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    Transistors 13005 D

    Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
    Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use


    OCR Scan     		PDF tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K

    transistor Ip

    Abstract: BUK426-200A BUK426-200B
    Text: N AMER P H I L I P S / D I S C R E T E 2SE bbSBTBl D 0ÜSÜ5S0 5 B U K 426-200A B U K 426-200B PowerMOS transistor T -3 7 -il QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK426-200A BUK426-200B BUK426 -200A -200B transistor Ip BUK426-200B

    Philips FA 145

    Abstract: BUK426-200A BUK426-200B
    Text: N AMER PHI LIPS/ DI SC RE TE 2SE D • bbSBTBl 0ÜSÜ5S0 5 ■ PowerMOS transistor BUK426-200A BUK426-200B T-37-1/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF T-37-1/ BUK426 -200A -200B OT-199; Philips FA 145 BUK426-200A BUK426-200B