SL 100 NPN Transistor

Abstract: PXB16050U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PXB16050U FEATURES QUICK REFERENCE DATA • Input and output matching cells allow an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

NF4-5V

Abstract: capacitor feed-through ERIE ceramic capacitor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.

741 LEM

Abstract: AM/amplifier LEM 741
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

RX1214B130Y

Abstract: RX1214B80W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium

transistor oc 76

Abstract: PLB16012U Erie Electronics LTD C 829 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier

FO-91 TRANSISTOR package

Abstract: at37271 TEKELEC AT37271 transistor scans sheet JCA707 PXB16050U Transistor Data chart
Contextual Info: blue binder, tab 12 Dataahaat statu* Product spécification cod* 9397 249 60142 data ol Issu* February 1990 PXB16050U NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure ; high emitter efficiency.

erie feedthrough capacitors

Abstract: PLB16012U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors

LM 886 IC chip

Abstract: TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature

RX1214B170W

Abstract: 100A101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium

NFM61RH20T332

Abstract: TEKELEC AT37271 AT37281 tekelec 630 transistor smd 4.z AT37271 capacitor variable BLV2045n capacitor variable ceramic NFM60R
Contextual Info: DISCRETE SEMICONDUCTORS E>^m SlnlEET BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 Philips Sem iconductors 2000 Feb 21 PHILIPS PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES

TRANSISTOR NPN 6822

Abstract: 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA
Contextual Info: Philips Semiconductors Product specification -r ^ S > 3 -0 S > NPN silicon planar epitaxial microwave power transistor P H IL IP S INTERNATIONAL LEE1015TA 711Q82b OÜMbnG T5T • P H I N SbE DESCRIPTION APPLICAT IO N S Diffused emitter ballasting resistors providing excellent

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature

NFM61RH20T332

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV2045N UHF power transistor Preliminary specification 1998 Oct 01 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature

atc100a101kp

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA

MCD623

Abstract: PXB16050U DK 51* transistor dk transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells

4046 application note philips

Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
Contextual Info: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent

MBC725

Abstract: RX1214B130Y RX1214B80W SC15
Contextual Info: DISCRETE SEMICONDUCTORS RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer

STT 433

Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

RX1214B170W

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEA TU R ES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK R E F E R E N C E DATA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification 1999 Jan 07 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature

GL033

Abstract: capacitor feed-through
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

NFM61RH20T332

Abstract: AT37281 TEKELEC AT37271 AT37271 ph98 BLV2045N MCD883
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT390A • Emitter ballasting resistors for optimum temperature

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium