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    ATC600S3R Price and Stock

    American Technical Ceramics Corp ATC600S3R9BT250XT

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    Bristol Electronics ATC600S3R9BT250XT 5,726
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    American Technical Ceramics Corp ATC600S3R3AT250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000033 uF, SURFACE MOUNT, 0603
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    Quest Components ATC600S3R3AT250XT 4,215
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    American Technical Ceramics Corp ATC600S3R0AW250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.000003 uF, SURFACE MOUNT, 0603
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    Quest Components ATC600S3R0AW250XT 597
    • 1 $0.72
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    ATC600S3R0AW250XT 316
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    ATC600S3R0AW250XT 316
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    American Technical Ceramics Corp ATC600S3R6CT250T

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000036 uF, SURFACE MOUNT, 0603
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    Quest Components ATC600S3R6CT250T 464
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    ATC600S3R6CT250T 400
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    American Technical Ceramics Corp ATC600S3R3CT250T

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000033 uF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S3R3CT250T 440
    • 1 $1.05
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    • 100 $0.49
    • 1000 $0.4375
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    Find more ATC600S3R price and stock on Findchips.com

    ATC600S3R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE

    transistor marking code 1325

    Abstract: R04003 ims pcb filtronic Solid State
    Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State

    transistor SMD P1f

    Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic

    b0912

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G6003028-FS T1G6003028-FS b0912

    R04350B

    Abstract: MW7IC2725GNR1 wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725N MW7IC2725NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 2, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 R04350B wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725NBR1

    transistor SMD P2F

    Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
    Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State

    Rogers 4350B

    Abstract: ATC600S3R9BT250 ATC600S3R9BT250T GPS2020 AN1955 A113 A114 A115 AN1987 C101
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970N Rev. 2, 4/2008 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 Rogers 4350B ATC600S3R9BT250 ATC600S3R9BT250T GPS2020 AN1955 A113 A114 A115 AN1987 C101

    140-A525-SMD

    Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
    Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6003028-FS T2G6003028-FS TQGaN25

    MW7IC2725GNR1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

    ATC600S3R3BT250XT

    Abstract: ON SEMICONDUCTOR J122
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT ON SEMICONDUCTOR J122

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V


    Original     		PDF MHT2000N MHT2000NR1 MHT2000GNR1 5/2014Semiconductor,

    SMD Transistor p1f

    Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 SMD Transistor p1f bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD MIL-HDBK-263

    transistor SMD P1f

    Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f atc600s marking code 68W MARKING P1F SMD Transistor p1f MIL-HDBK-263 T491B105M035AS7015 Transistor p1f

    ims pcb

    Abstract: No abstract text available
    Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb

    ATC600S3R0

    Abstract: ATC600S0R3 ATC600S0R2 37C0064
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064

    SMD-B 053

    Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
    Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:


    Original     		PDF FPD4000AF FPD4000AF FPD4000AF-EB EB-2000AS-AB 880MHz) EB-2000AS-AA 85GHz) EB-2000AS-AC EB-2000AS-AE SMD-B 053 BTS 308 atc600 ATC600S1R0

    ATC600S0R

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G6003028-FS T1G6003028-FS ATC600S0R

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC970N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers MW5IC970NBR1 MW5IC970GNBR1 Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband


    Original     		PDF MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 MW5IC970NBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1

    ATC600S680JW250

    Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R

    MW7IC2725N

    Abstract: MW7IC2725GNR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 MW7IC2725NR1 ATC600S6R8CT250XT
    Text: Document Number: MW7IC2725N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 ATC600S6R8CT250XT

    ATC600S3R3BT250XT

    Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N ATC600S3R3BT250XT MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT A115

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G6003028-FL T1G6003028-FL