. bandwidth 650NM photodetector 5.6v zener OPT210P 650NM photodiode 650NM photodiode 40 kilohertz IN462 silicon photodiode
    Text: OPT210 FPO MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MΩ FEATURES DESCRIPTION ● BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz RF = 100KΩ Reduces Noise ● LARGE PHOTODIODE: 0.09" x 0.09" The OPT210 is a photodetector consisting of a high


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    PDF OPT210 300kHz 900kHz OPT210 650nm) IN4626 300PA20 photodiode has capacitance of 5pf. bandwidth 650NM photodetector 5.6v zener OPT210P 650NM photodiode 650NM photodiode 40 kilohertz IN462 silicon photodiode

    450 nm

    Abstract: 8436 8439 BPV10
    Text: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description 94 8390 BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation.


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    PDF BPV10 BPV10 78mm2 D-74025 20-May-99 450 nm 8436 8439

    XG404

    Abstract: DB10 DS3595-5 ds35954 DS3595
    Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The


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    PDF 54HSC/T630 16-Bit DS3595-4 DS3595-5 54HSC/T630 22-bit XG404 DB10 ds35954 DS3595

    PDB-C112

    Abstract: AMP CONNECTOR blue photodiode wavelength BNC/CONNECTOR BNC
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C112 DETECTORS INC. PACKAGE DIMENSIONS inch mm 0.175 [4.45] 0.073 [1.85] PHOTODIODE ACTIVE SURFACE TO TOP OF WINDOW PWB WINDOW Ø0.975 [Ø24.77] Ø0.4447 [Ø11.295] ACTIVE AREA (100 mm )


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    PDF PDB-C112 3x10-13 100-PDB-C112 PDB-C112 AMP CONNECTOR blue photodiode wavelength BNC/CONNECTOR BNC

    6030-S

    Abstract: BPV10 diode detector x band
    Text: BPV 10 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. 94 8390


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    PDF BPV10 78mm2 D-74025 6030-S diode detector x band

    Untitled

    Abstract: No abstract text available
    Text: CFPO-2 H: Ultra Low Phase Noise & High Stability OCXO Outline in mm - scale 1:3 - Package 50B ISSUE 4; 1 SEPTEMBER 2001 Description • 50.8SQ max Ultra low phase noise and high stability OCXO 1 Package Outlines ■ 50.8 x 50.8 × 38.0mm (50B) ■ 67.0 × 60.0 × 40.0mm (67A)


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    PDF 700mA 250mA 50B-12 1920MHz 50ppm/

    BPV10NF

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and


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    PDF BPV10NF 950nm) 870nm) 78mm2 D-74025

    BPV10NF

    Abstract: 8436 TSSF4500
    Text: BPV10NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters.


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    PDF BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 15-Jul-96 8436 TSSF4500

    Untitled

    Abstract: No abstract text available
    Text: CFPO-3: High Stability OCXO ISSUE 1; 1 SEPTEMBER 2001 Marking Includes Description • Model number including options ■ Frequency ■ Serial Number ■ Date Code (Year/Week) ■ Single Oven high stability OCXO Package Outlines ■ 50.8 x 50.8 × 38.0mm (50C)


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    PDF 3840MHz 50ppm/

    Untitled

    Abstract: No abstract text available
    Text: VFOV302 OCXO – STRATUM 2 Compliant HCMOS / SINE WAVE Features    RoHS Status Standard frequencies: 10MHz, 12.8MHz ± 0.1 ppb frequency stability over temperature Ultra low jitter and phase noise Applications     Telecommunication Systems


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    PDF VFOV302 10MHz, 10kOhms 50ppb 30ppb 1x10-9 5x10-10 3x10-10 2x10-10 1x10-10

    9107

    Abstract: C30810
    Text: Select Products Here TOX 9107 Silicon PIN Photodetector Go DESCRIPTION FEATURES The TOX 9107 is a large area, broad band detector application for both military and commercial users including HeNe and GaAs laser systems for range finding, data transmission plus both switching and


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    PDF 300nm 100mm² C30810 3x10-13 5x10-13 com/catalog/tox9107/tox9107 9107 C30810

    Untitled

    Abstract: No abstract text available
    Text: BPV10 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features


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    PDF BPV10 BPV10 78mm2 D-74025 24-Mar-04

    ocxo mv89

    Abstract: MV89 8.192 Mc 2X101 9243 a STABILITY
    Text: 13a, KIMa Ave., St.Petersburg,199155, RUSSIA. Tel:+7-812-350-9243; 350-4461. Fax:+7-812-350-7290. http://www.morion.com.ru E-mail: sale@morion.com.ru DOUBLE OVEN ULTRA HIGH STABILITY PRECISION OCXO MV89 Features: • High stability vs. temperature - up to ±5x10-11


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    PDF 5x10-11 1x10-10 2x10-10 3x10-10 5x1080 5x10-8/year 5x10-10/day; 3x10-8/year 3x10-10/day; ocxo mv89 MV89 8.192 Mc 2X101 9243 a STABILITY

    mm 13a

    Abstract: No abstract text available
    Text: PRELIMINARY Features: INFORMATION • Very short warm-up time – less than 45 seconds Research and Development • Frequency stability vs. temperature - up to ±3x10-8 Stage • Low profile package with height of 16 mm • Low power consumption Nominal frequency: 10 MHz


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    PDF 3x10-8 5x10-8 1x10-7 3x10-7/year 2x10-7/year mm 13a

    induction cooker fault finding diagrams

    Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
    Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120


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    PDF 03front induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer

    tr c110

    Abstract: PDB-C110
    Text: Blue Enhanced Photoconductive Silicon Photodiode PDB-C110 .084 [2.13] .076 [1.93] ±.005 [0.13] .053 [1.35] PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ANODE INDEX 2X Ø.017 [0.43] ANODE 120° VIEWING ANGLE .657 [16.69] .643 [16.33] .484 [12.29]


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    PDF PDB-C110 PDB-C110 tr c110

    TO-37

    Abstract: lead selenide "temperature controller" D-10
    Text: 03E 00025 fiqft4348 NE W E NG LAN D NEW ENGLAND 03 N.E.P. D D ^ | b S b M B 4 û DODODES Q | ~ NEW ENGLAND PHOTOCONDUCTOR SERIES - D, D2, G, G2 THERMOELECTRICALLY COOLED LEAD SELENIDE LEAD SULFIDE Electrical D* Peak, 750,1 Resistance Megohms Wavelength Cut-off (Microns


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    PDF 2x1011 5x1011 3x1011 7x109 1x1010 5x1010 O-51STAGE TO-37 lead selenide "temperature controller" D-10

    TDC1010

    Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
    Text: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology


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    PDF IDT7210 TDC1010 MA7010 16x16 MIL-M-38510 "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 ma7010 Marconi radiation hard

    G5832

    Abstract: No abstract text available
    Text: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­


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    PDF KIRD80039EA P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA G5832

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation


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    PDF 3X10-15 x1013 KOM2045 fl23t

    Untitled

    Abstract: No abstract text available
    Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions


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    PDF S1343D0 D0002D2 1461B Mil-H-38534