Untitled
Abstract: No abstract text available
Text: STAC0912-250 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 16 dB gain over 960 1215 MHz • ST Air Cavity / STAC package Description STAC265B
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STAC0912-250
STAC265B
STAC0912-250
DocID018767
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Untitled
Abstract: No abstract text available
Text: STAC1011-350 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 350 W with 15 dB gain over 1030 1090 MHz • ST Air Cavity / STAC package Description STAC265B
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STAC1011-350
STAC265B
STAC1011-350
DocID022043
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ATC100B390
Abstract: No abstract text available
Text: STAC1214-250 LDMOS L-band radar transistor Datasheet - preliminary data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 14 dB gain over 1200 1400 MHz • ST air cavity / STAC package Description STAC265B
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STAC1214-250
STAC265B
STAC1214-250
DocID022749
ATC100B390
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L-Band 1200-1400 MHz
Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description
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STAC1214-250
STAC1214-250
STAC265B
L-Band 1200-1400 MHz
ATC100B390
CR1206-8W
ATC100B101
ATC100B910
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STAC244
Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Text: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider
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AN3232
STAC244B
STAC265B
STAC244F
STAC265F
STAC244
drying oven
M252 substitution
AN3232
C10100
M252
seho
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ST T8 1060
Abstract: ST T4 1060 l0741 L0148 1090mhz ATC100A300JP
Text: STAC1011-350 LDMOS avionics radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■ ST Air Cavity / STAC package Description
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STAC1011-350
STAC1011-350
STAC265B
ST T8 1060
ST T4 1060
l0741
L0148
1090mhz
ATC100A300JP
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stac2942
Abstract: STAC2942B dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz
Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max
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STEVAL-TDR029V1
STAC2942B
STEVAL-TDR029V1
STAC2942B
stac2942
dow corning silicone compound
C10100
STAC244
STAC265B
"power semiconductor" phillips
austerlitz
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ST T8 1060
Abstract: L0165 ATC100B390KP500X l0393 L0090 L0112 960-1215mhz
Text: STAC0912-250 LDMOS avionics radar transistor Datasheet − preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 16 dB gain over 960 1215 MHz ■ ST Air Cavity / STAC package Description The STAC0912-250 is a common source
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STAC0912-250
STAC0912-250
STAC265B
ST T8 1060
L0165
ATC100B390KP500X
l0393
L0090
L0112
960-1215mhz
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ATC100B101
Abstract: STAC265B ATC100B910 ATC100B390 STAC1214-250
Text: STAC1214-250 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet − preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz
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STAC1214-250
STAC1214-250
STAC265B
ATC100B101
ATC100B910
ATC100B390
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Untitled
Abstract: No abstract text available
Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max
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STEVAL-TDR029V1
STAC2942B
STEVAL-TDR029V1
STAC2942B
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electrolytic capacitor 100uF 50v
Abstract: L0325 8W361J l0225 0912-250 capacitor 220uF W0418
Text: STAC0912-250 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 16 dB gain over 960 - 1215 MHz ■
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STAC0912-250
STAC0912-250
STAC265B
electrolytic capacitor 100uF 50v
L0325
8W361J
l0225
0912-250
capacitor 220uF
W0418
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Untitled
Abstract: No abstract text available
Text: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.
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STEVAL-TDR028V1
STAC2942B
STEVAL-TDR028V1
STAC2942B
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stac2942
Abstract: STAC2942B STEVAL-TDR028V1 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B
Text: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.
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STEVAL-TDR028V1
STAC2942B
STEVAL-TDR028V1
STAC2942B
stac2942
austerlitz
C10100
Solder Paste, Indium 5.8
STAC265B
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L1128
Abstract: L038 1030-1090MHz
Text: STAC1011-350 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■
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STAC1011-350
STAC1011-350
STAC265B
L1128
L038
1030-1090MHz
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