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    air variable capacitor

    Abstract: LET9045C M243 365 pF variable capacitor
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


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    PDF LET9045C 2002/95/EC LET9045C air variable capacitor M243 365 pF variable capacitor

    LET9045f

    Abstract: 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045
    Text: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


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    PDF LET9045F 2002/95/EC LET9045F 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045

    Untitled

    Abstract: No abstract text available
    Text: LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package Description


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    PDF LET9150 LET9150

    transistor j 127

    Abstract: No abstract text available
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960


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    PDF LET9045C 2002/95/EC LET9045C transistor j 127

    ATC100B620

    Abstract: LET9120 27291PC ATC100B101
    Text: LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package


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    PDF LET9120 LET9120 ATC100B620 27291PC ATC100B101

    LET9045F

    Abstract: M250 27291PC
    Text: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


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    PDF LET9045F 2002/95/EC LET9045F M250 27291PC

    2L TRANSISTOR

    Abstract: Capacitor 0.22 uF CR1206-8W LET9045C M243
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


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    PDF LET9045C 2002/95/EC LET9045C 2L TRANSISTOR Capacitor 0.22 uF CR1206-8W M243

    0821 ST

    Abstract: LET9045C 27291PC M243 CR1206-8W-112JB
    Text: LET9045C RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive M243 epoxy sealed


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    PDF LET9045C 2002/95/EC LET9045C 0821 ST 27291PC M243 CR1206-8W-112JB

    Untitled

    Abstract: No abstract text available
    Text: LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 60 W with 13.8 dB gain @ 1600 MHz • BeO free package


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    PDF LET16060C 2002/95/EC LET16060C DocID022249

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB


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    PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416

    Untitled

    Abstract: No abstract text available
    Text: LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @28 V = 45 W with 16 dB gain @ 1600 MHz • BeO free package


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    PDF LET16045C 2002/95/EC LET16045C DocID022224

    Untitled

    Abstract: No abstract text available
    Text: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960


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    PDF LET9045F 2002/95/EC LET9045F

    Untitled

    Abstract: No abstract text available
    Text: SD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 30 WATTS 28 VOLTS 9.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2904 is a gold metallized N-Channel MOS


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    PDF SD2904 SD2904 PC12230 1375G 400MHzTest 1010936C

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719