nsmd smd
Abstract: AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C
Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat
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AND8195/D
nsmd smd
AND8195
SO8FL
Solder paste stencil life
AND8195/D
020C
1505C
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SO8FL
Abstract: FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C
Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat
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AND8195/D
SO8FL
FOOTPRINT PCB
nsmd smd
stencil tension
WS3060
so8 pcb pattern
1505C
020C
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3w high power white led driver circuit diagram
Abstract: LM3404 LM3404HV psop-8 CMSH2-60 LM3404HVMA LM3404HVMR SLF10145T-470M1R4
Text: National Semiconductor Application Note 1629 Chris Richardson May 2007 Introduction ible PSOP-8 package with an exposed thermal pad also called a die-attach paddle, or DAP will be compared to help the user estimate the die temperature under various conditions, and determine which package is best for their application.
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LM3404HV
AN-1629
3w high power white led driver circuit diagram
LM3404
psop-8
CMSH2-60
LM3404HVMA
LM3404HVMR
SLF10145T-470M1R4
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SO8 package fairchild
Abstract: so8 pcb pattern microfet
Text: February 2002 Application Note 7527 Dual Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new dual MicroFET™ 3x2 package with two exposed drain pads provides a true surface-mount alternative that greatly improves thermal characteristics, high current handling capability and low on-resistance. These
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SO8 package fairchild
Abstract: No abstract text available
Text: October 2001 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that
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SO8 package fairchild
Abstract: 021L2
Text: February 2002 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that
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Untitled
Abstract: No abstract text available
Text: TS982 Wide bandwidth, dual bipolar operational amplifier Datasheet - production data Description The TS982 device is a dual operational amplifier able to drive 200 mA down to voltages as low as 2.7 V. The SO-8 exposed-pad package allows high current output at high ambient temperatures
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TS982
TS982
DocID009557
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Application Note AN821
Abstract: 71622
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to
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AN821
16-Mai-13
Application Note AN821
71622
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Si7431DP
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7148DP
Si7148DP-T1-E3
Si7148DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR836DP
2002/95/EC
SiR836DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR166DP
2002/95/EC
SiR166DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7938DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 60 0.007 at VGS = 4.5 V 60 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7938DP
2002/95/EC
Si7938DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards
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SiR466DP
SiR466DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
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Si7288DP
2002/95/EC
Si7288DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7145DP
2002/95/EC
Si7145DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 60 0.00265 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 45.5 nC • • • • Halogen-free TrenchFET Gen III Power MOSFET 100 % Rg Tested
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SiR470DP
SiR470DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc
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SiR892DP
SiR892DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21
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SiR438DP
SiR438DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7143DP
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7956DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 4.1 0.115 at VGS = 6 V 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low On-Resistance in New Low Thermal
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Si7956DP
Si7956DP-T1-E3
Si7956DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7942DP Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.049 at VGS = 10 V 5.9 0.060 at VGS = 6 V 5.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance
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Si7942DP
Si7942DP-T1-E3
Si7942DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7478DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 20 0.0088 at VGS = 4.5 V 18.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7478DP
Si7478DP-T1-E3
Si7478DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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