CY62126EV30
Abstract: CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30
Text: Recommended Usage of Byte Enables in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL® SRAMs Software Version: None Associated Application Notes: None Application Note Abstract
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AN13842
AN13842.
CY62126EV30)
CY62136EV30,
CY62137EV30,
CY62136FV30,
CY62137FV30,
CY62137FV18)
CY62146E,
CY62146EV30,
CY62126EV30
CY62136EV30
CY62136FV30
CY62137EV30
CY62137FV18
CY62137FV30
CY62146E
CY62146EV30
CY62147EV30
CY62157EV30
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CY62157EV30
Abstract: 90 nm CMOS CY62147EV18 CY62147EV30 CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30
Text: Clarification on Byte Enable Operation in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL SRAMs GET FREE SAMPLES HERE Software Version: None Associated Application Notes: None
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AN13842
CY62126EV30)
CY62136EV30,
CY62137EV30,
CY62136FV30,
CY62137FV30,
CY62137FV18)
CY62146E,
CY62146EV30,
CY62147EV30,
CY62157EV30
90 nm CMOS
CY62147EV18
CY62147EV30
CY62126EV30
CY62136EV30
CY62136FV30
CY62137EV30
CY62137FV18
CY62137FV30
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Untitled
Abstract: No abstract text available
Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A
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CY62136EV30
CY62136CV30
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CY62137EV30
Abstract: No abstract text available
Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an
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CY62137EV30
CY62137CV30
48-ball
44-pin
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AN1064
Abstract: CY62167E 1M x 16 SRAM
Text: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)
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CY62167E
16-Mbit
AN1064
1M x 16 SRAM
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00107
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146E
44-pin
00107
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
48-ball
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CY62157EV30LL-45BVXI
Abstract: TSOP 48 thermal resistance
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
CY62157EV30LL-45BVXI
TSOP 48 thermal resistance
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55BV
Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is
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CY62167EV18
16-Mbit
55BV
AN1064
CY62167EV18LL
CY62167EV18LL-55BAXI
CY62167EV18LL-55BVXI
CY62167EV30LL
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AN1064
Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
Text: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This
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CY62126EV30
CY62126EV30
AN1064
CY62126DV30
CY62126EV30LL-45BVXI
CY62126EV30LL-45ZSXI
CY62126EV30LL-55BVXE
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146E
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE
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CY62136FV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the
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CY62167EV18
48-ball
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output
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CY62157EV18
CY62157DV18
CY62157DV20
48-ball
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,
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CY62137FV30
CY62137CV/CV25/CV30/CV33,
CY62137V,
CY62137EV30
48-ball
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A
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CY62147EV18
CY62147DV18
48-ball
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AN1064
Abstract: CY62137EV30 CY62137FV30 CY62137FV30LL CY62137V
Text: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing
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CY62137FV30
AN1064
CY62137EV30
CY62137FV30LL
CY62137V
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Untitled
Abstract: No abstract text available
Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62126EV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C
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CY62126EV30
CY62126DV30
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Untitled
Abstract: No abstract text available
Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an
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CY62147EV18
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the
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CY62147EV18
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE
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CY62146E
I/O15)
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AN1064
Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V
Text: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power
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CY62136FV30
I/O15)
AN1064
CY62136EV30
CY62136FV30LL
CY62136V
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