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    ACT 134 TRANSISTOR Search Results

    ACT 134 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ACT 134 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Actel a1280

    Abstract: VKS FPGA CQFP 172 actel 1020 A1020 smd TRANSISTOR 5962-9215601MXA 5962-9096503MTC equivalent transistor A1020 y 7 b Actel A1020 ACTEL A1010 actel 1020 datasheet
    Text: Military Field Programmable Gate Arrays Features ACT 3 Features • Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Device Sizes from 1200 to 10,000 gates up to 25,000 PLD equivalent gates • Up to 4, Fast, Low-Skew Clock Networks


    Original     		PDF 20-pin Actel a1280 VKS FPGA CQFP 172 actel 1020 A1020 smd TRANSISTOR 5962-9215601MXA 5962-9096503MTC equivalent transistor A1020 y 7 b Actel A1020 ACTEL A1010 actel 1020 datasheet

    Untitled

    Abstract: No abstract text available
    Text: Revision 8 ACT 2 Family FPGAs Features • Up to 8,000 Gate Array Gates 20,000 PLD equivalent gates • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages • Design Library with over 500 Macro Functions • Single-Module Sequence Functions


    Original     		PDF 20-Pin 16-Bit

    A1280A SDO

    Abstract: actel a1240 A1225 new a1225a
    Text: Revision 8 ACT 2 Family FPGAs Features • Up to 8,000 Gate Array Gates 20,000 PLD equivalent gates • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages • Design Library with over 500 Macro Functions • Single-Module Sequence Functions


    Original     		PDF 20-Pin 16-Bitaerospace, A1280A SDO actel a1240 A1225 new a1225a

    Untitled

    Abstract: No abstract text available
    Text: BACK Accelerator Series FPGAs – ACT 3 PCI-Compliant Family Features • Up to 10,000 Gate Array Equivalent Gates. • Up to 250 MHz On-Chip Performance. • 9.0 ns Clock-to-Output. • Up to 1,153 Dedicated Flip-Flops. • Up to 228 User-Programmable I/O Pins.


    Original     		PDF 20-Pin 16-Bit)

    ACT 3 Accelerator

    Abstract: ACT 3 accelerator FPGAs Actel Accelerator fpga datasheet DLM8 A1425A-3
    Text: Accelerator Series FPGAs – ACT 3 PCI-Compliant Family Features • Up to 10,000 Gate Array Equivalent Gates. • Up to 250 MHz On-Chip Performance. • 9.0 ns Clock-to-Output. • Up to 1,153 Dedicated Flip-Flops. • Up to 228 User-Programmable I/O Pins.


    Original     		PDF A1460BP A14100BP ACT 3 Accelerator ACT 3 accelerator FPGAs Actel Accelerator fpga datasheet DLM8 A1425A-3

    BUY89

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.


    OCR Scan     		PDF BUY89 bfaS3131 BUY89

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier


    OCR Scan     		PDF BF967 b53T31 0Q1533E T-31-

    1S274

    Abstract: RZ3135B50W
    Text: N AUER PHILIPS/DISCRETE ^ 53=131 0015273 ObE D c RZ3135B50W T - 3 5 - »3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range o f 3,1 to 3,5 GHz.


    OCR Scan     		PDF RZ3135B50W LbS3T31 RZ3135B50W 1S274

    Untitled

    Abstract: No abstract text available
    Text: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.


    OCR Scan     		PDF BD950; BD954; O-220 BD949; BD950 BD950 BD952. BD054

    BU505F

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BU505F; BU505DF Silicon diffused power transistors DESCRIPTION High-voltage,high-speed, glass-passivated NPN power transistor in a SOT 186 package with electrically isolated mounting base. The BU505DF has an integrated


    OCR Scan     		PDF BU505DF BU505F; BU505DF MGB882 BU505F

    8D140

    Abstract: BDXXX 8d136 BD136-BD138-BD140 BD140 BD136 transistors bd136 transistor sot t06 BD138 BD139
    Text: BD136 BD138 BD140 SILICO N PLANAR EPITAXIAL POW ER T R A N SIST O R S General purpose p-n-p transistors in SO T-32 plastic envelop«, recommended for driver stages in hi-fi amplifiers and television circuits. The BD135, BD137 and BD139 are complementary to the BD136, BD138 and BD140 respectively.


