Untitled
Abstract: No abstract text available
Text: MB88344PFV 1/2 IL16 C-MOS D/A CONVERTER 25 AO28 26 AO29 27 AO30 28 AO31 VCC 29 NC 30 VDD2 31 VSS2 32 33 AO32 34 AO33 35 AO34 36 AO35 —TOP VIEW— AO6 43 18 AO21 AO7 44 17 AO20 AO8 45 16 AO19 AO9 46 15 AO18 AO10 47 14 AO17 AO11 48 13 AO16 AO15 12 19 AO22
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MB88344PFV
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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circuit diagram electronic choke for tube light
Abstract: 40w ELECTRONIC choke BALLAST DIAGRAM m861 ELECTRONIC BALLAST DIAGRAM 400W circuit diagram electronic ballast for 40W tube l U804 TUBE Light Choke function 2 way lighting circuit 40w electronic ballast circuit diagram dimmer 230V circuit diagram
Text: MEMSTYLE SPECTRA Modules range TECHNICAL INFORMATION SPECTRA Modules range Coverplate, Grid and Mounting Box Selection Guide GANG 1 2 3 4 6 8 9 12 18 24 M803 M804 M806 M808 U803 U804 U806 STAINLESS STEEL/MATT CHROME A801SS A802SS A803SS A804SS SATIN BRONZE
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A801SS
A802SS
A803SS
A804SS
A801SB
A806SS
A808SS
A809SS
A812SS
A818SS
circuit diagram electronic choke for tube light
40w ELECTRONIC choke BALLAST DIAGRAM
m861
ELECTRONIC BALLAST DIAGRAM 400W
circuit diagram electronic ballast for 40W tube l
U804
TUBE Light Choke function
2 way lighting circuit
40w electronic ballast circuit diagram
dimmer 230V circuit diagram
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uP6163
Abstract: AN12947A rt8206 ALC889X W25X16AVSSIG MX25L1605AM2C varistor Q20 K 275 SLG8SP585V RT8206B up6111
Text: 5 4 3 2 1 +VDDIO_CLK U21 +3V +1.05V +3V_CLK L28 C303 C293 C297 C299 C298 C285 4.7U/10V_8 4.7U/10V_8 .1u/16V_4.1u/16V_4.1u/16V_4.1u/16V_4 C302 .1u/16V_4 XTAL_OUT XTAL_IN R199 10 CLK_ICH_14M 33_4 Place the 33 ohm resistors close to the CK 505 C CPU_SEL CLK_SDATA
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BKP1608HS181T
150mA
20mil)
1u/16V
SLG8SP585V
BLM18AG601SN1D
uP6163
AN12947A
rt8206
ALC889X
W25X16AVSSIG
MX25L1605AM2C
varistor Q20 K 275
RT8206B
up6111
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AO11
Abstract: AO36 M62370GP AO-21
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: 3 7 b f i 522 DD 2 0 1 1 E S 47 H P L S B a i GEC P L E S S E Y FEBRUARY 1994 PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS2464 - 4.9 MV6639 POCSAG DECODER Supersedes November 1992 edition - DS2464 - 3.3 The MV6639 POCSAG decoder is capable of operating
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DS2464
MV6639
MV6639
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Untitled
Abstract: No abstract text available
Text: a WS256K32-XXX WHITE MICROELECTRONICS 256Kx32SRAM MODULE P R E L IM IN A R Y * FEATURES • Access Times 20, 25, 35ns 2 V D a ta Retention devices available ■ MIL-STD-883 Compliant Devices Available Commercial, Industrial and M ilitary Temperature Range
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WS256K32-XXX
256Kx32SRAM
MIL-STD-883
256Kx32,
512Kx16
512Kx32
WS256K32N-XHX
WS256K32-XG4X
256K32
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Untitled
Abstract: No abstract text available
Text: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16
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WMS256K16-XXX
256KX16
MIL-STD-883
as256Kx16
l/Cte-16
Ao-17
256K16
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Untitled
Abstract: No abstract text available
Text: WHITE MICROELECTRONICS 256Kx4 SRAM WPS256K4-XRJX PRELIMINARY# PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN CONFIGURATION TOP VIEW NCC 1 A3 [ I 2 A2 C 3 A ir 4 AOC 5 S5C 6 i/oí C 7 vccC 8 v ss C 9 1/02 d 10 W E □ 11 A17 m 12 A 1 6 d 13 A 1 5 C 14
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256Kx4
WPS256K4-XRJX
256Kx
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Untitled
Abstract: No abstract text available
Text: a WS512K16-XXX WHITE /MICROELECTRONICS 512Kx 1 6 SRAM MODULE ADVANCED* FEATURES • Access Tim es 17, 20, 25, 35ns ■ D ata I/O C om p atible w ith 3.3V devices ■ M IL-S TD -883 C om pliant D evices A v a ila b le ■ 2V M inim um D ata R etention fo r b a tte ry back up o p eratio n
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WS512K16-XXX
512Kx
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Untitled
Abstract: No abstract text available
Text: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range
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MS256K16-XXX
256Kx16
256Kx16
WMS256K16-XXX
AO-17
02HMX
03HMX
01HNX
02HIMX
03HNX
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 64K/128K/256K/512K x 36 SYNCHRONOUS SRAM MODULE FAMILY FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 144 position SO-DIMM Connector, - Berg part number: 61178
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64K/128K/256K/512K
IDT7MPV4160
IDT7MPV4161
IDT7MPV4162
IDT7MPV4162A
IDT7MPV4163
IDT7MPV416
PV4162A
IDT7MPV4160/61/62/62A/63
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ICE 47E
Abstract: oSC-70 7MB4066
