Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19125E
AGR19125E
AGR19125EU
AGR19125EF
IS-95/97
co-712-4106)
PB03-069RFPP
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Untitled
Abstract: No abstract text available
Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19125E
Hz--1990
AGR19125EU
AGR19125EF
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equivalent transistor PT 3500
Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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PDF
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AGR19125E
Hz--1990
AGR19125E
AGR19125EU
AGR19125EF
IS-95
DS04-161RFPP
DS04-035RFPP)
equivalent transistor PT 3500
100B100JW500X
AGR19125EF
AGR19125EU
JESD22-C101A
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
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J119 transistor
Abstract: J555
Text: Preliminary Data Sheet November 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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PDF
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AGR19125E
Hz--1990
AGR19125EU
AGR19125EF
DS04-035RFPP
DS01-215RFPP)
J119 transistor
J555
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J555
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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Original
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PDF
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AGR19125E
Hz--1990
AGR19125EU
AGR19125EF
DS01-215RFPP
J555
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100B100JW500X
Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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Original
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PDF
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AGR19125E
Hz--1990
AGR19125E
AGR19125EU
AGR19125EF
IS-95
IS-95)
100B100JW500X
AGR19125EF
AGR19125EU
JESD22-C101A
1961-25
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