ASI10727
Abstract: No abstract text available
Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: ØC 65 V VCEO 35 V VEBO 4.0 V I F E O O O O -65 C to +200 C TSTG -65 C to +150 C
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VHB40-28S
VHB40-28S
112x45°
ASI10727
ASI10727
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Untitled
Abstract: No abstract text available
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG B .112 x 45°
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VHB25-28F
VHB25-28F
/SI10724
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ASI10721
Abstract: VHB10-28F
Text: VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold Metalization System
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VHB10-28F
VHB10-28F
ASI10721
ASI10721
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VHB25-28S
Abstract: ASI10725
Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B
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VHB25-28S
VHB25-28S
112x45°
ASI10725
ASI10725
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ASI10724
Abstract: VHB25-28F
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB25-28F is Designed for FEATURES: B .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 4.0 A VCBO 65 V
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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ASI10728
Abstract: VHB50-28F
Text: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB50-28F is Designed for B FEATURES: .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 6.5 A VCBO 65 V
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VHB50-28F
VHB50-28F
ASI10728
ASI10728
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ASI10725
Abstract: VHB25-28S
Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D 4.0 A VCBO 65 V F E 35 V 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC
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VHB25-28S
VHB25-28S
112x45°
ASI10725
ASI10725
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Untitled
Abstract: No abstract text available
Text: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold Metalization System
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VHB50-28F
VHB50-28F
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ASI10724
Abstract: VHB25-28F
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B • Common Emitter • PG = 8.5 dB at 25 W/175 MHz • Omnigold Metalization System
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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ASI10720
Abstract: VHB1-28T
Text: VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-39 The ASI VHB1-28T is Designed for B C 45° ØA FEATURES: • • • Omnigold Metalization System F MAXIMUM RATINGS G IC 0.4 A VCBO 55 V VCEO 30 V ØD E 5 W @ TC = 25 C PDISS O O .029 / 0.740
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VHB1-28T
VHB1-28T
ASI10720
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ASI10721
Abstract: VHB10-28F
Text: VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: • • • Omnigold Metalization System B .112 x 45° A Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS C D 1.0 A IC E F G VCBO 65 V
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VHB10-28F
VHB10-28F
ASI10721
ASI10721
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ASI10726
Abstract: VHB40-28F
Text: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB40-28F is Designed for B FEATURES: .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 5.0 A VCBO 65 V
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VHB40-28F
VHB40-28F
ASI10726
ASI10726
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ASI10725
Abstract: VHB25-28S
Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: • Common Emitter • PG = 8.5 dB at 25 W/175 MHz • Omnigold Metalization System
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VHB25-28S
VHB25-28S
112x45°
490CHARACTERISTICS
ASI10725
ASI10725
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VHB40-28S
Abstract: TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072
Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 7.0 dB at 40 W/175 MHz
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VHB40-28S
VHB40-28S
112x45°
TRANSISTOR S 838
TRANSISTOR S 813
ic c 838
ASI10727
transistor c 838
transistor A 584
asi1072
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transistor oc 76
Abstract: ASI10727 VHB40-28S
Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB40-28S is Designed for .112x45° FEATURES: A B • • • Omnigold Metalization System ØC D H J MAXIMUM RATINGS G #8-32 UNC-2A IC 5.0 A VCBO 65 V VCEO VEBO PDISS
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VHB40-28S
VHB40-28S
112x45°
ASI10727
transistor oc 76
ASI10727
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ASI10723
Abstract: VHB10-28S
Text: VHB10-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • • • Omnigold Metalization System A B ØC MAXIMUM RATINGS D H 1.0 A IC J G #8-32 UNC-2A VCBO 65 V VCEO 35 V VCES
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VHB10-28S
VHB10-28S
112x45°
ASI10723
ASI10723
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ASI10723
Abstract: VHB10-28S
Text: VHB10-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 10 dB at 10W/175 MHz • Omnigold Metalization System
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VHB10-28S
VHB10-28S
112x45°
0W/175
ASI10723
ASI10723
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VHB1-28T
Abstract: ASI10720
Text: VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-28T is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE TO-39 FEATURES: B C 45° ØA • Class C Operation • PG = 13 dB at 1.0 W/175 MHz • Omnigold Metalization System
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VHB1-28T
VHB1-28T
ASI10720
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VHB40-28F
Abstract: TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132
Text: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability.
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VHB40-28F
VHB40-28F
TRANSISTOR j412
transistor J132
J442
J142
J705
J412
ASI10726
j132
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VHB50-28F
Abstract: ASI10728
Text: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG
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VHB50-28F
VHB50-28F
ASI10728
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VHB10-28F
Abstract: transistor npn 1854 "RF Power Transistor" ASI10721 138175
Text: VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is an NPN RF power transistor designed for 138-175 MHz VHF communications applications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L FLG
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VHB10-28F
VHB10-28F
ASI10721
transistor npn 1854
"RF Power Transistor"
ASI10721
138175
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VHB25-28F
Abstract: ASI10724
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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