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    Kyocera AVX Components 600S6R8CT250XT

    Silicon RF Capacitors / Thin Film 250volts 6.8pF
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    Mouser Electronics 600S6R8CT250XT 1,885
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    TTI 600S6R8CT250XT Reel 500
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    ATC600S6R8CT250XT Datasheets Context Search

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    R04350B

    Abstract: MW7IC2725GNR1 wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725N MW7IC2725NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 2, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 R04350B wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725NBR1

    MW7IC2725GNR1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V


    Original     		PDF MHT2000N MHT2000NR1 MHT2000GNR1 5/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1

    MW7IC2725N

    Abstract: MW7IC2725GNR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 MW7IC2725NR1 ATC600S6R8CT250XT
    Text: Document Number: MW7IC2725N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 ATC600S6R8CT250XT

    ATC600S6R8CT250XT

    Abstract: ATC600S2R4BT250XT ATC600S3R3BT250XT A114 A115 AN1977 AN1987 C101 JESD22 MW7IC2425GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2425N Rev. 0, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 ATC600S6R8CT250XT ATC600S2R4BT250XT ATC600S3R3BT250XT A114 A115 AN1977 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF2004NB Rev. 0, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MMRF2004NBR1 The MMRF2004NB wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage


    Original     		PDF MMRF2004NB MMRF2004NBR1 MMRF2004NB