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    SI7143DP Price and Stock

    Vishay Siliconix SI7143DP-T1-GE3

    MOSFET P-CH 30V 35A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7143DP-T1-GE3 Digi-Reel 2,983 1
    • 1 $1.93
    • 10 $1.23
    • 100 $1.93
    • 1000 $0.60233
    • 10000 $0.60233
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    SI7143DP-T1-GE3 Cut Tape 2,983 1
    • 1 $1.93
    • 10 $1.23
    • 100 $1.93
    • 1000 $0.60233
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    SI7143DP-T1-GE3 Reel 2,820 3,000
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    New Advantage Corporation SI7143DP-T1-GE3 12,000 1
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    • 10000 $0.7571
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    Vishay Intertechnologies SI7143DP-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7143DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7143DP-T1-GE3 Reel 16 Weeks 3,000
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    • 10000 $0.492
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    Mouser Electronics SI7143DP-T1-GE3 41,439
    • 1 $1.43
    • 10 $0.971
    • 100 $0.771
    • 1000 $0.555
    • 10000 $0.506
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    Newark SI7143DP-T1-GE3 Cut Tape 2,454 1
    • 1 $1.45
    • 10 $1.17
    • 100 $0.854
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    SI7143DP-T1-GE3 Reel 3,000
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    • 10000 $0.532
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    TTI SI7143DP-T1-GE3 Reel 15,000 3,000
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    Avnet Asia SI7143DP-T1-GE3 19 Weeks 3,000
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    • 10000 $0.5019
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    Chip One Stop SI7143DP-T1-GE3 Cut Tape 2,740
    • 1 $1.35
    • 10 $0.733
    • 100 $0.576
    • 1000 $0.421
    • 10000 $0.4
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    EBV Elektronik SI7143DP-T1-GE3 17 Weeks 3,000
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    Vishay Huntington SI7143DP-T1-GE3

    MOSFET P-CH 30V 35A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI7143DP-T1-GE3 32,509
    • 1 -
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    • 100 $0.7887
    • 1000 $0.5258
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    SI7143DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7143DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 8-SOIC Original PDF

    SI7143DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si7143DP

    Abstract: 26 258
    Text: SPICE Device Model Si7143DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7143DP 18-Jul-08 26 258 PDF

    SI7143DP-T1-GE3

    Abstract: Si7143DP si7143
    Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7143DP 2002/95/EC Si7143DP-T1-GE3 18-Jul-08 si7143 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7143DP 2002/95/EC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7143DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7143DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    6-5910

    Abstract: 7106 is 3063 AN609 Si7143DP
    Text: Si7143DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si7143DP AN609, 08-Feb-10 6-5910 7106 is 3063 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7143DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7143DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF