RF1K49093
Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49093
RF1K49093
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
AN7254
AN9321
AN9322
MS-012AA
RF1K4909396
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d8p05
Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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RFD8P05,
RFD8P05SM,
RFP8P05
TA09832.
d8p05
RFP8P05
RFD8P05
RFD8P05SM
RFD8P05SM9A
TB334
23842
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transistor a1442
Abstract: A1442 chip a1442 A1442EEWLT-P2
Text: A1442 Low Voltage Full Bridge Brushless DC Motor Driver with Hall Commutation and Soft Switching, and Reverse Battery, Short Circuit, and Thermal Shutdown Protection This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of
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A1442
transistor a1442
A1442 chip
a1442
A1442EEWLT-P2
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satellite decoder circuit diagram
Abstract: analog tuner CXA3038N dvb circuit diagram CXD1930 CXA3108Q CXD1930Q CXD1961AQ CXD1961Q QPSK Demodulator
Text: CXD1961AQ OVERCOMING FRONT-END DESIGN CHALLENGES IN DVB APPLICATIONS T he era of full-fledged digital satellite broadcasting is fast approaching. North America, Europe and Japan are currently broadcasting programs based on DVB, the European digital video broadcast standard, and soon
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CXD1961AQ
CXA3108Q
CXA3038N
CXD1930Q
satellite decoder circuit diagram
analog tuner
CXA3038N
dvb circuit diagram
CXD1930
CXA3108Q
CXD1930Q
CXD1961AQ
CXD1961Q
QPSK Demodulator
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
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AN7254
Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI
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RF1K49154
AN7254
AN9321
AN9322
MS-012AA
RF1K49154
RF1K4915496
TB334
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7n10l
Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Text: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum
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RFD7N10LE,
RFD7N10LESM
7n10l
RFD7N10LESM
7n10le
AN7254
AN7260
RFD7N10LE
RFD7N10LESM9A
TB334
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet January 2002 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
RFF70N06
MIL-S-19500.
AN7254
AN7260
AN9321
AN9322
RFG70N06
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14N05
Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Text: RFD14N05L, RFD14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD14N05L,
RFD14N05LSM
TA09870.
14N05
14n05l
05LSM
AN7254
AN9321
AN9322
RFD14N05L
RFD14N05LSM
RFD14N05LSM9A
TB334
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RFP40N10
Abstract: No abstract text available
Text: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs Features Title FG4 10, P40 0, 1S4 10S These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFG40N10,
RFP40N10,
RF1S40N10SM
TA9846
RFP40N10
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528E-3
Abstract: No abstract text available
Text: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET 4322.1 Features • 2.5A, 30V Title The RF1K49223 Dual P-Channel power MOSFET is F1K4 manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49223
RF1K49223
TA49223.
LitMS-012AA
528E-3
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transistor RFP25N05
Abstract: RFP25N05 AN7254 AN7260 AN9321 AN9322 TB334
Text: RFP25N05 Data Sheet Title FP2 05 bt A, V, 47 m, 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,
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RFP25N05
TA09771.
RFP25N05
transistor RFP25N05
AN7254
AN7260
AN9321
AN9322
TB334
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schematic diagram 48V solar charge controller
Abstract: schematic diagram 48V solar controller CP2725 CC109145331 J2007001 CP2000 GR-63-CORE Zone 4 test CC848781534 CP2725AC54TEZ CC109140027
Text: PRODUCT OVERVIEW Compact Power Line 48V DC Critical Power Solution Benefits Reliability • Compact 48V DC distributed power system • Efficiency approaching 97% • Maximum power in minimal space – Proven field performance – Advanced alarming – N+1 modularity
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877-LINEAGE
schematic diagram 48V solar charge controller
schematic diagram 48V solar controller
CP2725
CC109145331
J2007001
CP2000
GR-63-CORE Zone 4 test
CC848781534
CP2725AC54TEZ
CC109140027
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380LQ123M050A022
Abstract: 380LQ 380LQ123M016H012 380LQ153M016H022 380LQ183M016H032 380LQ183M016J012 380LQ223M016H042 380LQ223M016J022 380LQ273M016H452 380LQ273M016J032
Text: Type 380LQ 85 °C Compact, High Capacitance, Snap-In Aluminum Higher Capacitance per Case Size Type 380LQ is on average 27% smaller and more than 10 mm shorter than Type 380LX. This is achieved with a new can-closure method that permits installing capacitor elements into smaller cans. Approaching
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380LQ
380LX.
380LX,
380LX
380LQ123M050A022
380LQ123M016H012
380LQ153M016H022
380LQ183M016H032
380LQ183M016J012
380LQ223M016H042
380LQ223M016J022
380LQ273M016H452
380LQ273M016J032
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AN9321
Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
Text: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFD15N06LE,
RFD15N06LESM
TA49165.
AN9321
AN9322
RFD15N06LE
RFD15N06LESM
RFD15N06LESM9A
TB334
215e3
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RFP50N06
Abstract: No abstract text available
Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFG50N06,
RFP50N06,
RF1S50N06SM
175oC
RFP50N06
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a136* allegro
Abstract: No abstract text available
Text: A1351 High Precision Linear Hall Effect Sensor IC with a Push/Pull, Pulse Width Modulated Output This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of 6 months, the device will enter its final, Last Time Buy, order phase.
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A1351
a136* allegro
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Untitled
Abstract: No abstract text available
Text: A1185 and A1186 Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches These devices are in production, however, they have been deemed Pre-End of Life. These products are approaching end of life. Within a minimum of 6 months, these devices will enter their final, Last Time
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A1185
A1186
A1185EUA-T
A1192LUA-T
A1185LUA-T
A1186LUA-T
A1193LUA-T
A1185ELHLT-T
A1192LLHLX-T
A1186ELHLT-T
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Untitled
Abstract: No abstract text available
Text: A1354 High Precision 2-Wire Linear Hall Effect Sensor IC With Pulse Width Modulated Output This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of 6 months, the device will enter its final, Last Time Buy, order phase.
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A1354
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Untitled
Abstract: No abstract text available
Text: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFD16N06LE,
RFD16N06LESM
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Untitled
Abstract: No abstract text available
Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits gives optimum
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RFF70N06
RFF70N06
0-025i2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
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RFD8P06E,
RFD8P06ESM,
RFP8P06E
0-300i2
49e-10
1e-30
48e-4
42e-7)
40e-3
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FT3055LE
Abstract: No abstract text available
Text: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum
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RFT3055LE
0-150i2
OT-223
330mm
FT3055LE
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MT5139
Abstract: T5140 MT2060 MT2060A MT2061 MT2061A MT5140 mt marking 2061a
Text: M T5100-M T5103 M T 5 139, M T 5 140, MT2061A, M T2061, MT2060A, MT2060 Microsemi Corp. FEATURES • Exhibits leakage currents approaching the theoretical bulk characteristics of silicon. • O xide and glass junctions passivated for long-term stable device
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MT5100-MT5103
MT5139,
MT5140,
MT2061A,
MT2061,
MT2060A,
MT2060
MIL-S-19500
MIT5100-MT5103
MIT5139,
MT5139
T5140
MT2060
MT2060A
MT2061
MT2061A
MT5140
mt marking
2061a
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