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    AD 161 TRANSISTOR Search Results

    AD 161 TRANSISTOR Result Highlights (5)

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    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    AD 161 TRANSISTOR Datasheets Context Search

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    fmr461

    Abstract: No abstract text available
    Text: REJ09B0019-0091Z R8C/10 Group 16 Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / R8C /Tiny SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.91


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    REJ09B0019-0091Z R8C/10 16-BIT fmr461 PDF

    ad 161 transistor

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    16N170 16N170 O-268 O-247 ad 161 transistor PDF

    752 J 1600 V CAPACITOR

    Abstract: 16N170 BiMOSFET
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    16N170 O-268 O-247 752 J 1600 V CAPACITOR 16N170 BiMOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    42N170 O-247 PDF

    42N170

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    42N170 42N170 O-268 O-247 PDF

    16N170

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    16N170A 16N170A O-268 O-247 16N170 PDF

    16N170A

    Abstract: diode 22 161 smd
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    16N170A 16N170A diode 22 161 smd PDF

    capacitor 0,1 mF 50V

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
    Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization


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    P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF capacitor 0,1 mF 50V 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram PDF

    mdd 1051

    Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
    Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY


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    1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614 PDF

    LM 3041

    Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
    Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.


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    2N326 5961-0021-s) LM 3041 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076 PDF

    MUNICH256 - PEB 20256

    Abstract: 20256 ram munich256 hdlc PEF 20256 DD25 MUNICH256 NC20 NC22 NC24 PEF 20256 E
    Text: Data Sheet, DS2, April 2001 MUNICH256 Multichannel Network Interface Controller for HDLC/PPP PEB 20256 E Version 2.1 Datacom N e v e r s t o p t h i n k i n g . Edition 04.2001 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


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    MUNICH256 D-81541 MUNICH256 - PEB 20256 20256 ram munich256 hdlc PEF 20256 DD25 MUNICH256 NC20 NC22 NC24 PEF 20256 E PDF

    2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization


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    P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and


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    P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF PDF

    G200

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization


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    P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF G200 PDF

    AD162

    Abstract: AD161 ad 162 AD 161 valvo transistoren valvo AD-161 germanium transistoren ScansUX7 ad161ad
    Text: AD 162 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, mit AI 161 als komplementäres Paar Mechanische Daten: GehKuse: Metal1 9 A 2 nach DIN 41875 Der Kollektor ist mit dem Metal1gehäuse 1e itend verbunden.


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    PDF

    AD161

    Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
    Text: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit


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    max-19 AD161 ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7 PDF

    transistor buz 36

    Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
    Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values


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    O-220 C67078-S1330-A3 SIL02831 SIL02834 transistor buz 36 transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 transistor buz 90 BUZ 140 L PDF

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


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    AT-31625 OT-223 AT-31625 5965-5911E FZH 161 FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZETEX ZXT12N20DX SuperS0T4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=20V; Rsat = 40m il; lc= 3.5A DESCRIPTION T his n e w 4th g e n e ra tio n u ltra lo w sa tu ra tio n tra n s is to r u tilise s th e Z ete x m a trix s tru c tu re c o m b in e d w ith ad va nce d a sse m b ly te c h n iq u e s to give


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    ZXT12N20DX PDF

    UFN150

    Abstract: UFN152
    Text: UFN150 UFN151 UFN152 UFN153 POWER MOSFET TRANSISTORS 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


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    UFN150 UFN151 UFN152 UFN153 UFN151 PDF

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


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    O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel PDF

    2222A

    Abstract: No abstract text available
    Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.


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    AT-31625 OT-223 AT-31625 1997H 5965-5911E 2222A PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.


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    BFS17P 62702-F940 OT-23 PDF

    MRF947RT3

    Abstract: z149 MRF947AT1
    Text: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, H igh-Frequency Transistors D esigned for use in high gain, lo w noise s m a ll-s ig n a l am plifiers. T his series fea tu res e xce lle n t b ro ad ban d linearity and is offere d in a v a rie ty o f packages.


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    MMBR941LT1/D MMBR941 MRF941 MRF947 F9411 18A-05 MRF9411LT1, MRF9411BLT1, MRF947RT3 z149 MRF947AT1 PDF