16N170A Search Results

16N170A Price and Stock

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IXYS Corporation IXGT16N170A IGBT NPT 1700V 16A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT16N170A	Tube	556		1	1 $16.47 10 $16.47 100 $10.782 1000 $16.47 10000 $16.47	Buy Now
Mouser Electronics	IXGT16N170A		3,120			1 $18.1 10 $17.73 100 $11.61 1000 $10.34 10000 $10.34	Buy Now
TTI	IXGT16N170A	Tube	300		30	1 - 10 - 100 $14.06 1000 $14.06 10000 $14.06	Buy Now
TME	IXGT16N170A				1	1 $14.99 10 $11.91 100 $10.67 1000 $10.67 10000 $10.67	Get Quote
IXYS Corporation IXGH16N170A IGBT 1700V 16A 190W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH16N170A	Tube	254		1	1 $11.04 10 $11.04 100 $7.01633 1000 $11.04 10000 $11.04	Buy Now
Mouser Electronics	IXGH16N170A		223			1 $11.46 10 $9.85 100 $6.68 1000 $6.26 10000 $6.26	Buy Now
TTI	IXGH16N170A	Tube			300	1 - 10 - 100 - 1000 $8.52 10000 $8.52	Buy Now
TME	IXGH16N170A				1	1 $11.69 10 $9.23 100 $8.29 1000 $8.29 10000 $8.29	Get Quote
New Advantage Corporation	IXGH16N170A		295		1	1 - 10 - 100 $18.52 1000 $17.28 10000 $17.28	Buy Now
IXYS Corporation IXBH16N170A IGBT 1700V 16A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH16N170A	Tube	170		1	1 $13.5 10 $13.5 100 $8.70433 1000 $13.5 10000 $13.5	Buy Now
Mouser Electronics	IXBH16N170A		815			1 $13.68 10 $12.48 100 $11.08 1000 $10.42 10000 $10.42	Buy Now
TTI	IXBH16N170A	Tube	600		10	1 - 10 $12.36 100 $12.36 1000 $12.36 10000 $12.36	Buy Now
TME	IXBH16N170A				1	1 $16.21 10 $12.9 100 $12.02 1000 $12.02 10000 $12.02	Get Quote
New Advantage Corporation	IXBH16N170A		200		1	1 - 10 - 100 $23.82 1000 $22.23 10000 $22.23	Buy Now
IXYS Corporation IXBA16N170AHV REVERSE CONDUCTING IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBA16N170AHV	Tube	8		1	1 $25.77 10 $25.77 100 $17.9802 1000 $17.9802 10000 $17.9802	Buy Now
Mouser Electronics	IXBA16N170AHV					1 - 10 - 100 - 1000 $21.24 10000 $21.24	Get Quote
TTI	IXBA16N170AHV	Tube			300	1 - 10 - 100 - 1000 $17.98 10000 $17.98	Buy Now
TME	IXBA16N170AHV		8		1	1 $32.19 10 $25.58 100 $23.15 1000 $23.15 10000 $23.15	Buy Now
IXYS Corporation IXBT16N170A IGBT 1700V 16A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBT16N170A	Tube			300	1 - 10 - 100 - 1000 $11.84173 10000 $11.84173	Buy Now
Mouser Electronics	IXBT16N170A		300			1 $20.3 10 $20.29 100 $16.27 1000 $11.84 10000 $11.84	Buy Now
TTI	IXBT16N170A	Tube			300	1 - 10 - 100 - 1000 $12.32 10000 $12.32	Buy Now
TME	IXBT16N170A		9		1	1 $17.2 10 $13.56 100 $12.68 1000 $12.68 10000 $12.68	Buy Now
New Advantage Corporation	IXBT16N170A		50		1	1 - 10 - 100 $27.05 1000 $27.05 10000 $27.05	Buy Now

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16N170A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	16N170A 728B1
smd diode 819 Abstract: 16N170A mos 1200v to-247 Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20	Original	PDF	16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247
16N170A Abstract: TO-247 weight IXGH16N170A Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	16N170A 728B1 TO-247 weight IXGH16N170A
16N170AH1 Abstract: 16N170A robot control 16N170 Text: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700	Original	PDF	16N170A 16N170AH1 O-247 405B2 16N170A robot control 16N170
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170AH1 16N170AH1 16N170A IXGT16N170A IXGH16N170AH1
16N170A Abstract: diode 22 161 smd Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	16N170A 16N170A diode 22 161 smd
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous	Original	PDF	16N170A 16N170A O-268 O-247
A1540 Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1 Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170AH1 ISOPLUS247 E153432 minute00 405B2 A1540 rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1
Untitled Abstract: No abstract text available Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170AH1 ISOPLUS247 E153432 405B2
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170AH1 W1700
16N170 Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170A O-268 O-247 16N170
Untitled Abstract: No abstract text available Text: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	PDF	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 338B2
IXGH16N170A Abstract: IXGT16N170A Text: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	PDF	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 16N170A DH10A-1800PA IXGH16N170A IXGT16N170A
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

16N170A Search Results

16N170A Price and Stock

IXYS Corporation IXGT16N170A

IXYS Corporation IXGH16N170A

IXYS Corporation IXBH16N170A

IXYS Corporation IXBA16N170AHV

IXYS Corporation IXBT16N170A

16N170A Datasheets Context Search

Untitled

smd diode 819

16N170A

16N170AH1

16N170AH1

16N170A

Untitled

A1540

Untitled

Untitled

16N170

Untitled

IXGH16N170A

7N60B equivalent

50N60