    OCR Scan     		PDF BD136 BD138 BD140 OT-32 BD135, BD137 BD139are BD136, BD138 BD140 8D140 BDXXX 8d136 BD136-BD138-BD140 BD136 transistors bd136 transistor sot t06 BD139

    Transistors 13005 D

    Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
    Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use


    OCR Scan     		PDF tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K

    dg432

    Abstract: No abstract text available
    Text: BDT60;60A BDT60B;60C SbE T> PHILIPS INTERNATIONAL • 711002b 00432G4 bTl HIPHIN T- 33- ? SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.


    OCR Scan     		PDF BDT60 BDT60B 711002b 00432G4 BDT61, BDT61A, BDT61B BDT61C. O-220. dg432

    bd643f

    Abstract: No abstract text available
    Text: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A


    OCR Scan     		PDF BD643F; BD649F; transistorsinaSOT186 BD644F, BD646F, BD648F, BD650F BD652F. BD643F bd643f

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF bb53R31 0D3Q47S BUK436-1000B bbS3T31

    BUK444-500B

    Abstract: transistor BUK444-500B
    Text: hSE T> PHILIPS INTERNATIONAL m 711062b □0b3t171 MAT W P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK444-500B -SOT186 BUK444-500B transistor BUK444-500B

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


    OCR Scan     		PDF PHP65N06LT, PHB65N06LT T0220AB)

    s1g 28 diode

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP60N06LT, PHB60N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


    OCR Scan     		PDF PHP60N06LT, PHB60N06LT T0220AB) s1g 28 diode

    BDX33D equivalent

    Abstract: BOX33B RCA-BDX33 BDX33c equivalent
    Text: oï G E SOLID STATE 38 75081 G E SOLID-STATE Darlington Power Translators 0 1E ~ d^3ö7S0öi □□vpsflü 3 17280 Ö’ T - 3 3 - 2 L 7 BDX33, BDX33A, BDX33B, BDX33C, BDX33D File Number 693/ r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS


    OCR Scan     		PDF BDX33, BDX33A, BDX33B, BDX33C, BDX33D 10-Ampere O-220AB RCA-BDX33, BDX33D equivalent BOX33B RCA-BDX33 BDX33c equivalent

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP50N06LT, PHB50N06LT SYMBOL • ’T r e n c h ’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


    OCR Scan     		PDF PHP50N06LT, PHB50N06LT T0220AB)

    TA7337

    Abstract: transistor et 454 TRANSISTOR BJ 131 TA7337A 2N6033 2N6033 RCA tektronix 454 2N6032 equivalent 2N6032 TA733
    Text: 2N6032, 2N6033 File Number 462 High-Current, High-Speed High-Power Transistors T E R M I N A L D E S IG N A T IO N S c Silicon N-P-N Types for High-Speed Switching and Linear-Amplifier Applications In Military, Industrial and Commercial Equipment Futur««:


    OCR Scan     		PDF 2N6032, 2N6033 DD17134 2N6033) 2N6032) TQ-204AE RCA-2N6032 2N6033* 2N6033 2N6032; TA7337 transistor et 454 TRANSISTOR BJ 131 TA7337A 2N6033 RCA tektronix 454 2N6032 equivalent 2N6032 TA733

    BUK542

    Abstract: BUK542-60A BUK542-60B
    Text: N AMER PHILIPS/DISCRETE 25E D • b h S 3 cì31 0 0 S Q S 7 G T ■ Po we rM OS transistor Logic Level FET BUK542-60A BUK542-60B r-3 < ? -o 9 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF 00EQ57D BUK542-60A BUK542-60B BUK542 -ID/100 BUK542-60A BUK542-60B

    12-INPUT

    Abstract: No abstract text available
    Text: TYPES SN54S134, SN74S134 12-INPUT POSITIVE-NAND GATES WITH 3-STATE OUTPUTS R E V IS E D D E C E M B E R 1983 Package Options Include Both Plastic and Ceramic Chip Carriers in Addition to Plastic and Ceramic DIPs S N 5 4 S 1 3 4 . . . J OR W PACKAGE S N 7 4 S 1 3 4 . . . D , J OR N PACKA GE


    OCR Scan     		PDF SN54S134, SN74S134 12-INPUT

    BF970A

    Abstract: No abstract text available
    Text: DEVELOPM ENT DATA • LtS3T3 lToQ 15 33 b This data sheet contains advance Information and =^— =— = -specifications are subject to change without notice._ N AMER PHILIPS/DISCRETE if _ 5 ■ n ~ BF970A □ bE D _


    OCR Scan     		PDF BF970A BF970A