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Catalog Datasheet	MFG & Type	Document Tags	PDF
AN1019 Abstract: AN928 M48T35 M48T58 M48T59 AI02493 Text: AN1019 APPLICATION NOTE Second Source for “SNAPHAT” by Using a Dual Footprint By integrating a battery and power switching circuitry in its ZEROPOWER memory devices, STMicroelectronics was the first to develop non-volatile CMOS Static RAM technology. This is conventional, high	Original	AN1019 AN1019 AN928 M48T35 M48T58 M48T59 AI02493	PDF
Ablestik 84-1 lmis Abstract: XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis Text: QRSR9401 QUALIFICATION REPORT ZEROPOWER and TIMEKEEPER SRAM Surface Mounted SNAPHAT Package This document was previously known as QR103. Its purpose is to present the summary of the reliability tests performed to qualify the SNAPHAT housing used for ZEROPOWER and TIMEKEEPER devices	Original	QRSR9401 QR103. Ablestik 84-1 lmis XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis	PDF
timekeeper Abstract: AN1012 AN968 M48T59 vmebus timekeeper M48T02 M48T18 M48T559 M48T58 application note AN1012 Text: AN968 APPLICATION NOTE VMEbus TIMEKEEPER Requirements Surface-mount TIMEKEEPER devices, from STMicroelectronics, are designed explicitly for inclusion on CPU boards. A typical arrangement is shown in Figure 1. Figure 1. CPU module with a TIMEKEEPER Device	Original	AN968 AI02489 AN968 timekeeper AN1012 M48T59 vmebus timekeeper M48T02 M48T18 M48T559 M48T58 application note AN1012	PDF
a7 surface mount diode Abstract: Zeropower AN1019 AN928 M48T35 M48T58 M48T59 Text: AN1019 APPLICATION NOTE Second Source for “SNAPHAT” by Using a Dual Footprint By integrating a battery and power switching circuitry in its ZEROPOWER memory devices, STMicroelectronics was the first to develop non-volatile CMOS Static RAM technology. This is conventional, high	Original	AN1019 a7 surface mount diode Zeropower AN1019 AN928 M48T35 M48T58 M48T59	PDF
battery trace code Abstract: AI02493 AN928 Text: AN928 APPLICATION NOTE SNAPHAT Assembly and Process Control The SNAPHAT assembly process is fully automated so as to produce a highly reliable product consistently in volume. This automated equipment takes advantage of microcomputer controlled robotics to obtain the	Original	AN928 battery trace code AI02493 AN928	PDF
Plastic Valox 420 SEO Abstract: Ablestik 84-1 lmis Text: QRSR9401 QUALIFICATION REPORT ZEROPOWER and TIMEKEEPER SRAM Surface Mounted SNAPHAT Package This document was previously known as QR103 . Its purpose is to present the summary of the reliability tests performed to qualify the SNAPHAT housing used for ZEROPOWER and TIMEKEEPER devices	Original	QRSR9401 QR103 Plastic Valox 420 SEO Ablestik 84-1 lmis	PDF
K6X8008T2B-UF55 Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety	PDF
14270x Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02 Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02	PDF
timekeeper Abstract: M48T5X application note AN1012 AI02493 an101 vmebus timekeeper AN1012 AN968 M48T02 M48T18 Text: AN968 APPLICATION NOTE VMEbus TIMEKEEPER Requirements Surface-mount TIMEKEEPER devices, from STMicroelectronics, are designed explicitly for inclusion on CPU boards. A typical arrangement is shown in Figure 1. Figure 1. CPU module with a TIMEKEEPER Device	Original	AN968 AI02489 AN968 timekeeper M48T5X application note AN1012 AI02493 an101 vmebus timekeeper AN1012 M48T02 M48T18	PDF
BR1632 safety Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012 Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012	PDF
br1632 br1225 Abstract: No abstract text available Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 br1632 br1225	PDF
BR1632 safety Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12 Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12	PDF