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Abstract: No abstract text available
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG B .112 x 45°
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VHB25-28F
VHB25-28F
/SI10724
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ASI10724
Abstract: VHB25-28F
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB25-28F is Designed for FEATURES: B .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 4.0 A VCBO 65 V
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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ASI10724
Abstract: VHB25-28F
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B • Common Emitter • PG = 8.5 dB at 25 W/175 MHz • Omnigold Metalization System
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PDF
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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VHB25-28F
Abstract: ASI10724
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B
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Original
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PDF
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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