74BCT241

Abstract: octal tri state buffer ic
Contextual Info: bSDllHE oo?aioa 3fiT National Semiconductor 74BCT241 Octal Buffer/Line Driver with TR1-STATEC Outputs General Description Features The 'BCT241 is an octal buffer and line driver with TRI­ STATE outputs designed to be employed as a memory and address driver, clock driver, or bus-oriented transmitter/re­

1s1211

Contextual Info: SN74AS4374B OCTAL EDGE-TRIGGERED D-TYPE DUAL-RANK FLIP-FLOPS WITH 3-STATE OUTPUTS SDAS109C D30B1, A PRIL 1988 - REVISED JAN U AR Y 1991 DWOMNMCKAQI 1W V BW • *-8tata Outputs Drtva Bua Unaa Dtrectty • Package Option« Include Plaatlc “Small Outllna" Paakagaa and Standard Plaatlc

Contextual Info: NEC n P D 70208 V 40 8 /1 6-Bit Microprocessor: High-Integration, CMOS NEC Electronics Inc. Description The ^PD70208 (V40'“ ) is a high-performance, lowpower 16-bit microprocessor integrating a number of commonly used peripherals to dramatically reduce the

8002A

Abstract: 8002b IS888 CI 8002 5530d-0 CRT5027 74LSXX 88i88 7x11 dot matrix LD E 5027
Contextual Info: STANDARD MICROSYSTEMS CORPORATION, CRT 8002 fJLPC FAMILY CRT Video Display Attributes Controller Video Generator VDAC PIN CONFIGURATION FEATURES □ On ch ip c h a ra c te r g e n e ra to r m a s k p ro g ra m m a b le 128 C h a ra c te rs (a lp h a n u m e ric an d g ra p h ic )

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

Contextual Info: IBM0317329N IBM0317329P Advance 512K x 32 Synchronous Graphics RAM Features • Single 3.3V + 0.3 • Fully synchronous; all signals registered on pos­ itive edge ot system clock • 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address

8085 WORD DOC

Abstract: m82c59 82C59A harris I82C59A 82C59A 8086 microprocessor hex code
Contextual Info: HARRIS S E M C O N D S E C T O R IS t f j 43QS271 DQllOOl 1 J ” ~ ^ & - 3 3 '/ 3 S 3 h a r r is Q 2 C 5 9 A CMOS Priority a . . Ä Interrupt Controller R E F E R E N C E P A G E 4 -1 5 6 F O R a p p l ic a t io n n o t e 109 Features Pinouts TOP VIEW • Pin Compatible with NMOS 8259A

Contextual Info: FLASH MEMORY CMOS 8 M 1M x 8 BIT MBM29 LV008 TA-70-go-i2/MBM29 LV008 BA-7a-9o-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

ES688

Abstract: ess 1688f ES1688 msi motherboard circuit diagram ES1688F PC MOTHERBOARD oi CIRCUIT diagram audiodrive
Contextual Info: E S 1688 AudioDr'we DESCRIPTION FEATURES Single, mixed-signal, 16-bit stereo VLSI chip Record, compress, and playback voice, sound and music High-quality 20 voice, ESFM FM music synthesizer, patents pending 6 channel mixer with stereo inputs for line-in, CD-ROM, TV, and a

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

TLP 527

Abstract: TLP180 4x20 WV-120 2SA30 b9 545 02 082 00 3sx40 30X30 4X25 idtos
Contextual Info: LARGE ALUMINUM ELECTROLYTIC CAPACITORS Snap-in Terminal Type, Standard Series Standard snap-in terminal type Extended Voltage range of 6.3-500V For 500WV products, apply only FL series, high ripple use Including height 20mm products, low profile sized (Voltage range of 160-450V)

Contextual Info: < £ 2 ¡ L P r o d u c t S p e c if ic a t io n œ Z86E07 CMOS Z8 8-BlT OTP _ MICROCONTROLLER FEATURES • Low-Cost, 8-Bit CMOS MCU OTP Support for Z86C07 ■ 18-Pin Package (DIP, SOIC) ■ 2 Kbytes of One-Time-PROM

Z86E0812PSC

Abstract: Z86E0808PSC of Z86E08 z86eo Z86C08 Z86E08 z86c08 instruction set Z86E0812 zilog z86E08
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION <£>Z i Iíj G Z86E08 CMOS Z8 8 -B it M ic r o c o n t r o ll e r FEATURES • 8-bit CMOS m icrocom puter, 18-pin DIP ■ 2K bytes of one time PROM ■ Low cost ■ 144 bytes of RAM ■ Low noise program m able ■ Two program m able 8-bit counter/tim ers each with a &bit program m able prescaler.

D033151

Abstract: BA QD
Contextual Info: KM44S16020AT SDRAM ELECTRONICS 8M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

KM416S4030A

Abstract: km416s4031 KM416S4030AT-G
Contextual Info: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

EPA1064

Abstract: EPA1070
Contextual Info: T1/CEPT/ISDN-PRI Carrier Interi ace Transformers E L E C T R O N IC S , IN C - EPA1064 thru EPA1070 • Isolation at REX and TemninaJs ■ ■ S ingle P ac k a g e Configuration ■ E le c tr ic a l P a r a m e l a ^ @ 2 5 *C = s PC A Rari Nun*er or i |mM U ln j

tractel

Abstract: s8m9
Contextual Info: •HYUNDAI HY51V4400B Series 1M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

VP254

Contextual Info: 2-channel PRE/REC amplifier with auto-tracking interface BA7180AS/BA7180AFS PRE/REC amplifiers Video ICs The B A 7180AS and B A 7180A F S are P R E /R E C am plifiers developed for use in video cassette recorders. They ha­ with AGC and built-in channel and REC/PB switches on a single monolithic IC.

LH5S

Contextual Info: / - V •I'. SPEC 0o. E L 0 7 X 0 7 3 I S S 0 E: Sec. 20 1905 To , S P E C Product Type I F ! C A T I O H S 4M b i t MAS K ROM LH5V4RXX l o d e l No. LH53V4R00T JKThis «pecificatioos cootains 12 pages including the cover and appendix. I f you have any objections, please contact as before issuing purchasing order.

4kx8 static ram ttl

Abstract: QQ042 lh5921
Contextual Info: SHARP ELEK/ MELEC »IV 2bE D • 61607=18 000423b b « S R P J PRELIMINARY LH5921/LH5922/LH5924 CMOS 32K 4KX8 Dual Port RAM LH5921/LH5922/LH5924 CMOS 32K (4KX8) Dual Port RAM ■ ■ Description The LH5921, LH5922/U and LH5924/U are dual port static RAMs organized as 4KX8 bits that have

PBD20

Abstract: PWD20 la 5531 MINIBRIDGE PWD40 PWD05 PAD80 PBD05 PBD100 PAD10
Contextual Info: . „Ï. A M E R I C AN/ ELECTRONIC 03 D e l e c t r o n ic • 0b7b743 D0D0737 T ■ ! ' “*'w »r~ SERIES PAD PBD PWD DEVICES, INC. A N A M E R IC A N E L E C T R O N IC C O M P O N E N T S C O M P A N Y 21 G RAY O AKS AVEN UE • YONKERS, N EW YO R K 1 0 7 1 0

Contextual Info: O ^ iy M D M V 27C040 4M 512K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinout -3 2 -L e a d CERDIP ■ High-Performance — 150 ns Maximum Access Time — VCC = 5V ±10% ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as

TC59S6432bft

Contextual Info: TOSHIBA TENTATIVE TC59S6432BFT/BFTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits.

Contextual Info: “HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques