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    J555 Search Results

    J555 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ555-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -60A 22Mohm To-3P Visit Renesas Electronics Corporation
    SF Impression Pixel

    J555 Price and Stock

    Vishay Dale RNC55J5551FSB14

    RES 5.55K OHM 1/8W 1% AXIAL
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    DigiKey RNC55J5551FSB14 Bulk 1,000
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    RS RNC55J5551FSB14 Bulk 1,000
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    Eaton Bussmann EFACA40J555E154BH

    CAP FILM 5.5UF 5% 400VAC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EFACA40J555E154BH Bulk 273
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    Eaton Bussmann EFACA50J555E174DH

    CAP FILM 5.5UF 5% 500VAC RAD
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    DigiKey EFACA50J555E174DH Bulk 126
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    Eaton Bussmann EFACA35J555E114BH

    CAP FILM 5.5UF 5% 350VAC RAD
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    DigiKey EFACA35J555E114BH Bulk 294
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    Sifam Tinsley Precision Instrumentation Ltd TT50-3J5555H000000

    DC SIGNAL ISOLATOR 0-50MV
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    DigiKey TT50-3J5555H000000 1
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    RS TT50-3J5555H000000 Bulk 4 Weeks 1
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    J555 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J555 InterFET Current regulator diode Original PDF
    J555 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    J555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • • • Fast Speed Switching Wide Safe Operating Area Suitable for ElectronicBallast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol


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    PDF FJD5553 J5553 FJD5553

    Untitled

    Abstract: No abstract text available
    Text: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


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    PDF FJD5555 J5555

    J5555

    Abstract: No abstract text available
    Text: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5555 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol


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    PDF FJD5555 J5555 J5555

    Untitled

    Abstract: No abstract text available
    Text: FJD5555 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application 1 • Electronic Ballast • Switch Mode Power Supplies Marking : J5555 1. Base 2. Collector 3. Emitter Ordering Information


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    PDF FJD5555 J5555 FJD5555TM

    J5555

    Abstract: FJD5555 FJD5555TM US Global Sat
    Text: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


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    PDF FJD5555 J5555 J5555 FJD5555 FJD5555TM US Global Sat

    electronic ballast with npn transistor

    Abstract: No abstract text available
    Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol


    Original
    PDF FJD5553 J5553 electronic ballast with npn transistor

    Untitled

    Abstract: No abstract text available
    Text: FJD5553 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application DPAK Marking : J5553 1 • Electronic Ballast • Switch Mode Power Supplies 1. Base 2. Collector 3. Emitter Ordering Information


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    PDF FJD5553 J5553 FJD5553TM

    J555

    Abstract: J554 J553 J556 diode j555 DIODE DATABOOK J557 nj16 current regulator diode j555 diode
    Text: Databook.fxp 1/19/99 12:10 PM Page C-6 C-6 01/99 J553, J554, J555, J556, J557 Current Regulator Diode Absolute maximum ratings at TA = 25¡C. ¥ Current Regulation ¥ Current Limiting ¥ Biasing Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation


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    j555

    Abstract: marking A1 TRANSISTOR FJD5553 FJD5553TM J5553 electronic ballast with npn transistor
    Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol


    Original
    PDF FJD5553 J5553 FJD5553 j555 marking A1 TRANSISTOR FJD5553TM J5553 electronic ballast with npn transistor

    J5555

    Abstract: J555 FJD5555 FJD5555TM
    Text: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol


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    PDF FJD5555 J5555 FJD5555 J5555 J555 FJD5555TM

    32 inch TV samsung lcd Schematic

    Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A


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    PDF 965PM BA41-0071 BA41-00717A BA41-00718A TP18631 TP18634 TP18650 TP18635 TP18636 32 inch TV samsung lcd Schematic U574 27b1 diode AP4435 22B2 DIODE 58c3 SLB9635TT1.2

    Y splitter rj45

    Abstract: CANopen RJ45 usb to rj45 extenders rj45 10pin molex 50394-8100 crimping RJ45 AMP stegmann MC58120 MC58220 Cable-RJ45-02-R
    Text: Prodigy /CME PCI User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


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    Untitled

    Abstract: No abstract text available
    Text: 1234  6BC9D6DC 1 !"#$%#5& %##'9EF912349D9E6DC 56789ABCCD9A68679AC6CA986D97CC6 E9 8CC 1DFA69 9*F6+C 1 !"#$%#5& 56789ABCCD9A68679AC6CA986D97CC6


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    PDF 56789ABCCD9EF 56789ABCCD9A DC9999999 C9567809 /E/09 BCA96 99FCA 76CA91

