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    ASI10725 Search Results

    ASI10725 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ASI10725 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10725 Datasheets Context Search

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    VHB25-28S

    Abstract: ASI10725
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B


    Original     		PDF VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725

    ASI10725

    Abstract: VHB25-28S
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D 4.0 A VCBO 65 V F E 35 V 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC


    Original     		PDF VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725

    ASI10725

    Abstract: VHB25-28S
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: • Common Emitter • PG = 8.5 dB at 25 W/175 MHz • Omnigold Metalization System


    Original     		PDF VHB25-28S VHB25-28S 112x45° 490CHARACTERISTICS ASI10725 ASI10725