60IDS
Abstract: x-band mmic
Text: FMA246 Preliminary Datasheet v2.3 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current
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FMA246
FMA246
22A114.
MIL-STD-1686
MIL-HDBK-263.
60IDS
x-band mmic
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x-band mmic
Abstract: FMA246 60IDSS 60IDS
Text: FMA246 Preliminary Datasheet v3.0 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current
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FMA246
FMA246
x-band mmic
60IDSS
60IDS
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Untitled
Abstract: No abstract text available
Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD1500
FPD15001W
FPD1500
mx1500Î
29dBm
12GHz
41dBm
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X-band Gan Hemt
Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
19dBm
FMA246-000
FMA246-000SQ
FMA246-000S3
DS090309
X-band Gan Hemt
A246
MIL-HDBK-263
x-band mmic
MIL-STD-1686
X-band GaAs pHEMT MMIC Chip
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Untitled
Abstract: No abstract text available
Text: FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • • Preliminary Datasheet v2.2 LAYOUT: Available as RF Known Good Die 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply
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FMA246
FMA246
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Untitled
Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
FMA246-000SQ
FMA246-000
FMA246-000S3
DS110503
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E8363B
Abstract: E4446A E8257D JESD22-A114 E4446A PSA VA108 RFSW2043D
Text: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2043D
20GHz
20GHz
33mmx1
11mmx0
RFSW2043D
E8363B
E4446A
E8257D
JESD22-A114
E4446A PSA
VA108
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FPD1500
Abstract: FPD1500 SOT89 ablestick 550 MIL-HDBK-263
Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD1500
FPD15001W
FPD1500
25mx1500m
29dBm
12GHz
41dBm
FPD1500 SOT89
ablestick 550
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2043D
20GHz
20GHz
RFSW2043D
22-A114.
MIL-STD-1686
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E8363
Abstract: RFSW2043DS
Text: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2043D
20GHz
RFSW2043D
33mmx1
11mmx0
E8363
RFSW2043DS
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RFSW2043D
Abstract: No abstract text available
Text: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2043D
20GHz
RFSW2043D
22-A114.
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RFSW2041D
Abstract: No abstract text available
Text: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2041D
25GHz
RFSW2041D
91mmx2
11mmx0
20GHz
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x-Band Hemt Amplifier
Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
FMA246-000
FMA246-000SQ
FMA246-000S3
DS110503
x-Band Hemt Amplifier
x-band mmic
X-band GaAs pHEMT MMIC Chip
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Untitled
Abstract: No abstract text available
Text: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2041D
25GHz
25GHz
91mmx2
11mmx0
RFSW2041D
20GHz
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E8257D
Abstract: ultrasonic probe E4446A E8363B JESD22-A114 bjt microwave 15 GHz RFSW2041D v4438
Text: DRAFT DRAFT RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2041D
25GHz
25GHz
91mmx2
11mmx0
RFSW2041D
20GHz
E8257D
ultrasonic probe
E4446A
E8363B
JESD22-A114
bjt microwave 15 GHz
v4438
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Untitled
Abstract: No abstract text available
Text: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2041D
25GHz
RFSW2041D
91mmx2
11mmx0
20GHz
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FMA3014
Abstract: MIL-HDBK-263
Text: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic
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FMA3014
16GHZ
FMA3014
17dBm
-15dB
-12dB
FMA3014-000
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic
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FMA3014
16GHZ
FMA3014
FMA3014-000
FMA3014-000SQ
FMA3014-000S3
DS110304
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wafer 60g
Abstract: ati 4350* circuit
Text: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic
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FMA3014
16GHZ
FMA3014
17dBm
-15dB
-12dB
22-A114.
wafer 60g
ati 4350* circuit
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30SPA0553
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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30SPA0553
01-Sep-05
MIL-STD-883
30SPA0553
30SPA0557
84-1LMI
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18MPA0567
Abstract: 84-1LMI
Text: 17.0-22.0 GHz GaAs MMIC Power Amplifier 18MPA0567 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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18MPA0567
01-Sep-05
MIL-STD-883
18MPA0567
84-1LMI
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Untitled
Abstract: No abstract text available
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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P1026-BD
23-Feb-07
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
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Untitled
Abstract: No abstract text available
Text: AUG 1 4 Wf H V 25 H V 26 Gì Supertex inc. Preliminary High Voltage, Fault-protected Analog Multiplexer Ordering Information O rder Number / Package Device Configuration 16-pin Plastic Dip 16-pin Side-brazed Dip Single 8-Channel HV2516P HV2516C HV2516WG HV2516X
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16-pin
HV2516P
HV2616P
HV2516C
HV2616C
HV2516WG
HV2616WG
HV2516X
HV2616X
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Untitled
Abstract: No abstract text available
Text: I TEKTRONIX INC/ TRI ÛUINT 2L>E D El flTDbSlö D D 0 0 3 H _ S O TRÖ T ^ ' 2 \S\ BiBtLI G i g a B i t L o g ic 10G004 Quad 2:1 Multiplexer 1.8 GHz/3.6 Gbit/s NRZ Data Rate 10G PicoLogic Family FEATURES • 3.6 Gbit/sec output NRZ data rate
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10G004
050P3
0080P
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