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    TRANSISTOR NPN 6822

    Abstract: 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA
    Text: Philips Semiconductors Product specification -r ^ S > 3 -0 S > NPN silicon planar epitaxial microwave power transistor P H IL IP S INTERNATIONAL LEE1015TA 711Q82b OÜMbnG T5T • P H I N SbE DESCRIPTION APPLICAT IO N S Diffused emitter ballasting resistors providing excellent


    OCR Scan     		PDF LEE1015TA 711G82b OT122 T-33-05 711002b 004b200 TRANSISTOR NPN 6822 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA

    transistor c 2053

    Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
    Text: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2


    OCR Scan     		PDF 711Qflgb 2PB710; 2PB710A 2PD602 2PD602A -SC59 2PB710Q: 2PB710R: 2PB710S: 2PB710AQ: transistor c 2053 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