Text: INTE G R A T E D DEV ICE 47E D B 4355 7 7 1 O Q I Q I G b b B I I D T PRELIMINARY IDT7MB4065 IDT7MB4066 256K x 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES - q é r Z ' i - IM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static
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IDT7MB4065
IDT7MB4066
20/256K
48-pin
str20
ICE 47E
oSC-70
7MB4066
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pv41
Abstract: No abstract text available
Text: PRELIMINARY IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 64K/1 28K/256K/51 2K x 36 SYNCHRONOUS SRAM MODULE FAMILY FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 144 position SO-DIMM Connector, - Berg part number: 61178
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64K/1
28K/256K/51
IDT7MPV4160
IDT7MPV4161
IDT7MPV4162
IDT7MPV4162A
IDT7MPV4163
IDT7MPV416
PV4162A
PV4163
pv41
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GG1Q
Abstract: GG1Q171
Text: INTEGRATE» DEVICE m 47E D Mâ2S7?l GG1Q171 b • IDT IDT7M4068 IDT7MB40G8 256K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice T ech no logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic
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GG1Q171
IDT7M4068
IDT7MB40G8
32-pin,
7M4068LxxN
7MB4068SXXP
GG1Q
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN *6526 CMOS 1C LC74731W,74732W ISAflYO l On-Screen Display Controller Preliminary Overview The LC74731W and LC74732W are on-screen display CMOS ICs that display characters and patterns on a TV screen under the control of a microcontroller. These ICs
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LC74731W
4732W
LC74732W
16-dot
16x16
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T3168
Abstract: ATT ORCA fpga gc 5.5V .22f 207 525s ATT1C05 op3120 D1313 oa259 ATT ORCA fpga architecture OA154
Text: T i T HELEC I t4E D C • DuSGOPti 001G23D 3fi2 ■ A T T E AT&T Advance Data Sheet February 1993 M icroelectronics Optimized Reconfigurable Cell Array (ORCA) Series Field-Programmable Gate Arrays Features The PLCs and PICs also contain routing resources
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QDS002fci
16-bit
84-Pln
132-Pin
208-Pin
240-Pin
304-PJn
225-Pm
280-Pin
364-Pin
T3168
ATT ORCA fpga
gc 5.5V .22f
207 525s
ATT1C05
op3120
D1313
oa259
ATT ORCA fpga architecture
OA154
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Untitled
Abstract: No abstract text available
Text: EDI816256CA •lì Hi-R£LiASIÜTY PRODUCT 256Kx16 MONOLITHIC SRAM FEATURES The EDI816256CA is a 4 megabit M onolithic CMOS Static RAM. The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access
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EDI816256CA
256Kx16
EDI816256CA
EDI816256
--------------------------------------F44
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation
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256Kx16
MIL-STD-883
256Kx16
WMS256K16-XXX
AO-17
256Kx
01HXX*
02HXX*
03HXX*
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Untitled
Abstract: No abstract text available
Text: a WMF256K8-XXX5 M/HITE /MICROELECTRONICS 256Kx8 MONOLITHIC FLASH FEATURES • A c c e s s T i m e s o f 7 0, 9 0 , 1 2 0 , 1 5 0 n s ■ O rg a n iz e d as 2 5 6 K x 8 ■ P a cka g in g : ■ C o m m e r c ia l, I n d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a nges
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WMF256K8-XXX5
256Kx8
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Z80000
Abstract: No abstract text available
Text: p ii il P ro d u c t S p e c ific a tio n October 1988 Z80,000 CPU FEATURES • Full 32-bit architecture and implementation ■ 4G billion bytes of directly addressable memory in each of four address spaces ■ Linear or segmented address space ■ Virtual memory management integrated with CPU
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32-bit
Z80000
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Untitled
Abstract: No abstract text available
Text: t t W MS256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation
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MS256K16-XDLX
256Kx16
MIL-STD-883
256Kx16
256K16
01HXX'
03HXX'
256KX
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GV1 M10
Abstract: TPC842 A7 B14
Text: tlX IU N X XC5200 Field Programmable Gate Arrays August 6,1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed
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XC5200
-403C
XC5202
XC5204
XC5206
XC5210
XC5215
PQ100
VQ100
TQ144
GV1 M10
TPC842
A7 B14
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7A4L
Abstract: WS256K8
Text: T T WS256K8-XCX I/WHITE /MICROELECTRONICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • Access T im e s 55 to 120nS PIN CONFIGURATION TOP VIEW ^ 32 n vcc 31 J A 15 30 j A 17 29 J W E 28 1 A 13 27 ;] as 26 J A9 25 H A11 24 □ OE S ta n d a rd M ic ro c irc u it D ra w in g , 5962-93157
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WS256K8-XCX
256Kx8
120nS
IL-STD-883
120nS
100nS
01HXX
02HXX
03HXX
04HXX
7A4L
WS256K8
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