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Abstract: No abstract text available
Text: “HYUNDAI Y51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The Y51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques
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HY51V16164B
16-bit
Y51V16164B
16-bit.
42/42pin
4b75DÃ
1AD59-10-MAY95
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
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1Mx16,
16-bit
1Mx16
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