    455a5

    Abstract: No abstract text available
    Text: 1234  689A9A9CC96 BC9D6DC 1!"#$%&'5 &'' 986789ABCCD9A68679AC6CA986D97CC6 E9A8CC 1DFA69*9+F6,C 1!"#$%&'5( 56789ABCCD9A68679AC6CA986D97CC6


    Original
    PDF 56789ABCCD9EF 986789ABCCD9A 56789ABCCD9A 56789ABCCD9123496 99/E/09 ABBCDE45DF 76CA9 86A9E 918CC C9FACD96 455a5

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    marking code RAD SMD Transistor npn

    Abstract: JS55
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


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    PDF 2N5551HR 2N5551HR MIL-PRF19500 DocID16935 marking code RAD SMD Transistor npn JS55

    Untitled

    Abstract: No abstract text available
    Text: D6 9 -9 7 J553, J554, J555, J556, J557 CURRENT REGULATOR DIODE • CURRENT REGULATION • CURRENT LIMITING • BIASING Absolute maximum ratings at TA = 25'C. Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation 50 V 50 mA


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    J555

    Abstract: J553 J556
    Text: SILICONIX INC là E D • C X 'S ilico ix ilic o n r . JLM 8254735 001,310b =1 ■ ' J553 SERIES incorporated ii Current Regulator Diodes The J553 Series Is a low cost family of current regulators designed for demanding applications In J553 J554 J555 J556


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    PDF 100flC J555 J553 J556

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112T is a silicon monolithic integrated circuit designed as cellular/cordless telephone receiver stage. 1st frequency down-converter for


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    PDF uPC8112T PC8112T uPC2757T uPC2758T 20ount: C10535E) P10764E

    sony ccd

    Abstract: sony exview camera SONY icx259al ccd sony exview HAD sony ccd image sensor transistor marking lv4 ccd sony EXview ICX259 led strobe light circuit diagram CM500S
    Text: SONY ICX259AL Diagonal 6mm Type 1/3 CCD Image Sensor for CCIR B/W Video Cameras Description The ICX259AL is an interline CCD solid-state image sensor suitable for CCIR B/W video cameras with a diagonal 6mm (Type 1/3) system. Compared with the current product


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    PDF ICX259AL ICX259AL ICX059CL, 945nm) sony ccd sony exview camera SONY icx259al ccd sony exview HAD sony ccd image sensor transistor marking lv4 ccd sony EXview ICX259 led strobe light circuit diagram CM500S

    la 76805 volt on pin

    Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
    Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4


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    PDF MCS-4/40â MCS-48â MCS-80/85â -883B la 76805 volt on pin intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall

    1944-01M

    Abstract: 1944-02M 1944-03M 1944-04M MIL-C-15305
    Text: Series 1944 & 1945 Molded Unshielded RF Coils • 1944-01M 1944-02M 1944-03M 1944-04M 1944-05M 1944-06M 1944-07M 1944-08M 1944-09M 1944-10M 1944-11M 1944-12M 1944-13M 1944-14M 1944-15K 1944-16K 1944-17K 1945-01K 1945-02K 1945-03K 1945-04K 1945-05K 1945-06K


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    PDF MIL-C-15305 MS21389-01 MS21389-17, MS21390-01 MS21390-39, 500VDC D737T70 1945-25J 1945-26J 1945-27J 1944-01M 1944-02M 1944-03M 1944-04M

    Untitled

    Abstract: No abstract text available
    Text: ja r LOG AA DRAWING MADE IN THIRD A N G LE PROJECTION TH IS DRAWING IS UNPUBLISHED . | R E LEA SE D FOR PUBLICATION REVISIONS .'•19 p Copyright .19 ■ _ by A M P Incorporated , Harrtsburg . P a . A l l international rights A M P PRODUCTS MAY BE CDVCREO BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING.


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    PDF ECO-07-025549 ECO-08-031715 12MAY09 1710S 28AW-G

    Untitled

    Abstract: No abstract text available
    Text: CO M PAN Y OF MODEL LPTJ3-2 Toroidal Inductor Surface Mount High Current Bifilar Wincing Cata 5 a 5 3 a 7 a 4. a 3 a 2 9 ia PA R A LLEL CONNECTED McaeiNu.'ncer nauctance atODC uH -.2 ^ •5 3 -2 -7 .2 •_3TJ3-2 - 1. - $ f 1 ti II II II II 1 _^ -3 -7 - 'J*T J3-2- .5


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    PDF TJ3-2-330