ATC100B3R3BT500XT Search Results

ATC100B3R3BT500XT Price and Stock

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Kyocera AVX Components 100B3R3BT500XT Silicon RF Capacitors / Thin Film 500volts 3.3pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B3R3BT500XT		4,112			1 $5.28 10 $4.55 100 $3.96 1000 $3.36 10000 $3.36	Buy Now
TTI	100B3R3BT500XT	Reel			500	1 - 10 - 100 - 1000 $3.33 10000 $3.33	Buy Now
American Technical Ceramics Corp ATC100B3R3BT500XT CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000033 UF, SURFACE MOUNT, 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100B3R3BT500XT		326			1 $3.75 10 $3.75 100 $2.5 1000 $2.3125 10000 $2.3125	Buy Now

ATC100B3R3BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor j241 Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
Untitled Abstract: No abstract text available Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960	Original	PDF	MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202NR3
MRF8S9232N Abstract: ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333 Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9232N MRF8S9232NR3 MRF8S9232N ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333
232273461009L Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9202N MRF8S9202NR3 232273461009L transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
ATC100B4R7CT500XT Abstract: J376 Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9232N MRF8S9232NR3 ATC100B4R7CT500XT J376
CRCW120610R0JNEA Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9120N MRF8S9120NR3 CRCW120610R0JNEA
OM-780-2 Abstract: transistors BC 457 om780-2 mrf8s9202g Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960	Original	PDF	MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202N OM-780-2 transistors BC 457 om780-2 mrf8s9202g