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    80-QFP-1420C

    Abstract: 7 seg KS57P2316 149345 33740 12seg
    Text: BONDING DIAGRAM PRODUCT PAGE KS57P2316 1 80 75 REV NO. 70 65 61 5 60 10 55 Y = 4460um ID : -1552 -1997 X = 3620um 50 15 CJ7235X 45 20 21 25 TITLE 30 35 40 41 CJ7235X #1 L/F MAT’L ALLOY42 PKG TYPE 80_QFP_1420C CHIP SIZE 3620x4460um DEV NAME CJ7235X_Rev0_1420C


    Original     		PDF KS57P2316 4460um 3620um CJ7235X ALLOY42 1420C 3620x4460um CJ7235X 80-QFP-1420C 7 seg KS57P2316 149345 33740 12seg

    AS4SD32M16

    Abstract: No abstract text available
    Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD32M16 512Mb: 192-cycle -40oC -55oC 125oC AS4SD32M16

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability


    Original     		PDF AS4SD8M16 096-cycle -40oC -55oC 125oC AS4SD8M16

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    PPAP level submission requirement table

    Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure
    Text: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage


    Original     		PDF

    V5-0515D3-R

    Abstract: V5-1212S3 V5-0512D3-R V5-2405S3 V5-0524D3-R V5-2424S3 V5-2405D3-R V5122 V5050 V5-1212D3-R
    Text: V5-3W Series MOTIEN TECHNOLOGY 3W Regulated Single & Dual output Features DC- DC V5-0 CO M O T 5 0 5 S 3 N V E R TE R IEN 042 1 T he V5 series is a family of cost effective 3W single & dual output DC-DC converters. These converters combine miniature package in a


    Original     		PDF 24-pin D-63069 V5-0515D3-R V5-1212S3 V5-0512D3-R V5-2405S3 V5-0524D3-R V5-2424S3 V5-2405D3-R V5122 V5050 V5-1212D3-R

    IS41LV44002B

    Abstract: 41LV44002B IS41LV44002B-50CTG IS41LV44002B-50T
    Text: IS41LV44002B 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE JANUARY 2010 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These


    Original     		PDF IS41LV44002B 16-MBIT) IS41LV44002B cycles/32 300-mil Alloy42 IS41LV44002B-50TI 41LV44002B IS41LV44002B-50CTG IS41LV44002B-50T

    IS45S16800E

    Abstract: 2MX16X4 IS45S16800E-7CTNA1 is45s16800e-7tla2 IS45S16800E-6BLA
    Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 DECEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and


    Original     		PDF IS45S81600E IS45S16800E 128Mb 54-pin IS45S16800E 2MX16X4 IS45S16800E-7CTNA1 is45s16800e-7tla2 IS45S16800E-6BLA

    is42s16320

    Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130

    5060 PLCC

    Abstract: P432 PLCC-20 PLCC44 PLCC-44 PLCC-84 SO16W SO20 Small Outline SO-12 thermal resistance PLCC20
    Text: APPLICATION NOTE THERMAL MANAGEMENT IN SURFACE MOUNTING The evolutionary trends of integrated circuits and printed circuits boards are, in both cases, towards improved performance and reduced size. From these points of view, a factor of major importance has


    Original     		PDF

    IS42S16160G-5BL

    Abstract: IS42S83200G IS42S16160G5BL
    Text: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


    Original     		PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb 54-Pin Alloy42 IS42S16160G-5BL IS42S83200G IS42S16160G5BL

    IS45S16400J

    Abstract: No abstract text available
    Text: IS42S16400J IS45S16400J 1 Meg Bits x 16 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


    Original     		PDF IS42S16400J IS45S16400J 64-MBIT) IS45S16400J-7BLA2 IS45S16400J-6CTLA2 IS45S16400J-6BLA2 54-ball IS45S16400J

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


    Original     		PDF accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram

    Laser Diode 405 nm Sharp

    Abstract: LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series
    Text: Electronic Components http://sharp-world.com/products/device/ March 2015 2015-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs 6 CMOS Camera Modules Road Map. 6


    Original     		PDF HT9A23E Laser Diode 405 nm Sharp LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series

    Spansion S29JL064

    Abstract: No abstract text available
    Text: S29JL064H 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Data Sheet S29JL064H Cover Sheet For new designs involving Fine-pitch Ball Grid Array (FBGA) packages, S29PL064J supersedes S29JL064H and is the factory


    Original     		PDF S29JL064H 16-Bit) S29JL064H S29PL064J S29PL-J Spansion S29JL064

    2DB1689-7

    Abstract: J-STD-020D
    Text: 2DB1689 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage


