fmr461
Abstract: No abstract text available
Text: REJ09B0019-0091Z R8C/10 Group 16 Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / R8C /Tiny SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.91
|
Original
|
REJ09B0019-0091Z
R8C/10
16-BIT
fmr461
|
PDF
|
ad 161 transistor
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
16N170
16N170
O-268
O-247
ad 161 transistor
|
PDF
|
752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
|
Original
|
16N170
O-268
O-247
752 J 1600 V CAPACITOR
16N170
BiMOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
|
Original
|
42N170
O-247
|
PDF
|
42N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
42N170
42N170
O-268
O-247
|
PDF
|
16N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
16N170A
16N170A
O-268
O-247
16N170
|
PDF
|
16N170A
Abstract: diode 22 161 smd
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
|
Original
|
16N170A
16N170A
diode 22 161 smd
|
PDF
|
capacitor 0,1 mF 50V
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization
|
Original
|
P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
capacitor 0,1 mF 50V
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2000 watts power amplifier circuit diagram
|
PDF
|
mdd 1051
Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY
|
Original
|
1950W9B
1950W9A
GBfMi14NIUM,
UG-491AW
91-6C
S-1950W9B
Force-11
s9614163)
mdd 1051
circuit k 3683
916c
Transistors marking WZ
ke marking transistor
transistor xl 3001
S9614
|
PDF
|
LM 3041
Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.
|
Original
|
2N326
5961-0021-s)
LM 3041
2N325
2N326
TRANSISTOR C 2026
c 2026 y transistor
MC 340 transistor
c 3076
|
PDF
|
MUNICH256 - PEB 20256
Abstract: 20256 ram munich256 hdlc PEF 20256 DD25 MUNICH256 NC20 NC22 NC24 PEF 20256 E
Text: Data Sheet, DS2, April 2001 MUNICH256 Multichannel Network Interface Controller for HDLC/PPP PEB 20256 E Version 2.1 Datacom N e v e r s t o p t h i n k i n g . Edition 04.2001 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
|
Original
|
MUNICH256
D-81541
MUNICH256 - PEB 20256
20256 ram
munich256 hdlc
PEF 20256
DD25
MUNICH256
NC20
NC22
NC24
PEF 20256 E
|
PDF
|
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization
|
Original
|
P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and
|
Original
|
P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
|
PDF
|
G200
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization
|
Original
|
P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
G200
|
PDF
|
|
AD162
Abstract: AD161 ad 162 AD 161 valvo transistoren valvo AD-161 germanium transistoren ScansUX7 ad161ad
Text: AD 162 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, mit AI 161 als komplementäres Paar Mechanische Daten: GehKuse: Metal1 9 A 2 nach DIN 41875 Der Kollektor ist mit dem Metal1gehäuse 1e itend verbunden.
|
OCR Scan
|
|
PDF
|
AD161
Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
Text: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit
|
OCR Scan
|
max-19
AD161
ad 161
AD162
Valvo Aa
valvo transistoren
valvo
ad 162
AD-161
lastwiderstand-zulassig
ScansUX7
|
PDF
|
transistor buz 36
Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values
|
OCR Scan
|
O-220
C67078-S1330-A3
SIL02831
SIL02834
transistor buz 36
transistor buz 19
BUZ11
transistor buz 10
al p80 transistor
transistor buz 11
transistor buz 90
BUZ 140 L
|
PDF
|
FZH 161
Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency
|
OCR Scan
|
AT-31625
OT-223
AT-31625
5965-5911E
FZH 161
FZH 111
FZH 181
transistor I 17-13 0773
CBC 184 transistor
FZH 175
S3230
FZH 165
FZH 165 b
fzh 171
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZETEX ZXT12N20DX SuperS0T4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=20V; Rsat = 40m il; lc= 3.5A DESCRIPTION T his n e w 4th g e n e ra tio n u ltra lo w sa tu ra tio n tra n s is to r u tilise s th e Z ete x m a trix s tru c tu re c o m b in e d w ith ad va nce d a sse m b ly te c h n iq u e s to give
|
OCR Scan
|
ZXT12N20DX
|
PDF
|
UFN150
Abstract: UFN152
Text: UFN150 UFN151 UFN152 UFN153 POWER MOSFET TRANSISTORS 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
|
OCR Scan
|
UFN150
UFN151
UFN152
UFN153
UFN151
|
PDF
|
30n50 mosfet
Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600
|
OCR Scan
|
O-263
O-263AA
O-247
IXGA10N60A
IXGA24N60A
IXGH32N60B
IXGH50N60AS
IXGA10N60U1
30n50 mosfet
DSE119-06AS
VM0400-02F
MCC SMD DIODE
300-06DA
smd43
35-06AS
500-06DA
250-12DA
mosfet p channel
|
PDF
|
2222A
Abstract: No abstract text available
Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.
|
OCR Scan
|
AT-31625
OT-223
AT-31625
1997H
5965-5911E
2222A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.
|
OCR Scan
|
BFS17P
62702-F940
OT-23
|
PDF
|
MRF947RT3
Abstract: z149 MRF947AT1
Text: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, H igh-Frequency Transistors D esigned for use in high gain, lo w noise s m a ll-s ig n a l am plifiers. T his series fea tu res e xce lle n t b ro ad ban d linearity and is offere d in a v a rie ty o f packages.
|
OCR Scan
|
MMBR941LT1/D
MMBR941
MRF941
MRF947
F9411
18A-05
MRF9411LT1,
MRF9411BLT1,
MRF947RT3
z149
MRF947AT1
|
PDF
|