JESD97
Abstract: NAND04G-B2D TSOP48 outline
Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B4D
16-Gbit
2112-byte
TSOP48
JESD97
NAND04G-B2D
TSOP48 outline
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ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
ULGA52
NAND08GW3B2C
ONFI nand flash
NAND04GW3B2DN6
NAND08G-B2C
NAND08GR3B4C
NAND08GW3B4C
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LGA-52
Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage
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NAND04G-B2D,
NAND08G-BxC
byte/1056
LGA-52
LGA52
NAND LGA52
NAND08GW3B2C
NAND04GW3B2DN6
NAND08GW3B4C
NAND04GW4B2D
NAND08GR
NAND08GW
lga52 footprint
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AN2664
Abstract: NAND01G-B2B nand flash ONFI 3.0 slc nand nand ONFI 3.0 AN266 NAND02G-B2C NAND02G-B2D NAND04G-B2D NAND flash memory
Text: AN2664 Application note How to migrate from cache program to multiplane page program single level cell NAND Flash memories Introduction The purpose of this application note is to give guidelines for the migration from cache program to multiplane page program single level cell SLC NAND Flash memory devices. In
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AN2664
AN2664
NAND01G-B2B
nand flash ONFI 3.0
slc nand
nand ONFI 3.0
AN266
NAND02G-B2C
NAND02G-B2D
NAND04G-B2D
NAND flash memory
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Untitled
Abstract: No abstract text available
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
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LGA52
Abstract: LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52
Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage
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NAND04G-B2D,
NAND08G-BxC
byte/1056
TSOP48
LGA52
LGA-52
NAND04GW3B2D
nand flash ONFI 3.0
NAND08GW3B2C
NAND04GR4B2D
NAND04G-B2D
NAND04GR3B2D
ONFI nand
NAND LGA52
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NAND04GB2D
Abstract: NAND04G-B2D
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
NAND04GB2D
NAND04G-B2D
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NANDA9R3N
Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or
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2x512-,
256/512-Mbit
x16/x32)
TFBGA107
TFBGA137
LFBGA137
TFBGA149
VFBGA160
VFBGA152
TFBGA152
NANDA9R3N
NANDA9R
TFBGA128
NANDA9R4N4
NANDA9R3N1
nanda8r3
M65KG512AM
d2ed
M65KD001AM
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Untitled
Abstract: No abstract text available
Text: NAND16GW3B6D 16-Gbit 4 x 4 Gbits , four Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • ■ High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B6D
16-Gbit
2112-byte
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LGA52
Abstract: NAND LGA52 LGA-52 ONFI 3.0 NAND08GW3B2C NAND04GW3B2dn6
Text: NAND04G-B2D, NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D,
NAND08G-BxC
2112-byte/1056-word
LGA52
NAND LGA52
LGA-52
ONFI 3.0
NAND08GW3B2C
NAND04GW3B2dn6
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nand ONFI 3.0
Abstract: NAND04GW3B2DN NAND08GW3B2C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
nand ONFI 3.0
NAND04GW3B2DN
NAND08GW3B2C
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