    Original     		PDF 2DB1689 2DD2652) OT-323 J-STD-020D Alloy42 MIL-STD-202, DS31639 2DB1689-7 J-STD-020D

    MX23256

    Abstract: MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640
    Text: MACRONIX 34Ê INC MX23256/57 D • 5bööööE DDQD17Q 3 .EVI p r e l im in a r y 3 2 ,7 6 8 X 8 STATIC READ ONLY MEMORY T ^ - g - is FEATURES DESCRIPTION . 32,768 X 8-bit organization . Access time - 150 ns max . Current-Operating; 80 mA max Standby: 20 mA max


    OCR Scan     		PDF DDQD17Q MX23256/57 28-pin MX23256 MX23257 MX23256/57 000sq. MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640

    cordless phone ic

    Abstract: POWER LINE FM INTERCOM
    Text: MACRONIX INC HX8013 34E D • 5t.flflâfl2 D O D D n O «1 ■ Preliminary T-7S-07-15 CORDLESS PHONE IC BASE UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity. Full CMOS design to save power and extend battery life.


    OCR Scan     		PDF HX8013 T-7S-07-15 000sq. cordless phone ic POWER LINE FM INTERCOM

    Untitled

    Abstract: No abstract text available
    Text: M A C RO NIX 34E IN C M X 2 3 1 0 2 4 S b a ô fiô a » Q O O G lb ? 3 EVIA PRELIM INARY 1 3 1 . 0 7 0 X 8 S T A T I C M E A D O N L Y MLI 1ÜIIY T 4 t-t3-1$ FEATURES D E S C R IP T IO N . 131,07 0 X 8 -b it organization . Access lime - ISO ns max , Current-Operating: 100 mA max


    OCR Scan     		PDF 26-pin 11X231024 000sq.

    Untitled

    Abstract: No abstract text available
    Text: T- :- 34E D MACRONIX INC SbfifififiE □OQDl'ifi B • T'75-O?-iS MXBQ14 Preliminary_¡ V B A CORDLBRSS PHONE 1C HANDSET UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity.


    OCR Scan     		PDF MXBQ14 000sq.

    INTEL 3226

    Abstract: 1666B
    Text: 34E D MACRONIX INC MX2332/33 St=00005 □QQDlt.3 L, p r e l im in a r y 4 0 9 6 X Ö STATIC READ ONLY MEMORY FEATURES DESCRIPTION . 4096 X 8-bit organization . Single +5V supply . Access time - 300 ns [max] . Totally static operation . Complete TTL compatible


    OCR Scan     		PDF MX2332/33 MX2332 MX2333 MX2332/3 Interfa29 000sq. INTEL 3226 1666B

    LGTV

    Abstract: equivalent transistor K 3531 k 3531 transistor tip 3035 transistor
    Text: NACRONIX INC 34E D SbûûâfiS DOOGSGb i MX5001/ MX500XL 1 ^ 1 JÊ DIRECT CONNECT TELEPHONE LINE INTERFACE DAA T 'I S - C r r - q o APPLICATIONS FEATURES • Comp»cl PC board mountable telephone tine Interface module • Handles loop currents from 0 to


    OCR Scan     		PDF MX5001/ 000sq. LGTV equivalent transistor K 3531 k 3531 transistor tip 3035 transistor

    Untitled

    Abstract: No abstract text available
    Text: 34E D MACRONIX INC Sbfißaö2 OQQQlbD 0 23C8192 i¥ IJ V 1,048,576x 8-bit CMOS ROM Description The 23C8192 is a 5V only, 8,338,608-bit, Read Only Memory. It is organized as 1,048,576 words by 8 bits per word, operates from a single 5V supply, has a static standby mode, and has an


    OCR Scan     		PDF 23C8192 23C8192 608-bit, 200ns. 000sq.

    mt 1389 fe

    Abstract: MX16C452 MX16C452QC mt 1389 se MCR 65-6 ior scr scr mcr 525 DTM 995 6C452 BW 3010 T
    Text: tIACRONIX INC 34E D • Sbôfiôô2 DDG0G33 4 ■ M X 16 C 452 _ _ 1 V I A DUAL ASYNCHRONOUS COMMUNICAHONS ELEMENT DESCRIPTION T h e M X 1 6C452 Is a dual u n i v e r s a l asynch r o no u s receiver and transmitter w i t h a b i d i r e c t i o n a l


    OCR Scan     		PDF DDG0G33 6C452 56kHz, mt 1389 fe MX16C452 MX16C452QC mt 1389 se MCR 65-6 ior scr scr mcr 525 DTM 995 BW 3010 T