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Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD1500
FPD15001W
FPD1500
mx1500Î
29dBm
12GHz
41dBm
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FPD1500
Abstract: FPD1500 SOT89 ablestick 550 MIL-HDBK-263
Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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Original
|
PDF
|
FPD1500
FPD15001W
FPD1500
25mx1500m
29dBm
12GHz
41dBm
FPD1500 SOT89
ablestick 550
MIL-HDBK-263
|