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    APT20M45SVR Search Results

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    APT20M45SVR Price and Stock

    Microchip Technology Inc APT20M45SVRG

    MOSFET N-CH 200V 56A D3PAK
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    DigiKey APT20M45SVRG Tube 50
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    Avnet Americas APT20M45SVRG Tube 26 Weeks 50
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    Mouser Electronics APT20M45SVRG 53
    • 1 $11.82
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    Newark APT20M45SVRG Bulk 50
    • 1 $11.82
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    Microchip Technology Inc APT20M45SVRG
    • 1 $11.82
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    Onlinecomponents.com APT20M45SVRG
    • 1 -
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    TME APT20M45SVRG 1
    • 1 $17.22
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    NAC APT20M45SVRG Tube 32
    • 1 $11.31
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    Avnet Silica APT20M45SVRG 28 Weeks 50
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    EBV Elektronik APT20M45SVRG 27 Weeks 50
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    Master Electronics APT20M45SVRG
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    • 10 $11.48
    • 100 $9.73
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    APT20M45SVR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M45SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45SVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45SVRG Microsemi Power MOSFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF

    APT20M45SVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45SVR APT20M45SVR

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT20M45SVR APT20M45SVR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45SVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVR A dvanced P o w er Tec h n o lo g y 200V 56A 0.045Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45SVR APT20M45SVR

    f3370

    Abstract: No abstract text available
    Text: A dvanced APT20M45SVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT20M45SVR APT20M45SVR f3370

    max4860

    Abstract: No abstract text available
    Text: APT20M45SVR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT20M45SVR max4860

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr