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    Kyocera AVX Components 100B1R5BT500XT

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    Kyocera AVX Components 100B1R5BT500XTV

    Silicon RF Capacitors / Thin Film 500V 1.5pF Tol 0.1pF Las Mkg Vertical
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    ATC100B1R5BT500XT Datasheets Context Search

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    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    mrf5s19060nr1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original     		PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B

    AN1977

    Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MW6IC1940N--1 MW6IC1940GNB MW6IC1940GNBR1 AN1977 AN1987 AN3263 J1213 MW6IC1940NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    CRCW12064701FKTA

    Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original     		PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 CRCW12064701FKTA a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NB

    LTE impedance tuner

    Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8HP21080H MRF8HP21080HR3 MRF8HP21080HSR3 LTE impedance tuner MRF8HP21080 CW12010T0100G J952 j179 j934 CW12010T0100GBK J9-22 j922

    AN1907

    Abstract: AN1977 AN1987 MW6IC1940NB MW6IC1940NBR1 1329A-03 AN3789 J1213
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-2 Rev. 4.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage


    Original     		PDF MW6IC1940N--2 MW6IC1940NB MW6IC1940NBR1 AN1907 AN1977 AN1987 MW6IC1940NBR1 1329A-03 AN3789 J1213

    J771

    Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N

    AN3263

    Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical


    Original     		PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 AN3263 AN1977 AN1987 j642 J1213 MW6IC1940NB

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21080H Rev. 0, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21080HR3 MRF7S21080HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21080H MRF7S21080HR3 MRF7S21080HSR3 MRF7S21080HR3

    G2225X7R225KT3AB

    Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB MRF6V12250HSR3 AN1955 J162 250GX-0300-55-22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

    C5750X7S2A106M

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		PDF AFT18S230S AFT18S230SR3 C5750X7S2A106M

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 MRF6S18060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and


    Original     		PDF MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1

    A9M15

    Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045N